DIP SMD Type DIP SMDType Type Type IC Transistors IC Product specification KHP45N03 LT TO220 Features Low on-state resistance Fast switching. 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS Drain current (DC) ID Power Dissipation Unit V 15 45 A PD 86 W thermal resistance from junction to mounting base Rth(j-mb) 1.75 K/W thermal resistance from junction to ambient Rth(j-a) 60 K/W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 http://www.twtysemi.com [email protected] 4008-318-123 1of 2 DIP SMD Type DIP SMDType Type Type IC Transistors MOSFET IC Product specification KHP45N03 LT Electrical Characteristics Tj= 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Gate-Threshold Voltage VGS(th) Testconditons 30 VDS = VGS, ID = 1mA 1 Max 1.5 2 V 100 nA 10 A VGS = 5 V, ID = 25 A 20 24 VGS = 10V, ID = 25A 16 21 VDS = 0 V, VGS = IDSS VDS = 30 V, VGS = 0 V 5V gfs Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 25 V; ID = 25 A 16 S 23 VDS=24V,VGS=5V,ID=40A nC 3 12 2500 380 450 Crss 250 300 td(on) 30 45 tr 80 130 95 135 40 55 Fall-Time tf Continuous Source Current (Diode Conduction) IS VDS=25V,VGS=0V,f=1MHz VDD =15V, ID =25A, VGS = 5V, RGEN =5 peak source (diode forward) current ISM Tmb = 25 ; pulsed; tp Diode Forward Voltage VSD IS = 25A, VGS = 0 V *Pulse test: PW 8 2000 td(off) m 45 VDS = 5V, ID = 25 A;TJ=175 Forward transconductance Unit 10 IGSS rDS(on) Typ 0.05 Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance * Min VGS = 0 V, ID = 0.25mA 10 s 0.95 pF ns 45 A 180 A 1.2 V 300 ìs duty cycle 2%.. http://www.twtysemi.com [email protected] 4008-318-123 2of 2