MOSFET IC DIP Type SMD Type Type Product specification 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS(ON) 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Switching Speed +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low Input/Output Leakage 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Drain-Gate Voltage RGS 1.0 m Gate-Source Voltage -Continuous Symbol Rating Unit VDSS 60 V VDGR 60 V 20 VGSS Pulsed V 40 Drain Current -Continuous ID 240 mA Power Dissipation PD 300 mW 417 W Thermal Resistance, Junction to Ambient R Operating and Storage Temperature Range JA Tj, TSTG -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25 Testconditons VDSS VGS = 0V, ID = 10 IDSS VDS = 60V, VGS = 0V A Min Typ 60 70 IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance @ Tj = 25 On-State Drain Current Unit V 1.0 A 500 @ TC = 125 Gate-Body Leakage Max RDS (ON) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time tD(ON) Turn-Off Delay Time tD(OFF) VGS = 15V, VDS = 0V 10 VDS = VGS, ID = 250mA 1.0 2.5 VGS = 10V, ID = 250mA 1.6 3 VGS = 4.5V, ID = 200mA 2.0 4 VGS = 10V, VDS = 7.5V 0.8 VDS =10V, ID = 0.2A 80 1.0 VDD = 30V, ID = 0.2A,RL = 150 = 10V,RGEN = 25 ,VGEN V A mS 22 VDS = 25V, VGS = 0V,f = 1.0MHz nA 50 pF 11 25 pF 2.0 5.0 pF 7.0 20 ns 11 20 ns Marking Marking K7B http://www.twtysemi.com [email protected] 4008-318-123 1 of 1