SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor (with built-in resistors and zener diode). High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Supply Voltage VCC 60 10 V Input Voltage VIN -6 to +40 V IC 1 ICP *1 2 Collector Current Power Dissipation PD *2 1.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 A W *1 Pw 10ms, Duty cycle 2% *2 When mounted on 40x40x0.7mm ceramic board. Electrical Characteristics Ta = 25 Parameter Input Voltage Output Voltage Input Current Output Current Symbol Testconditons Min Typ Max Unit VI(off) VCC = 5V , IO = 100 A VI(on) VO = 0.4V , IO = 100mA VO(on) IO/II = 500mA/5mA 0.4 V VI = 5V 3.6 mA VCC = 40V , VI = 0V 0.5 A II IO(off) 0.3 V 2 DC Current Gain GI Input Resistance R1 1.54 2.2 2.86 k Emitter-base Resistance R2 7 10 13 k Transistion Frequency fT * VO = 2V , IO = 500mA VCE = 5V , IE = -0.1A , f = 30MHz 300 80 MHz * Characteristics of built-in transistor http://www.twtysemi.com [email protected] 4008-318-123 1of 3 SMD Type Product specification DTDG23YP Marking Marking E02 Equivalent Circuit Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification DTDG23YP http://www.twtysemi.com [email protected] 4008-318-123 3 of 3