Product specification DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V RDS(ON) < 64mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) • • SOT-23 Drain D Gate Source TOP VIEW Maximum Ratings Equivalent Circuit S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) ID IDM IS Value 30 ±12 5.4 4.6 19 2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMN3052L Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V μA IGSS ⎯ ⎯ ⎯ 1 ±80 ±800 VGS(th) 0.62 1.2 32 42 64 100 V ⎯ 1.2 S V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 5V, VGS = 0V f = 1.0MHz nC VGS = 4.5V, VDS = 15V, ID = 5.8A |Yfs| VSD ⎯ ⎯ 0.9 26 33 52 78 8 0.75 Ciss Coss Crss Qg Qgs Qgd ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 555 109 82 6.3 1.3 1.7 RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes: Symbol ⎯ ⎯ ⎯ ⎯ nA mΩ Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 3.8A VGS = 2.0V, ID = 2.0A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A 3. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2