TYSEMI 2SC3648

SMD Type
Product specification
2SC3648
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
0.7
A
Collector Current (Pulse)
ICP
1.5
A
PC
500
mW
PC *
1.3
W
Tj
150
Tstg
-55 to +150
Collector Power Dissipation
Jumction temperature
Storage temperature Range
2
* Mounted on ceramic board (250 mm x 0.8 mm)
Electrical Characteristics Ta = 25
Max
Unit
Collector Cut-off Current
Parameter
Symbol
ICBO
VCB = 120V , IE = 0
Testconditons
Min
Typ
0.1
uA
Emitter Cut-off Current
IEBO
VEB = 4V , IC = 0
0.1
uA
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10uA , IE = 0
180
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 1mA , RBE =
160
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10uA , IC = 0
6
V
DC Current Gain
hFE
VCE = 5V , IC = 100mA
100
400
Collector-Emitter Saturation Voltage
VCE(sat) IC = 250mA , IB = 25mA
0.2
0.5
V
Base-Emitter Saturation Voltage
VBE(sat) IC = 250mA , IB = 25mA
0.85
1.2
V
Gain-Bandwidth Product
Collector Output Capacitance
fT
Cob
Turn-On Time
ton
Storage Time
tstg
Fall Time
http://www.twtysemi.com
VCE = 10V , IC = 50mA
120
MHz
VCB = 10V , IE = 0 , f = 1MHz
11
pF
See Test Circuit.
900
60
tf
[email protected]
ns
60
4008-318-123
1 of 3
SMD Type
Product specification
2SC3648
Test Circuit
hFE Classification
CD
Marking
Rank
hFE
R
100
S
200
140
T
280
200
400
Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 3
SMD Type
Product specification
2SC3648
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3