WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance. Featrues SOD-123H • Low profile surface mounted application in order to We declare that the material optimize board space. of product compliance with RoHS requirements. efficiency. • Low power loss, high Pb-Free package is available • High current capability, low forward voltage drop. RoHS product for packing code suffix ”G” • High surge capability. Halogen free product for packing code suffix “H” for overvoltage protection. • Guardring • Ultra high-speed MAXIMUM RATINGS switching. • Silicon epitaxial planar chip, metal silicon junction. Rating parts meet environmental Symbol standards Valueof • Lead-free MIL-STD-19500 /228 32 Collector–Emitter Voltage V CEO "G" • RoHS product for packing code suffix Halogen freeVoltage product for packing code suffix "H"60 Collector–Base V CBO Mechanical data Emitter–Base Voltage V EBO 5.0 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Unit Vdc Vdc SOT–23 Vdc 0.040(1.0) 0.024(0.6) THERMAL CHARACTERISTICS 0.031(0.8) Typ. Pr el im ina Characteristic Symbol Max Unit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Total Device Dissipation FR– 5 Board, (1) 2 • Mounting Position : Any PD 225 mW EMITTER TA = 25°C • Weight : Approximated 0.011 gram 1.8 mW/°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation 300 mW PD Ratings at 25℃ ambient temperature unless otherwise specified. Alumina Substrate, (2) TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. 2.4 mW/°C Derate above 25°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 417 °C/W FM130-MH FM140-MH°C FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL RATINGS Junction and Storage Temperature TJ ,FM120-MH Tstg –55 to +150 Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM DEVICE MARKING Maximum RMS Voltage BCW65ALT1 EA Maximum DC Blocking=Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current (T = 25°CIunless O ELECTRICAL CHARACTERISTICS otherwise noted.) A Peak Forward Surge Current 8.3 ms single half sine-wave Characteristic Symbol IFSM Min Typ 1.0 30 Max superimposed on rated load (JEDEC method) OFF CHARACTERISTICS Breakdown TypicalCollector–Emitter Junction Capacitance (Note 1) Voltage Operating (IC =Temperature 10mAdc, I BRange =0) CJ V (BR)CEO TJ Storage Temperature Range Collector–Emitter Breakdown Voltage (IC = 10 µAdc, V EB = 0 ) CHARACTERISTICS V Maximum Reverse (I E=Average 10 µAdc, I C = 0)Current at @T A=25℃ Rated DC Blocking Voltage Collector Cutoff Current 32 -55 to +125 — — — — TSTG V (BR)CES @T A=125℃ 60 40 120 Unit Vdc -55 to +150 - 65 to +175 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0AVoltage DC Emitter–Base Breakdown RΘJA Typical Thermal Resistance (Note 2) (BR)EBO IR 0.50 5.0 — 0.70 — (VCE = 32 Vdc, IE = 0 , TA = 150°C) 2- Thermal Resistance From Junction to Ambient 0.85 0.5 0.9 0.92 Vdc 10 I CES NOTES:(VCE = 32 Vdc, IE = 0 ) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.031(0.8) Typ. 1 BASE Method 2026 3 COLLECTOR ry • Epoxy : UL94-V0 rated flame retardant 800 mAdc Collector Current — Continuous IC • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. — — 20 nAdc — — 20 µAdc — — 20 nAdc Emitter Cutoff Current (V EB= 4.0 Vdc, I C = 0) I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:$LT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application orderotherwise to • Low profile ELECTRICAL CHARACTERISTICS (TA = 25°C in unless noted) (Continued) optimize boardCharacteristic space. Symbol Min • Low power loss, high efficiency. ON CHARACTERISTICS • High current capability, low forward voltage drop. DC Current hFE surge Gain capability. • High ( I = 100 µAdc, V = 10 Vdc ) C CE • Guardring for overvoltage protection. ( IC= 10 mAdc, VCE switching. = 1.0 Vdc ) high-speed • Ultra ( IC= 100epitaxial mAdc, Vplanar Vdc )metal silicon junction. CE = 1.0chip, • Silicon ( IC= 500 mAdc, Vdc ) partsVmeet environmental standards of • Lead-free CE = 2.0 MIL-STD-19500 /228 Collector–Emitter Saturation Voltage Unit 0.012(0.3) Typ. — 35 75 100 35 — — — — — 220 250 — — — 0.7 0.3 — — — — 2.0 0.071(1.8) 0.056(1.4) Vdc Halogen free product for packing code suffix "H" ( IC = 100 mAdc, IB = 10 mAdc ) Mechanical data Base–Emitter Saturation Voltage V Vdc0.040(1.0) BE(sat) fT (I C = 20mAdc, V CE =2026 10 Vdc, f = 100 MHz) Method 0.031(0.8) Typ. 100 — 0.031(0.8) Typ. — MHz C obo — Dimensions in inches and (millimeters) — 12 pF C ibo — — 80 pF — — CHARACTERISTICS 10 dB im ina Output Capacitance • Polarity : Indicated by cathode band (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) • Mounting Position : Any Input Capacitance • Weight : Approximated 0.011 gram (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 0.024(0.6) ry : UL94-V0 flame) retardant • Epoxy ( IC = 500 mAdc, IB rated = 50 mAdc SOD-123H • Case : Molded plastic, SMSMALL–SIGNAL CHARACTERISTICS , Current–Gain — Bandwidth Product • Terminals :Plated terminals, solderable per MIL-STD-750 C Max 0.146(3.7) 0.130(3.3) V CE(sat) product for packing code suffix "G" • RoHS ( IC = 500 mAdc, IB = 50 mAdc ) EB Typ Noise Figure NF MAXIMUM RATINGS AND ELECTRICAL (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Ratings at 25℃ ambient temperature unless otherwise specified. SWITCHING CHARACTERISTICS Pr el Single phase half wave, 60Hz, resistive of inductive load. Turn–On Time — — 100 ns t on For capacitive load, derate current by 20% (I B1= I B2= 15 mAdc) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH RATINGS Turn–Off Time — — 400 ns t off Marking Code 12 13 14 15 16 18 10 115 120 (I C= 150 mAdc, R L = 150 Ω ) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Ordering Information Maximum RMS Voltage 14 21 28 35 42 56 70 105 140 20 VDC Device Marking Shipping Maximum Average Forward Rectified Current IO BCW65ALT1 EA 3000/Tape&Reel Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 30 40 50 60 80 100 150 200 VRMS Maximum DC Blocking Voltage 1.0 30 superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" .083(2.10) 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. im ina Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .004(0.10)MAX. Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 VDC 20 30 Maximum DC Blocking Voltage IO .020(0.50) .012(0.30) Peak Forward Surge Current 8.3 ms single half sine-wave Maximum Average Forward Rectified Current IFSM superimposed on rated load (JEDEC method) Storage Temperature Range 0.037 0.95 115 150 120 200 35 42 56 70 105 140 60 80 100 150 200 1.0 30 40 120 -55 to +150 - 65 to +175 0.037 0.95 0.50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 100 50 TSTG CHARACTERISTICS 18 80 28 -55 to +125 TJ Operating Temperature Range 16 60 40 Dimensions CJ in inches and (millimeters) Typical Junction Capacitance (Note 1) Maximum Forward Voltage at 1.0A DC 15 50 RΘJA Typical Thermal Resistance (Note 2) 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 0.079 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.