ALPHA AA038N2-00

28–40 GHz GaAs MMIC
Low Noise Amplifier
AA038N1-00, AA038N2-00
■ 17 dB Typical Small Signal Gain
2.599
2.445
2.183
■ 3.8 dB Typical Noise Figure at 38 GHz
1.961
■ Single Bias Supply Operation (4.5 V)
Chip Outline
1.560
Features
1.355
1.274
1.267
■ 0.25 µm Ti/Pd/Au Gates
Description
Alpha’s four-stage reactively-matched 28–40 GHz GaAs
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.8 dB at 38 GHz. The
chip uses Alpha’s proven 0.25 µm low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
0.087
0.124
2.710
2.600
2.146
1.813
1.264
0.000
0.246
■ 100% Visual Inspection to MIL-STD-883
MT 2010
0.588
0.000
■ 100% On-Wafer RF, DC and Noise Figure
Testing
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)
6 VDC
Power In (PIN)
10 dBm
Junction Temperature (TJ)
175°C
Electrical Specifications at 25°C (VDS = 4.5 V)
AA038N1-00
Parameter
Condition
Drain Current
Symbol
Min.
IDS
Small Signal Gain
F = 28–40 GHz
Noise Figure
G
15
Typ.3
Max.
Unit
35
50
mA
17
dB
F = 38 GHz
NF
3.8
4.2
dB
Input Return Loss
F = 28–40 GHz
RLI
-10
-6
dB
Output Return Loss
F = 28–40 GHz
RLO
-8
-6
F = 38 GHz
P1 dB
6
dBm
ΘJC
101
°C/W
Output Power at 1 dB Gain Compression1
Thermal Resistance2
dB
AA038N2-00
Parameter
Condition
Drain Current
Symbol
Min.
IDS
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain
Compression1
Thermal Resistance2
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
17
Typ.3
Max.
Unit
35
50
mA
F = 37–39.5 GHz
G
F = 38 GHz
NF
3.8
19
4.2
dB
dB
F = 37–39.5 GHz
RLI
-14
-6
dB
F = 37–39.5 GHz
RLO
-11
-8
dB
F = 38 GHz
P1 dB
6
dBm
ΘJC
101
°C/W
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
28–40 GHz GaAs MMIC Low Noise Amplifier
AA038N1-00, AA038N2-00
Typical Performance Data
Bias Arrangement
.01 µF
30
VD2
20
50 pF
S21
(dB)
10
0
S22
-10
RF IN
S11
RF OUT
-20
-30
18 20 22 24 26 28 30 32 34 36 38 40 42
.01 µF
VD1
50 pF
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VD = 4.5 V)
31
11
Gain* 3.0 V, 5.5 V
10
Gain 2.5 V
9
Gain 4.5 V
27
8
25
7
23
21
6
NF 4.5 V
5
NF* 3.0 V, 5.5 V
19
NF 2.5 V
4
Circuit Schematic
29
D
Gain (dB)
Noise Figure (dB)
For biasing on, adjust VD from zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.
17
3
15
2
13
G
Detail A
18 20 22 24 26 28 30 32 34 36 38 40 42
Frequency (GHz)
VD2
Typical Gain and Noise Figure
Performance for Three Bias Conditions
*Special Bias: VD1 = 3.0 V, VD2 = 5.5 V
RF IN
SEE
DETAIL
A
36
21
34
Gain
19
32
17
30
15
28
13
26
11
24
ID
9
22
7
20
5
G
G
G
D
D
D
D
Drain Current (mA)
38 GHz Gain (dB) and
38 GHz Noise Figure (dB)
23
G
18
NF
3
16
1.0
2.0
3.0
4.0
5.0
6.0
VD1 and VD2 (V)
Typical Gain and Noise Figure
Performance vs. Drain Bias (VD1 = VD2)
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
RF OUT
VD1