WILLAS MMBT2222AWT1

WILLAS
FM120-M+
THRU
MMBT2222AWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
NPN
Silicon
optimize board space.
These transistors are designed for general
• Low power loss, high efficiency.
amplifier
applications.
High current
capability,
low forward They
voltageare
drop.
•purpose
in thecapability.
SOT–323/SC–70 package which
High surge
•housed
forfor
overvoltage
protection.
•isGuardring
designed
low power
surface mount
Ultra high-speed switching.
•applications.
• Silicon epitaxial planar chip, metal silicon junction.
We declare that the material of product
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
COLLECTOR
0.071(1.8)
0.056(1.4)
1
BASE
compliance
with RoHS requirements.
MIL-STD-19500 /228
2
EMITTER
package
is available
RoHS product
for packing
code suffix "G"
•Pb-Free
RoHS
product
for packing
code suffix
”G” "H"
Halogen
free product
for packing
code suffix
SOT–323
Halogen free product
for packing code suffix “H”
Mechanical
data
•
Collector–Base
Voltage
V CBO
Position
: Any
• Mounting
Emitter–Base
Voltage 0.011 gram
V EBO
• Weight
: Approximated
Collector Current — Continuous
0.031(0.8) Typ.
Value
Unit
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
0.031(0.8) Typ.
im
ina
Rating
Symbol
Method 2026
Collector–Emitter
Voltage
V CEO
Polarity
: Indicated
by cathode band
0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case : Molded
MAXIMUM
RATINGS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
I
Dimensions in inches and (millimeters)
C
MAXIMUM RATINGS AND
ELECTRICAL CHARACTERISTICS
Pr
el
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
THERMAL CHARACTERISTICS
For capacitive load, derate current by 20%
Characteristic
Symbol
Max
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
Total Device Dissipation FR– 5 Board,
Marking Code
12
13 150 14
15
16
18
10
115
120
PD
mW
T
= 25°CPeak Reverse Voltage
A
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Volt
VRRM
Thermal Resistance Junction to Ambient
RθJA
833
°C/W
Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Junction and Storage Temperature
TJ , Tstg
–55 to +150
°C
Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum Average Forward Rectified Current
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC
method)
MMBT2222AWT1
= P1
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
1.0
30
40
120
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Characteristic
Storage Temperature Range
TJ
Symbol-55 to +125
Min
TSTG
OFF CHARACTERISTICS
Max
- 65 to +175
Collector–Base
Maximum Average
ReverseBreakdown
Current at Voltage
@T A=25℃
(I C = 10 µAdc,
Rated DC Blocking
VoltageI E = 0)
@T A=125℃
IR
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Base Cutoff Current
NOTES:
Amp
℃/W
PF
-55 to +150
Unit
℃
℃
Collector–Emitter
Breakdown Voltage (1) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
CHARACTERISTICS
V (BR)CEO
40
—
Vdc
Volt
0.9
0.92
VF
0.50
0.70
0.85
Maximum Forward
mAdc, at
I B1.0A
= 0) DC
(I C = 1.0Voltage
Amp
2- Thermal Resistance
to Ambient
(V = 60 From
Vdc, Junction
V = 3.0
Vdc)
CE
EB
CE
EB
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
0.5
V (BR)CBO
75
—
V
6.0
—
Vdc
I BL
—
20
nAdc
I CEX
—
10
nAdc
(BR)EBO
10
Vdc
mAm
1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT2222AWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Batch processCHARACTERISTICS
design, excellent power
offers
•ELECTRICAL
(T Adissipation
= 25°C unless
otherwise noted) (Continued)
better reverse leakage current and thermal resistance.
Characteristic
application in order to
• Low profile surface mounted
Symbol
loss, Gain
high (1)
efficiency.
• Low power
DC Current
capability,
• High current
(I C = 0.1 mAdc, V CElow
= 10forward
Vdc) voltage drop.
capability.
• High surge
(I C = 1.0 mAdc, V CE = 10 Vdc)
formAdc,
overvoltage
protection.
• Guardring
(I C = 10
V CE = 10
Vdc)
switching.
• Ultra (Ihigh-speed
C = 150 mAdc, V CE = 10 Vdc)
• Silicon epitaxial planar chip, metal silicon junction.
(I C = 500 mAdc, V CE = 10 Vdc)
parts meet environmental standards of
• Lead-free
hFE
Min
SOD-123H
Max
Unit
0.146(3.7)
0.130(3.3)
––
ON
CHARACTERISTICS
(1)
optimize
board space.
35
50
75
100
40
Collector–Emitter
MIL-STD-19500
/228 Saturation Voltage(1)
Vdc
(I C free
= 500
mAdc,for
I B=
50 mAdc)
Halogen
product
packing
code suffix "H"
Base–Emitterdata
Saturation Voltage(1)
Mechanical
•
•
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1.2
2.0
Vdc
0.040(1.0)
0.024(0.6)
fT
C obo
0.031(0.8) Typ.
