Central TM Semiconductor Corp. 315 R3 ( 28-Mar 2001) SYMBOL VBE (SAT) TEST CONDITIONS IC=30mA, IB=3.0mA MIN MAX 0.90 UNITS V 2.0 V VBE (ON) hFE VCE=10V, IC=100mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 30 200 VCE=10V, IC=50mA VCE=10V, IC=100mA 20 200 hFE fT Ccb VCE=20V, IC=10mA, f=20MHz VCB=20V, IC=0, f=1.0MHz 40 Ceb VEB=0.5V, IE=0, f=1.0MHz (CMPT6517) VEB=0.5V, IE=0, f= 1.0MHz (CMPT6520) hFE hFE Ceb 20 15 200 MHz 6.0 pF 80 pF 100 pF SOT-23 CASE - MECHANICAL OUTLINE DATA SHEETS LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR 316 R3 ( 28-Mar 2001)