31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 ■ Single Bias Supply Operation (5 V) ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing Description Alpha’s three-stage reactively-matched Ka band GaAs MMIC driver amplifier has a typical P1 dB of 17 dBm with 18 dB associated gain at 35 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, which is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. The amplifier is a self-bias design requiring a single positive drain bias to one of any three bonding sites. All chips are screened for S-parameters prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high gain and power are required. 3.810 0.000 0.000 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 19 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 5 V) Parameter Condition Drain Current Min. IDS Small Signal Gain Noise Symbol Figure1 F= 31–35 GHz G 15 Typ.3 Max. Unit 275 350 mA 19 dB F= 35 GHz NF 10.5 Input Return Loss F= 31–35 GHz RLI -14 -10 Output Return Loss F= 31–35 GHz RLO -16 -10 Output Power at 1 dB Gain Compression F= 35 GHz P1 dB 15 17 Saturated Output Power F= 35 GHz PSAT 16 19 dBm 66 °C/W ΘJC Thermal Resistance2 dB dB dB dBm 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 1/01A 1 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 Typical Performance Data 20 30 18 S21 POUT (dBm) 20 (dB) 10 0 -10 S11 14 12 -20 S22 -30 30 16 31 32 33 34 35 10 -10 36 -8 -6 Frequency (GHz) Bias Arrangement RF IN -2 0 2 4 PIN (dBm) Typical Small Signal Performance S-Parameters (VDS = 5 V) 5V -4 Output Characteristic as a Function of Input Drive Level (F = 35 GHz, VDS = 5 V) Circuit Schematic .01 µF 50 pF RF OUT Detail A VDS For biasing on, adjust VDS from zero to the desired value (4 V–6 V recommended). For biasing off, reverse the biasing on procedure. RF IN 2 SEE DETAIL A Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 1/01A RF OUT