RoHS BAW56DW D T ,. L SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ R T O IC C O N MAKING: KJC C E L ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter E Reverse breakdown voltage J E Reverse voltage leakage current Forward voltage W Junction capacitance Reveres recovery time WEJ ELECTRONIC CO. Symbol V(BR) R unless otherwise specified) Test conditions IR= 2.5µA MIN MAX 75 UNIT V VR=75V 2.5 VR=20V 0.025 VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Cj VR=0V, f=1MHz 2 pF 4 nS IR µA IF=IR=10mA trr Irr=0.1×IR RL=100Ω Http:// www.wej.cn E-mail:[email protected] RoHS Typical Characteristics BAW56DW R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]