TYSEMI DTA114EUA

SMD Type
Product specification
DTA114EUA
Features
PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)
Built-In Bias Resistors Enable The Configuration of An Inverter
Circuit Without Connecting External Input Resistors
(See Equivalent Circuit).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-40 to +10
V
IO
-50
IC(Max)
-100
PD
200
Output Current
Power Dissipation
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
mA
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Input Voltage
Output Voltage
Input Current
DC Current Gain
Min
Typ
Max
VCC = -5V , IO = -100 A
VI(on)
VO = -0.3V , IO = -10mA
VO(on)
IO/II = -10mA/-0.5mA
-0.3
V
-0.5
V
-3
VI = -5V
-0.88
mA
IO(off)
VCC = -50V , VI = 0V
-0.5
A
GI
VO = -5V , IO = -5mA
30
Input Resistance
R1
7
10
13
Resistance Ratio
R2/R1
0.8
1
1.2
Transistion Frequency
Unit
VI(off)
II
Output Current
Testconditons
fT *
VCE = -10V , IE = 5mA , f = 100MHz
250
k
MHz
* Characteristics of built-in transistor
Marking
Marking
14
http://www.twtysemi.com
[email protected]
4008-318-123
1of 3
SMD Type
Product specification
DTA114EUA
Equivalent Circuit
Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
2of 3
SMD Type
Product specification
DTA114EUA
http://www.twtysemi.com
[email protected]
4008-318-123
3of 3