28–40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 ■ 17 dB Typical Small Signal Gain 2.599 2.445 2.183 ■ 3.8 dB Typical Noise Figure at 38 GHz 1.961 ■ Single Bias Supply Operation (4.5 V) Chip Outline 1.560 Features 1.355 1.274 1.267 ■ 0.25 µm Ti/Pd/Au Gates Description Alpha’s four-stage reactively-matched 28–40 GHz GaAs MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.8 dB at 38 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. 0.087 0.124 2.710 2.600 2.146 1.813 1.264 0.000 0.246 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.588 0.000 ■ 100% On-Wafer RF, DC and Noise Figure Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 6 VDC Power In (PIN) 10 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 4.5 V) AA038N1-00 Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain F = 28–40 GHz Noise Figure G 15 Typ.3 Max. Unit 35 50 mA 17 dB F = 38 GHz NF 3.8 4.2 dB Input Return Loss F = 28–40 GHz RLI -10 -6 dB Output Return Loss F = 28–40 GHz RLO -8 -6 F = 38 GHz P1 dB 6 dBm ΘJC 101 °C/W Output Power at 1 dB Gain Compression1 Thermal Resistance2 dB AA038N2-00 Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 17 Typ.3 Max. Unit 35 50 mA F = 37–39.5 GHz G F = 38 GHz NF 3.8 19 4.2 dB dB F = 37–39.5 GHz RLI -14 -6 dB F = 37–39.5 GHz RLO -11 -8 dB F = 38 GHz P1 dB 6 dBm ΘJC 101 °C/W 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 28–40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 Typical Performance Data Bias Arrangement .01 µF 30 VD2 20 50 pF S21 (dB) 10 0 S22 -10 RF IN S11 RF OUT -20 -30 18 20 22 24 26 28 30 32 34 36 38 40 42 .01 µF VD1 50 pF Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 31 11 Gain* 3.0 V, 5.5 V 10 Gain 2.5 V 9 Gain 4.5 V 27 8 25 7 23 21 6 NF 4.5 V 5 NF* 3.0 V, 5.5 V 19 NF 2.5 V 4 Circuit Schematic 29 D Gain (dB) Noise Figure (dB) For biasing on, adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. 17 3 15 2 13 G Detail A 18 20 22 24 26 28 30 32 34 36 38 40 42 Frequency (GHz) VD2 Typical Gain and Noise Figure Performance for Three Bias Conditions *Special Bias: VD1 = 3.0 V, VD2 = 5.5 V RF IN SEE DETAIL A 36 21 34 Gain 19 32 17 30 15 28 13 26 11 24 ID 9 22 7 20 5 G G G D D D D Drain Current (mA) 38 GHz Gain (dB) and 38 GHz Noise Figure (dB) 23 G 18 NF 3 16 1.0 2.0 3.0 4.0 5.0 6.0 VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT VD1