GaAs IC 900 MHz High Dynamic Range Amplifier AL106-84 Features SOIC-8 with Slug ■ +18 dBm Output Power 0.050 (1.27 mm) BSC PIN 8 ■ +32 dBm Output IP3 PIN 1 INDICATOR ■ 1.8 dB Noise Figure 0.244 (6.20 mm) 0.228 (5.80 mm) ■ Single +5 V Supply ■ Input and Output Matched to 50 Ω PIN 1 0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.066 (1.65 mm) 0.016 (0.41 mm) 0.016 MAX. ± 0.005 (0.12 mm) 0.068 (0.41 mm) x (1.73 mm) 45˚ CHAMFER MAX. ■ Ideal for Cellular Applications Description The AL106-84 is a high dynamic range amplifier for 900 MHz applications. The amplifier has 19 dBm output power, high input intercept point (IIP3) of 18 dBm, low noise figure of 1.8 dB and operates from a single positive bias of +5 V. External resistor sets the amplifier drain current. No external matching elements are required. As a low noise driver amplifier it is ideally suited for 900 MHz wireless base station applications. The AL106-84 is encapsulated in SOIC-8 package with slug for improved heat dissipation and reliability. EXPOSED HEAT SLUG 0.106 (2.65 mm) ± 0.005 (0.12 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 8˚ MAX. Electrical Specifications at 25°C Parameter1 Frequency Min. Typ. Small Signal Gain 800-960 MHz 13 14 dB Input P-1dB 900 MHz 5.5 7 dB 900 MHz 17.5 18.5 dBm Input IIP3 Condition PIN = -5 dBm Noise Figure 800-960 MHz 1.8 Reverse Isolation 800-960 MHz 22 Input VSWR 800-960 MHz 1.5:1 Output VSWR 800-900 MHz 1.5:1 Max. 2.4 Unit dB dB 1. Test condition VD = +5 V, ID = 80 mA. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/01A 1 GaAs IC 900 MHz High Dynamic Range Amplifier AL106-84 15 4.0 14 3.5 13 25˚C 3.0 0˚C 12 11 VSWR Gain (dB) Typical Performance Data at 25°C 70˚C 2.5 2.0 10 Input 1.5 9 1.0 8 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Frequency (GHz) Frequency (GHz) Gain vs. Frequency Over Temperature Input and Output VSWR vs. Frequency 3.0 22 Gain (dB) and POUT (dBm) Noise Figure (dB) Output 2.5 2.0 1.5 20 18 16 Gain 14 12 POUT 1.0 0.6 2 10 0.7 0.8 0.9 1.0 1.1 1.2 -2 -1 0 1 2 3 4 5 6 7 8 Frequency (GHz) PIN (dBm) Noise Figure vs. Frequency POUT and Gain vs. PIN 900 MHz Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/01A GaAs IC 900 MHz High Dynamic Range Amplifier Pin Configuration AL106-84 Pin Out Ground 3 GND Ground 4 GND Ground 5 R Current Set External Resistor 6 GND Ground 7 RF Out RF Output 8 VD +5 V Supply Through Bypass Cap Power Supply and Current Settings VD of +5 V is fed to pin 8. A 200 pF bypass capacitor should be placed as close as possible to the lead. The current can be set 60–110 mA by changing the resistor connected to pin 5 at a distance of up to 5 mm away from the lead on FR4 substrate. Typical values for the resistor (R) are 8-18 Ω. CBL RF In GND RF Out GND GND GND 5 GND 6 2 7 RF input 8 RF In 4 1 VD 3 Function 2 Symbol 1 Terminal R Absolute Maximum Ratings Characteristic Symbol Value Unit Drain Voltage VD 7 V Current ID 150 mA Input Power PIN 20 dBm Operating Temperature TOPT -30 to +100 °C Storage Temperature TSTG -65 to +120 °C Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 2/01A 3