TYSEMI BCX18

Transistors
IC
SMD Type
Product specification
BCX17,BCX18
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
Features
Low current (max. 100 mA).
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low voltage (max. 32 V).
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
BCX17
BCX18
Unit
Collector-base voltage
Parameter
VCBO
-50
-30
V
Collector-emitter voltage
VCEO
-45
-25
V
VEBO
-5
V
IC
-500
mA
ICM
-1000
mA
Peak base current
IBM
-200
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
Emitter-base voltage
Collector current
Peak collector current
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
IE = 0; VCB = -20 V
ICBO
IE = 0; VCB = -20 V; Tj = 100
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Testconditons
ICBO
Min
Typ
IC = 0; VEB = -5 V
IC = -100 mA; VCE = -1 V
100
IC = -300 mA; VCE = -1 V
70
IC = -500 mA; VCE = -1 V
40
Max
Unit
-100
nA
-5
ìA
-100
nA
600
VCE(sat)
IC = -500 mA; IB = -50 mA
-620
mV
Base to emitter voltage
VBE
IC = -500 mA; VCE = -1 V
-1.2
V
Collector capacitance
CC
IE = ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
9
80
pF
MHz
hFE Classification
TYPE
BCX17
BCX18
Marking
T1
T2
http://www.twtysemi.com
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4008-318-123
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