Transistors IC SMD Type Type SMD Product specification 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 500 mA Collector current (pulse) ICP 800 mA Base current IB 100 mA Collector dissipation PC 150 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Transistors Transistors IC Transistors IC SMD Type SMD Type Type SMD Product specification 2SC4694 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current IcBO VCB = 40V , IE = 0 Emitter cutoff current IEBO VEB = 20V , IC = 0 DC current Gain hFE VCE = 5V , IC = 10mA fT VCE = 10V , IC = 10mA Cob VCB = 10V , f = 1MHz Gain bandwidth product Common base output capacitance Min Typ 300 Max Unit 0.1 ìA 0.1 ìA 1200 250 MHz 3.6 pF Collector-to-emitter saturation voltage VCE(sat) IC = 100mA , IB = 2mA 0.12 0.5 V Base-to-emitter saturation voltage VBE(sat) IC = 100mA , IB = 2mA 0.85 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 50 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = 20 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 25 V Turn-on time ton 135 ns Storage time tstg 450 ns tf 100 ns Fall time Marking Marking WT http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 Transistors Transistors IC Transistors IC Transistors IC SMD Type SMD Type Type SMD SMD Type Product specification 2SC4694 http://www.twtysemi.com [email protected] 4008-318-123 3 of 4 Transistors Transistors IC Transistors IC SMD Type SMD Type Type SMD Product specification 2SC4694 http://www.twtysemi.com [email protected] 4008-318-123 4 of 4