Product specification 2SB930 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). +0.15 0.50 -0.15 High forward current transfer ratio hFE which has satisfactory linearity. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Collector current IC -4 A Peak collector current ICP -8 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage Testconditons VCEO IC = -30 mA, IB = 0 Min Typ Max -60 Unit V ICES VCE = -60 V,VBE = 0 -400 ìA ICEO VCE = -30 V,IB = 0 -700 ìA Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 -1 mA Forward current transfer ratio hFE Collector cutoff curent Base to emitter voltage VBE Collector-emitter saturation voltage VCE = -4 V, IC = -1 A 70 VCE = -4 V, IC = -3 A 15 250 VCE = -4 V, IC = -3 A -2 VCE(sat) IC = -4 A, IB = -0.4 A Transition frequency fT Turn-on time ton Storage time tstg Fall time -1.5 VCE = -10 V, IC = -0.5 A , f = 10 MHz IC = -4 A,IB1 = -0.4 A,IB2 = 0.4 A, VCC = -50 V tf V V 20 MHz 0.2 ìs 0.5 ìs 0.2 ìs hFE Classification Rank Q P hFE 70 150 120 250 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1