Product specification DMP3030SN NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SC59 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • • • Drain SC59 D Gate ESD protected TOP VIEW Gate Protection Diode S G Source Internal Schematic EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State Pulsed Drain Current (Note 3) Thermal Characteristics Symbol VDSS VGSS ID IDM Unit V V A A Value 500 250 -65 to +150 Unit mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Value -30 ±20 -0.7 -2.8 Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -10 ±10 V μA μA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) ⎯ -3.0 0.25 0.45 V Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD ⎯ ⎯ ⎯ 0.20 0.35 1 -0.8 ⎯ -1.1 S V VDS = -10V, ID = -1.0mA VGS = -10V, ID = -0.4A VGS = -4.5V, ID = -0.4A VDS = -10V, ID = -0.4A VGS = 0V, IS = -0.7A Ciss Coss Crss ⎯ ⎯ ⎯ 160 120 50 ⎯ ⎯ ⎯ pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) tr tf ⎯ ⎯ ⎯ ⎯ 10 25 25 40 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50Ω Notes: Ω Test Condition 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. http://www.twtysemi.com [email protected] 1 of 1