Product specification BAV170 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Plastic SMD package 0.4 3 Features Switching time: typ. 0.8 1 s 0.55 Low leakage current: typ. 3 pA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage:max. 75 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage:max. 85 V 0-0.1 +0.1 0.38-0.1 Repetitive peak forward current:max. 500 mA. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Repetitive peak reverse voltage Conditions Min Max Unit VRRM 85 V Continuous reverse voltage VR 75 V Continuous forward current IF Repetitive peak forward current single diode loaded 215 double diode loaded 125 IFRM 500 square wave; Tj = 25 Non-repetitive peak forward current IFSM mA prior to surge s 4 t = 1 ms 1 t=1 mA t=1s 0.5 Ta mb = 25 250 A Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj 150 thermal resistance from junction to tie-point Rth j-t p 360 K/W thermal resistance from junction to ambient Rth j-a 500 K/W http://www.twtysemi.com [email protected] -65 mW +150 4008-318-123 1 of 2 Product specification BAV170 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage Conditions VF 900 IF = 10 mA 1000 IF = 50 mA 1100 IF = 150 mA 1250 VR = 75 V; Tj = 150 Diode capacitance Cd Reverse recovery time trr f = 1 MHz; VR = 0; when switched from IF = 10 mA to IR = 10 mA; RL = 100 Max IF = 1 mA VR = 75 V IR Reverse current Typ 0.003 5 3 80 2 0.8 Unit mV nA pF 3 ìs ;measured at IR = 1 mA; Marking Marking JXp http://www.twtysemi.com [email protected] 4008-318-123 2 of 2