Product specification 2SB1176 Features TO-252 Low collector-emitter saturation voltage VCE(sat). 6.50 +0.2 5.30-0.2 Satisfactory linearity of forward current transfer ratio hFE. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Large collector current IC. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -130 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V Collector current IC -5 A Peak collector current ICP -10 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-emitter voltage VCEO IC = -10 mA, IB = 0 Collector-emitter cutoff curent ICEO VCE = -100 V,IB = 0 Emitter-base cutoff current IEBO Forward current transfer ratio hFE Min Typ Max -80 V VEB = -5 V, IC = 0 VCE = -2 V, IC = -2 A 90 VCE = -2 V, IC = -0.1 A 45 Unit -10 ìA -50 ìA 260 V Collector-emitter saturation voltage VCE(sat) IC = -4 A, IB = -0.2 A -0.5 V Base-emitter saturation voltage VBE(sat) IC = -4 A, IB = -0.2 A -1.5 V Transition frequency fT Turn-on time ton Storage time tstg Fall time VCE = -10 V, IC = -0.5 A , f = 10 MHz IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A, VCC = -50 V tf 30 MHz 0.13 ìs 0.5 ìs 0.13 ìs hFE Classification Rank Q P hFE 90 180 130 260 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1