WILLAS FM120-M+ BCW66GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon • Batch process design, excellent power dissipation offers better reverse current and thermal resistance. ƽ We declare that leakage the material of product surface mounted application in order to • Low profilewith compliance RoHS requirements. optimize board space. Pb-Free package is available Low product power loss, high efficiency. •RoHS for packing code suffix ”G” High current capability, low forward voltage drop. •Halogen free product for packing code suffix “H” • High surge capability. for overvoltage protection. • Guardring DEVICE MARKING AND ORDERING INFORMATION • Ultra high-speed switching. Device Marking Shipping epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of •BCW66GLT1 EG 3000/Tape&Reel MIL-STD-19500 /228 MAXIMUM RATINGS for packing code suffix "G" • RoHS product Halogen free product for packing code suffix "H" Rating Symbol Value Unit SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT–23 0.071(1.8) 0.056(1.4) 3 COLLECTOR Mechanical data Collector–Emitter Voltage V CEO 45 Vdc • Epoxy : UL94-V0 rated flame retardant Collector–Base Voltage V CBO 75 Vdc • Case : Molded plastic, SOD-123H , Emitter–Base EBO Vdc • Terminals Voltage :Plated terminals, Vsolderable per7.0 MIL-STD-750 IC 800 Max Unit PD 225 mW ELECTRICAL CHARACTERISTICS Pr el Derate above 25°C temperature unless otherwise specified. 1.8 mW/°C Ratings at 25℃ ambient Resistance, Junction to Ambient SingleThermal phase half wave, 60Hz, resistive of inductive load. R θJA 556 °C/W Total Device For capacitive load,Dissipation derate current by 20% PD 300 mW Alumina Substrate, (2) TA = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Derate above 25°C 2.4 mW/°C Marking Code 12 13 14 15 16 18 10 115 120 Thermal Resistance, Junction to Ambient R 30417 40 °C/W50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM θJA 20 Junction and Storage Temperature TJ , Tstg –55 to +150 °C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS 20 30 unless otherwise noted.) ELECTRICAL CHARACTERISTICS (TA = 25°CVDC IO Characteristic Symbol Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Min RΘJA V (BR)CEO CJ 45 Maximum Average Forward Rectified Current 40 50 60 Typ Max — — 40 120 OFF CHARACTERISTICS Breakdown TypicalCollector–Emitter Thermal Resistance (Note 2) Voltage Typical(IJunction Capacitance (Note 1) C = 10mAdc, I B= 0 ) Collector–Emitter Breakdown Voltage Storage Temperature Range (IC = 10 µAdc, V EB = 0 ) V (BR)CES TSTG Emitter–BaseCHARACTERISTICS Breakdown Voltage E C Maximum Average Reverse Current at @T A=25℃ Collector Cutoff Current Rated DC Blocking Voltage (VCE = 45 Vdc, IE = 0 ) 75 Unit Vdc @T A=125℃ 5.0 0.50 — — 0.70 Vdc 0.85 I CES IR 0.92 10 20 nAdc — — 20 µAdc (V EB= 4.0 Vdc, I C = 0) — — 20 nAdc (V EB= 7.0 Vdc, I C = 0) (3) — — 100 nAdc NOTES:(VCE = 45 Vdc, IE = 0 ) (TA=150°C) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.5 — 2- Thermal Resistance From Junction to Ambient 200 — - 65 to +175 Vdc — Emitter Cutoff Current 150 -55 to +150 — 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH V (BR)EBO VF Maximum Voltage at 1.0A DC (I =Forward 10 µAdc, I = 0) -55 to +125 TJ Operating Temperature Range 80 1.0 30 superimposed on rated load (JEDEC method) EMITTER mAdc Symbol Maximum DC Blocking Voltage 0.031(0.8) Typ. 2 Dimensions in inches and (millimeters) Total Device Dissipation FR– 5 Board, (1) TA = 25°C MAXIMUM RATINGS AND 0.031(0.8) Typ. im ina • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS Position : Any • Mounting Characteristic • Weight : Approximated 0.011 gram BASE ry Method 2026 Collector Current — Continuous 0.040(1.0) 0.024(0.6) 1 I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Added IEBO test to guarantee quality for oxide defects 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:*LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to (TA = 25°C unless otherwise noted) (Continued) ELECTRICAL optimizeCHARACTERISTICS board space. high efficiency. • Low power loss,Characteristic Symbol • High current capability, low forward voltage drop. ON CHARACTERISTICS surge capability. • High DC Current Gain hFE for overvoltage protection. • Guardring ( IC= 100 µAdc, VCE = 10 Vdc ) • Ultra high-speed switching. ( IC= 10 mAdc, VCE = 1.0 Vdc ) epitaxial planar chip, metal silicon junction. • Silicon ( IC= 100 mAdc, VCE = 1.0 Vdc ) parts meet environmental standards of • Lead-free Min fT Turn–On Time t on RATINGS AND ELECTRICAL (I B1= I MAXIMUM B2= 15 mAdc,I C = 150mAdc, R L = 150Ω) Ratings atTurn–Off 25℃ ambient Time temperature unless otherwise specified. t off Single phase half wave, 60Hz,Cresistive of inductive load. (I B1= I B2= 15 mAdc,I = 150mAdc, R L = 150Ω) For capacitive load, derate current by 20% — — 110 160 — — — 400 60 — — 100 — — — 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MHz0.040(1.0) 0.024(0.6) — 12 pF — 80 pF 0.031(0.8) Typ. — 0.031(0.8) Typ. Dimensions in inches and (millimeters) — — 10 dB — — CHARACTERISTICS 100 ns 400 ns — — SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Pr el RATINGS Marking Code 50 im ina • • • Weight CHARACTERISTICS : Approximated 0.011 gram SWITCHING Unit ry V CErated = 10 flame Vdc, f = 100 MHz) (I C = 20mAdc, : UL94-V0 retardant • Epoxy Output Capacitance • Case : Molded plastic, SOD-123H C obo , (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) • Terminals :Plated terminals, solderable per MIL-STD-750 Input Capacitance Method 2026 C ibo (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Polarity : Indicated by cathode band Noise Figure NF Mounting Position : Any (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz) Max 0.146(3.7) 0.130(3.3) — ( IC= 300 mAdc, V/228 CE = 2.0 Vdc ) MIL-STD-19500 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SMSMALL–SIGNAL CHARACTERISTICS Mechanical data Product Current–Gain — Bandwidth Typ Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC:*LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. 0.146(3.7) 0.130(3.3) .063(1.60) .047(1.20) .006(0.15)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .122(3.10) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon .106(2.70) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .083(2.10) Halogen free product for packing code suffix "H" Mechanical data Method 2026 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) • Polarity : Indicated by cathode band : Any • Mounting Position .080(2.04) .070(1.78) • Weight : Approximated 0.011 gram im ina Dimensions in inches and (millimeters) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC .020(0.50) IO .012(0.30) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) IFSM 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 40 120 CHARACTERISTICS 0.037 0.95 -55 to +150 - 65 to +175 TSTG 0.037 0.95 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 0.079 2.0 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 15 50 -55 to +125 TJ Storage Temperature Range Rated DC Blocking Voltage 14 40 DimensionsRinΘJAinches and (millimeters) CJ Operating Temperature Range Maximum Forward Voltage at 1.0A DC 20 13 30 .055(1.40) .035(0.89) .004(0.10)MAX. RATINGS Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 2- Thermal Resistance From Junction to Ambient0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.