TYSEMI 2SD1005

Transistors
IC
SMD Type
Product specification
2SD1005
Features
World standard miniature package: SOT-89.
High collector to base voltage: VCBO
100V.
Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse) *
IC
1.5
A
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Total power dissipation
at 25
ambient temperature *
*1. PW
10ìs,duty cycle 50%
*2. When mounted on ceramic substrate of 16cm2 X 0.7mm
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 100V, IE=0
Emitter cutoff current
IEBO
VEB = 5V, IC=0
DC current gain *
hFE
Min
Typ
VCE =2V , IC = 100mA
90
200
VCE =2V , IC = 500mA
25
80
Max
Unit
100
nA
100
nA
400
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
0.15
0.5
V
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB = 50mA
0.9
1.5
V
630
700
mV
Base-emitter voltage *
Gain bandwidth product
Output capacitance
*. PW
VBE
VCE =10V , IC = 10mA
fT
VCE = 5V , IE = -10mA
160
MHz
VCB = 10V , IE = 0 , f = 1.0MHz
12
pF
Cob
600
350ìs,duty cycle 2%
hFE Classification
Marking
BW
BV
BU
hFE
90 180
135 270
200 400
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4008-318-123
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