Transistors IC SMD Type Product specification 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 1 A Collector Current (pulse) * IC 1.5 A Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain * Testconditons Min Typ VCB = 30 V, IE = 0 A VEB = 5.0 V, IC = 0 A hFE VCE = 1.0 V, IC = 100 mA 90 200 VCE = 1.0 V, IC = 1.0A 50 140 Max Unit 100 nA 100 nA 400 Collector saturation voltage * VCE(sat) IC = 1.0 A, IB = 0.1A 0.21 0.4 V Base saturation voltage * VBE(sat) IC = 1.0 A, IB = 0.1A 1 1.2 V 630 700 mV Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW VBE VCE = 6.0 V, IC = 10 mA fT VCE = 6.0 V, IE = -10 mA 130 MHz VCB = 6 V, IE = 0, f = 1.0 MHz 22 pF Cob 350 ìs, duty cycle 600 2% hFE Classification Marking CM CL CK hFE 90 180 135 270 200 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1