TYSEMI DTDG23YP

SMD Type
Product specification
DTDG23YP
Features
NPN Epitaxial Planar Silicon Transistor
(with built-in resistors and zener diode).
High DC Current Gain.
Built-in Zener Diode Gives Strong Protection
Against Reverse Surge By L-load (an inductive load).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
60 10
V
Input Voltage
VIN
-6 to +40
V
IC
1
ICP *1
2
Collector Current
Power Dissipation
PD
*2
1.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
A
W
*1 Pw 10ms, Duty cycle 2%
*2 When mounted on 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
Symbol
Testconditons
Min
Typ
Max
Unit
VI(off)
VCC = 5V , IO = 100 A
VI(on)
VO = 0.4V , IO = 100mA
VO(on)
IO/II = 500mA/5mA
0.4
V
VI = 5V
3.6
mA
VCC = 40V , VI = 0V
0.5
A
II
IO(off)
0.3
V
2
DC Current Gain
GI
Input Resistance
R1
1.54
2.2
2.86
k
Emitter-base Resistance
R2
7
10
13
k
Transistion Frequency
fT *
VO = 2V , IO = 500mA
VCE = 5V , IE = -0.1A , f = 30MHz
300
80
MHz
* Characteristics of built-in transistor
http://www.twtysemi.com
[email protected]
4008-318-123
1of 3
SMD Type
Product specification
DTDG23YP
Marking
Marking
E02
Equivalent Circuit
Electrical Characteristics Curves
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 3
SMD Type
Product specification
DTDG23YP
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3