Transistors SMD Type NPN Silicon Epitaxia 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (pulse) * IC 1.5 A PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Total power dissipation at 25 ambient temperature * *1. PW 10ìs,duty cycle 50% *2. When mounted on ceramic substrate of 16cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 100V, IE=0 Emitter cutoff current IEBO VEB = 5V, IC=0 DC current gain * hFE Min Typ VCE =2V , IC = 100mA 90 200 VCE =2V , IC = 500mA 25 80 Max Unit 100 nA 100 nA 400 Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA 0.15 0.5 V Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA 0.9 1.5 V 630 700 mV Base-emitter voltage * Gain bandwidth product Output capacitance *. PW VBE VCE =10V , IC = 10mA fT VCE = 5V , IE = -10mA 160 MHz VCB = 10V , IE = 0 , f = 1.0MHz 12 pF Cob 600 350ìs,duty cycle 2% hFE Classification Marking BW BV BU hFE 90 180 135 270 200 400 www.kexin.com.cn 1