TYSEMI BC850C

Transistors
IC
SMD Type
Product specification
BC849, BC850
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
Low voltage (max. 45 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
Low current (max. 100 mA)
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
collector-base voltage
VCBO
Rating
Unit
30
V
50
V
30
V
collector-emitter voltage
VCEO
45
V
emitter-base voltage
VEBO
5
V
collector current (DC)
IC
100
mA
peak collector current
ICM
200
mA
peak base current
IBM
200
mA
Ptot
250
mW
storage temperature
Tstg
-65 to 150
junction temperature
Tj
150
Tamb
-65 to 150
Rth(j-a)
500
total power dissipation Tamb
25
*
operating ambient temperature
thermal resistance from junction to ambient *
K/W
* Transistor mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
IC
SMD Type
Product specification
BC849, BC850
Electrical Characteristics Ta = 25
Parameter
Symbol
collector cut-off current
ICBO
emitter cut-off current
DC current gain
IEBO
BC849B; BC850B
Testconditons
Min
Unit
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
5
ìA
100
nA
240
450
hFE
BC849B; BC850B
IC = 2 mA; VCE = 5 V;
BC849C; BC850C
collector-emitter saturation voltage
VCEsat
base-emitter saturation voltage
VBEsat
200
290
450
420
520
800
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB = 5 mA
200
600
mV
IC = 10 mA; IB = 0.5 mA; *1
700
IC = 100 mA; IB = 5 mA; *1
base-emitter voltage
VBE
Typ
IC = 0; VEB = 5 V
IC = 10 ìA; VCE = 5 V;
BC849C; BC850C
DC current gain
Max
IE = 0; VCB = 30 V
IC = 2 mA; VCE = 5 V; *2
mV
900
580
660
IC = 10 mA; VCE = 5 V;*2
mV
700
mV
770
mV
collector capacitance
Cc
IE = ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
emitter capacitance
Ce
IC = ic = 0; VEB = 500 mV; f = 1 MHz
11
pF
transition frequency
fT
noise figure
F
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f =
10 Hz to 15.7 kHz
4
dB
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f =
1 kHz; B = 200 Hz
4
dB
*1 VBEsat decreases by about 1.7 mV/K with increasing temperature.
*2 VBE decreases by about 2 mV/K with increasing temperature.
hFE Classification
TYPE
BC849B
BC849C
BC850B
BC850C
Marking
2B
2C
2F
2G
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2