Product specification DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS(ON) < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • • • SOT-23 Drain D Gate EQUIVALENT CIRCUIT TOP VIEW Maximum Ratings S G Source TOP VIEW @TA = 25°C unless otherwise specified Characteristic Units V V IDM Value -20 ±12 -2.7 -2 8 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Symbol PD RθJA Value 1.08 115 Units W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 3) ID A A Thermal Characteristics Notes: 1. 2. 3. Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMP2215L Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -800 ⎯ ⎯ ±80 V nA nA ⎯ 80 165 -1.25 V 100 215 mΩ On-State Drain Current ID(ON) Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage IGSS -20 ⎯ -6 -3 ⎯ VGS(th) -0.45 Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes: A RDS (ON) ⎯ |Yfs| VSD ⎯ ⎯ 4 ⎯ ⎯ -1.26 S V Ciss Coss Crss Rg Qg Qgs Qgd ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 250 88 58 12 4.3 0.9 2.1 ⎯ ⎯ ⎯ 16 5.3 ⎯ ⎯ pF pF pF Ω nC Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VDS ≤ -5V, VGS = -4.5V VDS ≤ -5V, VGS = -2.5V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.7A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.7A VGS = 0V, IS = -2.7A VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = -4.5V, VDS = -10V, ID = -2.7A 4. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2