28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Features Chip Outline ■ Dual Bias Supply Operation (4.5 V) 2.370 ■ 2.8 dB Typical Noise Figure at 32 GHz 2.255 ■ 12 dB Typical Small Signal Gain 1.598 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF, DC and Noise Figure Testing ■ 100% Visual Inspection to MIL-STD-883 MT 2010 Description 0.116 2.690 2.417 2.059 1.701 1.343 0.985 0.627 0.269 Alpha’s two-stage balanced 28–36 GHz MMIC low noise amplifier has typical small signal gain of 12 dB with a typical noise figure of 2.6 dB at 32 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. 0.000 0.000 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. AA035N1-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA) Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Max. Unit 70 90 mA F = 28–36 GHz G F = 32 GHz NF 2.8 3.2 dB F = 28–36 GHz RLI -17 -12 dB F = 28–36 GHz RLO -20 -12 dB F = 35 GHz P1 dB 10 dBm ΘJC 50 °C/W Thermal Resistance2 10 Typ.3 12 dB AA035N2-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA) Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain Noise Figure F = 28–36 GHz G 9 Typ.3 Max. Unit 70 90 mA 12 dB F = 32 GHz NF 3.0 3.8 dB Input Return Loss F = 28–36 GHz RLI -17 -12 dB Output Return Loss F = 28–36 GHz RLO -20 -12 F = 35 GHz P1 dB 10 dBm ΘJC 50 °C/W Output Power at 1 dB Gain Compression1 Thermal Resistance2 dB 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 7/00A 1 28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Typical Performance Data 20 14 10 12 100 10 S11 -10 -20 60 4 S22 Noise Figure 40 2 0 S12 -40 20 -2 -50 30 32 34 36 38 80 6 -30 ID -4 -0.5 40 0 -0.4 -0.3 -0.2 -0.1 0 Frequency (GHz) (VG) Typical Small Signal Performance S-Parameters (VD = 4.5 V) Typical 35 GHz Noise Figure and Gain as a Function of Gate Voltage (VG) Absolute Maximum Ratings 5.0 Characteristic 4.5 Noise Figure (dB) Gain 8 (dB) (dB) 0 Drain Current (mA) S21 120 Value Operating Temperature (TC) -55°C to +90°C 4.0 Storage Temperature (TST) -65°C to +150°C 3.5 Bias Voltage (VD) 5.5 VDC Power In (PIN) 16 dBm Junction Temperature (TJ) 175°C 3.0 2.5 2.0 30 32 34 36 38 40 Bias Arrangement .01 µF 50 pF Frequency (GHz) Typical Noise Figure Performance vs. Frequency 50 pF .01 µF VG VD = 4.5 V RF IN RF OUT VG VD = 4.5 V .01 µF 50 pF 50 pF .01 µF For biasing on, adjust VG from zero to the desired value (-0.3 V typically is optimum). Then adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 7/00A 28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00 Circuit Schematic G D Detail A VG G RF IN VD D G D RF OUT SEE DETAIL A G D G D VG VD Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 7/00A 3