TYSEMI 2N7002E

MOSFET
IC
DIP Type
SMD
Type
Type
Product specification
2N7002E
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
Low Input Capacitance
0.55
Low Gate Threshold Voltage
+0.1
1.3-0.1
+0.1
2.4-0.1
Low On-Resistance: RDS(ON)
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Fast Switching Speed
+0.05
0.1-0.01
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Low Input/Output Leakage
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Drain-Gate Voltage
RGS
1.0 m
Gate-Source Voltage -Continuous
Symbol
Rating
Unit
VDSS
60
V
VDGR
60
V
20
VGSS
Pulsed
V
40
Drain Current -Continuous
ID
240
mA
Power Dissipation
PD
300
mW
417
W
Thermal Resistance, Junction to Ambient
R
Operating and Storage Temperature Range
JA
Tj, TSTG
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25
Testconditons
VDSS
VGS = 0V, ID = 10
IDSS
VDS = 60V, VGS = 0V
A
Min
Typ
60
70
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance @ Tj = 25
On-State Drain Current
Unit
V
1.0
A
500
@ TC = 125
Gate-Body Leakage
Max
RDS (ON)
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
tD(ON)
Turn-Off Delay Time
tD(OFF)
VGS =
15V, VDS = 0V
10
VDS = VGS, ID = 250mA
1.0
2.5
VGS = 10V, ID = 250mA
1.6
3
VGS = 4.5V, ID = 200mA
2.0
4
VGS = 10V, VDS = 7.5V
0.8
VDS =10V, ID = 0.2A
80
1.0
VDD = 30V, ID = 0.2A,RL = 150
= 10V,RGEN = 25
,VGEN
V
A
mS
22
VDS = 25V, VGS = 0V,f = 1.0MHz
nA
50
pF
11
25
pF
2.0
5.0
pF
7.0
20
ns
11
20
ns
Marking
Marking
K7B
http://www.twtysemi.com
[email protected]
4008-318-123
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