Product specification 2PC4081 Features High current (max. 100 mA) Low voltage (max. 40 V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA mW Total power dissipation * Ptot 200 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Testconditons Min Typ IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 Emitter cut-off current IEBO IC = 0; VEB = 4 V DC current gain 2PC4081Q 2PC4081R 2PC4081S hFE IC = 1 mA; VCE = 6 V Collector-emitter saturation voltage 120 180 270 nA 5 ìA 100 nA 400 Cc IE = ie = 0; VCB = 12 V; f = 1 MHz Transition frequency fT IC = 2 mA; VCE = 12 V; f = 100 MHz 300 ìs; ä Unit 100 270 390 560 VCE(sat) IC = 50 mA; IB = 5 mA; * Collector capacitance * Pulse test: tp Max 2 100 3.5 mV pF MHz 0.02. hFE Classification TYPE 2PC4081Q 2PC4081R 2PC4081S Marking ZQ ZR ZS http://www.twtysemi.com [email protected] 4008-318-123 1 of 1