Transistors IC SMD Type Product specification BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 32 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA Total power dissipation Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCW31,BCW32,BCW33 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons Min BCW32 IE = 0; VCB = 32 V 100 nA IE = 0; VCB = 32 V; Tj = 100 10 ìA IEBO IC = 0; VEB = 5 V 100 nA hFE IC = 2 mA; VCE = 5 V VCE(sat) Base to emitter saturation voltage Unit ICBO BCW33 Collector-emitter saturation voltage Max ICBO BCW31 DC current gain Typ VBE(sat) 110 120 200 450 420 800 IC = 10 mA; IB = 0.5 mA 120 IC = 50 mA; IB = 2.5 mA 210 mV IC = 10 mA; IB = 0.5 mA 750 mV IC = 50 mA; IB = 2.5 mA 850 mV Base to emitter voltage VBE IC = 2 mA; VCE = 5 V Collector capacitance CC IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz Noise figure NF IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz 550 250 700 2.5 mV mV pF 100 MHz 10 dB hFE Classification TYPE BCW31 BCW32 BCW33 Marking D1 D2 D3 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2