RoHS BAV99DW D T ,. L SOT-363 BAV99DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ R T C E L E ELECTRICAL CHARACTERISTICS (Tamb=25℃ J E Parameter Reverse breakdown voltage Reverse voltage leakage current W Symbol V(BR) R IR O IC N MAKING: KJG unless otherwise specified) Test conditions IR= 100µA MIN MAX 75 UNIT V VR=75V 2.5 VR=20V 0.025 715 855 1000 1250 mV 2 pF 4 nS Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Junction capacitance Cj VR=0V, f=1MHz Reveres recovery time C O µA IF=IR=10mA trr Irr=0.1×IR RC=100Ω WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] BAV99DW R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]