Central BFX89 BFY90 TM Semiconductor Corp. NPN SILICON RF TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING CODE: FULL PART NUMBER JEDEC TO-72 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL VCBO 30 UNITS V VCER 30 V V Collector-Emitter Voltage (RBE≤50Ω) Collector-Emitter Voltage VCEO 15 Emitter-Base Voltage VEBO 2.5 V IC 25 mA Collector Current Peak Collector Current (f ≥ 1 MHz) ICM 50 mA Power Dissipation PD 200 mW Power Dissipation (TC=25°C) PD 300 mW Operating and Storage TJ,Tstg -65 to +200 °C Thermal Resistance Junction Temperature ΘJA 875 °C/W Thermal Resistance ΘJC 583 °C/W BFY90 MIN TYP MAX UNITS ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) BFX89 SYMBOL TEST CONDITIONS MIN TYP MAX ICBO BVCBO VCB=15V IC=10µA BVCER 10 10 nA 30 30 V IC=1.0mA, RBE=50Ω IC=1.0mA 30 30 V 15 15 V 2.5 2.5 hFE IE=10µA VCE=1.0V, IC=2.0mA VCE=1.0V, IC=25mA fT fT VCE=5.0V, IC=2.0mA, f=500MHz VCE=5.0V, IC=25mA, f=500MHz 1.0 1.0 1.1 GHz 1.2 1.3 1.4 GHz Cob VCB=10V, IE=0, f=1.0MHz VCE=5.0V, IC=2.0mA, f=1.0MHz 0.6 BVCEO BVEBO hFE Cre 20 150 20 125 V 25 150 20 125 1.7 0.6 1.5 pF 0.8 pF R3 (20-March 2006) Central TM BFX89 BFY90 Semiconductor Corp. NPN SILICON RF TRANSISTORS ELECTRICAL CHARACTERISTICS (CONTINUED): (TA=25°C unless otherwise noted) BFY90 BFX89 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX Gpe Gpe Gpe Gpe NF NF VCE=10V, IC=8mA, f=200MHz VCE=10V, IC=8mA, f=800MHz VCE=10V, IC=14mA, f=200MHz 19 dB 21 VCE=10V, IC=14mA, f=800MHz VCE=5.0V, IC=2.0mA, f=100kHz 23 dB 8.0 3.3 7.0 Po VCE=5.0V, IC=2.0mA, f=800MHz VCE=10V, IC=8mA, f=205MHz Po VCE=10V, IC=14mA, f=205MHz NF dB 7.0 VCE=5.0V, IC=2.0mA, f=200MHz VCE=5.0V, IC=2.0mA, f=500MHz, RG=50Ω NF 22 UNITS 4.0 2.5 6.5 dB 4.0 dB 3.5 dB 5.0 dB 5.5 dB 6.0 mW 10 12 mW JEDEC TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR 4) CASE R3 (20-March 2006)