TYSEMI 2SD1823

Transistors
IC
SMD Type
Product specification
2SD1823
Features
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
High emitter-base voltage VEBO.
Low noise voltage NV.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
Min
Typ
Max
50
Unit
V
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
40
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
15
V
Collector-base cutoff current
ICBO
VCB = 20 V, IE = 0
Collector-emitter cutoff current
ICEO
VCE = 20 V, IB = 0
Forward current transfer ratio
hFE
VCE = 10 V, IC = 2 mA
Collector-emitter saturation voltage
400
VCE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
ìA
1
ìA
2000
0.05
VCB = 10 V, IE = ?2 mA, f = 200 MHz
0.1
120
0.20
V
MHz
hFE Classification
1Z
Marking
Rank
R
S
T
hFE
400 800
600 1200
1000 2000
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1