Transistors IC SMD Type Product specification BC849, BC850 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage (max. 45 V). +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage VCBO Rating Unit 30 V 50 V 30 V collector-emitter voltage VCEO 45 V emitter-base voltage VEBO 5 V collector current (DC) IC 100 mA peak collector current ICM 200 mA peak base current IBM 200 mA Ptot 250 mW storage temperature Tstg -65 to 150 junction temperature Tj 150 Tamb -65 to 150 Rth(j-a) 500 total power dissipation Tamb 25 * operating ambient temperature thermal resistance from junction to ambient * K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BC849, BC850 Electrical Characteristics Ta = 25 Parameter Symbol collector cut-off current ICBO emitter cut-off current DC current gain IEBO BC849B; BC850B Testconditons Min Unit 15 nA IE = 0; VCB = 30 V; Tj = 150 °C 5 ìA 100 nA 240 450 hFE BC849B; BC850B IC = 2 mA; VCE = 5 V; BC849C; BC850C collector-emitter saturation voltage VCEsat base-emitter saturation voltage VBEsat 200 290 450 420 520 800 IC = 10 mA; IB = 0.5 mA 90 250 mV IC = 100 mA; IB = 5 mA 200 600 mV IC = 10 mA; IB = 0.5 mA; *1 700 IC = 100 mA; IB = 5 mA; *1 base-emitter voltage VBE Typ IC = 0; VEB = 5 V IC = 10 ìA; VCE = 5 V; BC849C; BC850C DC current gain Max IE = 0; VCB = 30 V IC = 2 mA; VCE = 5 V; *2 mV 900 580 660 IC = 10 mA; VCE = 5 V;*2 mV 700 mV 770 mV collector capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz 2.5 pF emitter capacitance Ce IC = ic = 0; VEB = 500 mV; f = 1 MHz 11 pF transition frequency fT noise figure F IC = 10 mA; VCE = 5 V; f = 100 MHz 100 MHz IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f = 10 Hz to 15.7 kHz 4 dB IC = 200 ìA; VCE = 5 V; RS = 2 kÙ,f = 1 kHz; B = 200 Hz 4 dB *1 VBEsat decreases by about 1.7 mV/K with increasing temperature. *2 VBE decreases by about 2 mV/K with increasing temperature. hFE Classification TYPE BC849B BC849C BC850B BC850C Marking 2B 2C 2F 2G http://www.twtysemi.com [email protected] 4008-318-123 2 of 2