IC MOSFET SMD Type Type SMD Product specification 2SK2110 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS(on)=1.5 MAX.@VGS=4.0V,ID=0.3A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 Low on-resistance 1 Gate 1. Source Base 1. 0.40 +0.1 -0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 100 V Gate to source voltage VGSS 20 V ID 0.5 A Idp 1.0 A Drain current Power dissipation * PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 W * 16 cm2X0.7mm,ceramic substrate used Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance IDSS VDS=100V,VGS=0 IGSS VGS= 20V,VDS=0 VDS=10V,ID=1mA 0.8 Yfs VDS=10V,ID=0.3A 0.4 RDS(on) Input capacitance Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Turn-off delay time Typ Max Unit 1.0 A 10 1.5 2.0 nA V S VGS=4.0V,ID=0.3A 0.95 1.5 VGS=10V,ID=0.3A 0.82 1.2 100 pF 38 pF 10 pF td(on) 2 ns tr 1.3 ns 38 ns 13 ns td(off) Fall time Min VGS(th) Output capacitance Rise time Testconditons VDS=10V,VGS=0,f=1MHZ ID=0.3A,VGS(on)=10V,RL=83 ,RG=10 ,VDD=25V tf Marking Marking NT http://www.twtysemi.com [email protected] 4008-318-123 1 of 1