YEASHIN B2S

DATA SHEET
B1S THRU B10S
SEMICONDUCTOR
MINI SURFACE MOUNT GLASS PASSIVATED
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE 100 to 1000Volts CURRENT 0.5 Amperes
MDI Unit:inch(mm)
DI
FEATURES
•Plastic material used carries Underwriters
Laboratory recognition 94V-O
+
•Low leakage
.157(4.0)
.142(3.6)
•Surge overload rating-- 30 amperes peak
•Ideal for printed circuit board
~
•Exceeds environmental standards of MIL-S-19500
.008(0.2)
~
O
•High temperature soldering : 260 C / 10 seconds at terminals
.275(7.0)
MAX
.031(0.8)
.019(0.5)
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.043(1.1)
.027(0.7)
.193(4.9)
.177(4.5)
MECHANICAL DATA
.106(2.7)
.090(2.3)
•Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
•Terminals: Lead solderable per MIL-STD-202, Method 208.
.106(2.7)
.090(2.3)
•Polarity: Polarity symbols molded or marking on body.
•Mounting Position: Any.
•Weight: 0.008 ounce, 0.22 gram.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
B1S
B2S
B4S
B6S
B8S
B10S
Maximum Recurrent Peak Reverse Voltage
PARAMETER
VRRM
100
200
400
600
800
1000
V
Maximum RMS Bridge Input Voltage
VRMS
70
140
280
420
560
700
V
VDC
100
200
400
600
800
1000
V
Maximum DC Blocking Voltage
Maximum Average Forward Current TA=40℃
IAV
TA=25℃(Note 3)
Peak Forward Surge Current:8.3ms single half sine-wave
0. 5
UNITS
A
0.8*
IFSM
35
A
I2t Rating for fusing (t<8.35ms)
I2t
3.735
A2t
Maximum Forward Voltage Drop per Bridge Element at 0.5A
VF
1.0
V
superimposed on rated load (JEDEC method)
Maximum DC Reverse Current TJ=25℃
IR
at Rated DC Blocking Voltage TJ=125℃
Operating Junction and Storage Temperature Range
uA
500
CJ
25
Rθ A J
85
Rθ L J
20
TJ, TSTG
-55 to +150
Typical Junction capacitance (Note 1)
Typical thermal resistance per leg (Note2)
5.0
pF
℃/W
℃
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25oC
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1
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DEVICE CHARACTERISTICS
1.00
50
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD SURGE CURRENT, AMPERES pk
(HALF-SINE WAVE)
B1S THRU B10S
40
30
20
10
1
4
2
6
8 10
40
20
0.75
0.50
0.25
0
60 80 100
20
40
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE CURRENT, uA
INSTANTANEOUS FORWARD CURRENT,
AMPERES
0.1
1.0
1.2
150
10
O
T J = 125 C
1.0
0.1
O
T J =25 C
0.01
0
20
40
60
80
100
120
140
1.4
PERCENTAGE OF PEAK REVERSE VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Fig.3 TYPICAL FORWARD CHARACTERISTICS
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140
120
Fig.2 DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
1.0
0.8
10 0
O
10
0.6
80
AMBIENT TEMPERATURE, C
Fig.1 MAXIMUM NON-REPETITIVE SURGE CURRENT
0.01
0.4
60
Fig.4 TYPICAL REVERSE CHARACTEISTICS
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