Transistors IC SMD Type Product specification 2SB1125 Features High DC Current gain. Large Current Capaity and wie ASO Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -10 V Collector current IC -0.7 A Collector current (pulse) ICP -2 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = -10 A , IE = 0 -80 V Collector-emitter breakdown voltage VCEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage VEBO IE = -10ìA , IC = 0 -10 V Collector cutoff current ICBO VCB = -40V , IE = 0 -100 nA Emitter cutoff current IEBO VCB = -8V , IE = 0 -100 nA DC current Gain hFE VCE = -2V , IC = -50mA 5000 VCE = -2V , IC = -500mA 3000 Collector-emitter saturation voltage VCE(sat) IC = -100mA , IB = -0.1mA -0.8 -1.2 V Base-emitter saturation voltage VBE(sat) IC = -100mA , IB = -0.1mA -1.3 -2.0 V Output capacitance Gain bandwidth product Cob VCB = -10V , f = 1MHz 18 pF fT VCE = -5V , IC = -50mA 200 MHz Marking Marking BH http://www.twtysemi.com [email protected] 4008-318-123 1of 3 Transistors IC SMD Type Product specification 2SB1125 http://www.twtysemi.com [email protected] 4008-318-123 2of 3 Transistors IC SMD Type Product specification 2SB1125 http://www.twtysemi.com [email protected] 4008-318-123 3of 3