TYSEMI 2SC4694

Transistors
IC
SMD Type
Type
SMD
Product specification
2SC4694
Features
Adoption of MBIT process.
High DC current gain.
High VEBO (VEBO
25V).
High reverse hFE (150 typ).
Small ON resistance [Ron=1Ù (IB=5mA)].
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
500
mA
Collector current (pulse)
ICP
800
mA
Base current
IB
100
mA
Collector dissipation
PC
150
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 4
Transistors
Transistors
IC
Transistors
IC
SMD Type
SMD Type
Type
SMD
Product specification
2SC4694
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
IcBO
VCB = 40V , IE = 0
Emitter cutoff current
IEBO
VEB = 20V , IC = 0
DC current Gain
hFE
VCE = 5V , IC = 10mA
fT
VCE = 10V , IC = 10mA
Cob
VCB = 10V , f = 1MHz
Gain bandwidth product
Common base output capacitance
Min
Typ
300
Max
Unit
0.1
ìA
0.1
ìA
1200
250
MHz
3.6
pF
Collector-to-emitter saturation voltage
VCE(sat) IC = 100mA , IB = 2mA
0.12
0.5
V
Base-to-emitter saturation voltage
VBE(sat) IC = 100mA , IB = 2mA
0.85
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
50
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
20
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
25
V
Turn-on time
ton
135
ns
Storage time
tstg
450
ns
tf
100
ns
Fall time
Marking
Marking
WT
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 4
Transistors
Transistors
IC
Transistors
IC
Transistors
IC
SMD Type
SMD Type
Type
SMD
SMD
Type
Product specification
2SC4694
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 4
Transistors
Transistors
IC
Transistors
IC
SMD Type
SMD Type
Type
SMD
Product specification
2SC4694
http://www.twtysemi.com
[email protected]
4008-318-123
4 of 4