300 in inches ––
MHz
Dimensions
and (millimeters)
––
8.0
pF
Input Capacitance
C ibo
––
30
pF
I C = 0, f = 1.0AND
MHz) ELECTRICAL CHARACTERISTICS
(VMAXIMUM
EB = 0.5 Vdc, RATINGS
Impedance
Ratings at 25℃Input
ambient
temperature unless otherwise specified.
h ie
0.25
1.25
kΩ
=
10 Vdc,
= 10 mAdc,
f = 1.0 kHz)
(V
Single phase half CE
wave,
60Hz,I Cresistive
of inductive
load.
Feedback
Ratio
–4
For capacitive Voltage
load, derate
current
by 20%
h re
––
4.0
X 10
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH UN
SYMBOL FM120-MH
RATINGS
Small–Signal Current Gain
Marking Code
12
13
14h fe
15
16
18
10 —
115
120
75
375
(V = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
20
30
40
50
60
80
100
150
200
Maximum RecurrentCEPeak Reverse
Voltage
Vol
VRRM
Output Admittance
Vol
14
21
28 h oe
35
42
56
70µmhos 105
140
25
200
Maximum RMS Voltage
VRMS
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Vol
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Noise Figure
NF
––
4.0
dB
Am
Maximum Average
Rectified Current
IO
1.0
(V Forward
CE= 10 Vdc, I C = 100 µAdc, R S= 1.0 kΩ, f = 1.0 kHz)
Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
SWITCHING CHARACTERISTICS
Pr
el
0.6
––
BE(sat)
0.031(0.8) Typ.
• Polarity
: Indicated by cathode band
(I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz)
Position
: Any
• Mounting
Output
Capacitance
=
10
Vdc,
I E = 0,
f = 1.0
MHz)
(V
• Weight :CBApproximated
0.011
gram
0.3
1.0
im
ina
Method 2026
Current–Gain — Bandwidth Product
––
––
ry
V
SMALL–SIGNAL CHARACTERISTICS
0.071(1.8)
0.056(1.4)
VCE(sat)
mAdc,
I B = code
15 mAdc)
C = 150for
packing
suffix "G"
• RoHS(Iproduct
= 150 mAdc,
I B =flame
15 mAdc)
Epoxy(I :CUL94-V0
rated
retardant
(I C = 500 mAdc, I B = 50 mAdc)
Case : Molded plastic, SOD-123H
0.012(0.3) Typ.
––
––
––
—
––
superimposed on rated load (JEDEC method)
Delay Time
(V CC = 3.0 Vdc, V BE= – 0.5 Vdc
RΘJA
Rise
Time
I
Typical Junction Capacitance (Note 1)C = 150 mAdc, I B1 =C15
J mAdc)
Typical Thermal Resistance (Note 2)
Operating Temperature
Range
Storage Time
Storage Temperature Range
Fall Time
TJ mAdc
(V CC = 30 Vdc, I C = 150
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Ordering Information@T A=125℃
Rated DC Blocking Voltage
Device
tr
-55 to +125
I B1 = I B2 = 15 mAdc)
Marking
— 40
— 120
—
ts
10 ℃/W
25
ns
-55
to
+150
225
ns
PF
℃
- 65 to +175
—
60
tf
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
VF
NOTES:
td
TSTG
Maximum Forward Voltage at 1.0A DC
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Vol
mAm
Shipping
MMBT2222AWT1
P1voltage of 4.0 VDC.
3000/Tape&Reel
1- Measured
at 1 MHZ and applied reverse
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT2222AWT1
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Purpose
Transistors
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
SOT−323
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
.087(2.20)
• Ultra high-speed switching.
junction.
• Silicon epitaxial planar chip, metal silicon.070(1.80)
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.012(0.3) Typ.
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.031(0.8) Typ.
im
ina
Method 2026
0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.096(2.45)
.078(2.00)
Halogen free product for packing code suffix "H"
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any .056(1.40)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Pr
el
RATINGS
Marking Code
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
IO
.016(0.40)
Peak Forward Surge Current 8.3 ms single half sine-wave
.008(0.20)
IFSM
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Dimensions
in inches
and (millimeters) -55 to +125
TJ
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
40
120
Am
Am
℃/
P
-55 to +150
℃
- 65 to +175
TSTG
Rated DC Blocking Voltage
1.0
30
℃
SOLDERING FOOTPRINT*
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.65
0.025
IR
0.65
0.50
0.025
0.70
0.85
0.5
10
0.9
0.92
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.9
0.075
2- Thermal Resistance From Junction to Ambient
0.9
0.035
0.7
0.028
2012-06
2012-11
SCALE 10:1
mm inches
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.