TYSEMI BSS87

IC
SMD Type
Type
SMD
Product specification
BSS87
SOT-89
■ Features
Unit: mm
+0.1
4.50-0.1
● High-speed switching
+0.1
1.50-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
● Low RDS(on)
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
+0.1
2.60-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
1
+0.1
4.00-0.1
● No secondary breakdown.
1 Gate
+0.1
0.40-0.1
+0.1
3.00-0.1
1. Source
Base
1.
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Rating
Unit
Drain-to-source voltage
VDSS
200
V
Gate-to-source voltage
VGS
±20
V
280
mA
1.1
A
1
W
RθJA
125
℃/W
TJ, Tstg
-55 to 150
℃
Drain Current
Symbol
– Continuous
1
ID
– Pulsed
PD
Total power dissipation @ TA = 25℃
Thermal resistance,junction-to-ambient
Operating and storage temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-to-source breakdown voltage
Zero Gate Voltage Drain Current
Symbol
Test conditons
Min
V(BR)DSS
VGS = 0 V, ID = 250 μA
200
IDSS
VDS = 200 V, VGS = 0
IGSS
VGS = ± 20 V, VDS = 0
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 1.0 mA
Static drain-to-source on-rResistance
RDS(on)
VGS = 10V, ID = 400mA
Gate-source leakage current
Input capacitance
Ciss
Output capacitance
Coss
0.8
Typ
Max
Unit
60
μA
±0.1
μA
2.8
V
6
Ω
V
60
VDS = 25 V, VGS = 0, f = 1 MHz
25
Transfer capacitance
Crss
10
Turn-on delay time
td(on)
10
Rise time
Turn-off delay time
Fall time
http://www.twtysemi.com
tr
td(off)
VDD = 120 V,VGS=10V, ID = 280m A,
RGEN = 6Ω
tf
[email protected]
12
25
pF
ns
40
4008-318-123
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