DCR1473SY / DCR1473SV DCR1473SY / DCR1473SV Phase Control Thyristor Replaces November 2002 version, DS4652-5.1 DS4652-6.0 October 2003 PACKAGE OUTLINE KEY PARAMETERS VDRM 1200V IT(AV) 4135A ITSM 64000A dVdt* 1000V/µs dI/dt 500A/µs *Higher dV/dt selections available Outline type code: Y Outline type code: V See Package Details for further information. Fig. 1 Package outline VOLTAGE RATINGS Part Number Repetitive Peak Voltages VDRM VRRM Conditions V DCR1473SY12 or DCR1473SV12 1200 1200 Tvj = 0˚ to 125˚C. IDRM = IRRM = 250mA. VDRM, VRRM = 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table. For example: DCR1473SY12 for a 1200V 'Y' outline variant or DCR1473SV12 for a 1200V 'V' outline variant If a lower voltage grade is required, then use VDRM/100 for the grade required e.g.: DCR1473SY10 for a 1000V 'Y' outline variant etc. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR1473SY / DCR1473SV CURRENT RATING Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 4135 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 6495 A Continuous (direct) on-state current - 5700 A 2605 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 4090 A Continuous (direct) on-state current - 3290 A Conditions Max. Units 3190 A IT Half wave resistive load CURRENT RATING Tcase = 80˚C unless stated otherwise. Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 5010 A Continuous (direct) on-state current - 3950 A 1966 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 3090 A Continuous (direct) on-state current - 2410 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR1473SY / DCR1473SV SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 51.0 kA VR = 50% VRRM - 1/4 sine 13.1x 106 A2s 10ms half sine; Tcase = 125oC 64.0 kA VR = 0 20.48 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. dc - 0.0095 o Anode dc - 0.019 o Cathode dc - - o C/W Double side - 0.002 o C/W Single side - 0.004 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -55 125 o Clamping force 38.0 47.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 43.0kN with mounting compound C Virtual junction temperature C C kN 3/9 www.dynexsemi.com DCR1473SY / DCR1473SV DYNAMIC CHARACTERISTICS Symbol Parameter Max. Units 250 mA 1000 V/µs Repetitive 50Hz 250 A/µs Non-repetitive 500 A/µs Conditions Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC, gate open circuit dI/dt Rate of rise of on-state current From 67% VDRM to 1000A Gate source 20V, 10Ω tr = 0.5µs to 1A, Tj = 125oC IRRM/IDRM Threshold voltage At Tvj = 125oC 0.824 V rT On-state slope resistance At Tvj = 125oC 0.066 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω tr = 0.5µs, Tj = 25oC 2.0 µs Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 4.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 400 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PG(PK) Peak gate power See Gate Characteristics curve/table 150 W PG(AV) Mean gate power 10 W 4/9 www.dynexsemi.com DCR1473SY / DCR1473SV CURVES 10000 dc Measured under pulse conditions 4000 1/2 wave 3 phase 6 phase Mean power dissipation - (W) Instantaneous on-state current IT - (A) 8000 Tj = 125˚C 6000 Tj = 25˚C 4000 3000 2000 1000 2000 0 0.5 0 1.0 Instantaneous on-state voltage VT - (V) 0 1.5 1000 2000 3000 Mean on-state current, IT(AV) - (A) Fig. 2 Maximum (limit) on-state characteristics 100 Fig. 3 Power dissipation curves Table gives pulse power PG(PK) in Watts Pulse width Pulse frequency Hz 50 100 400 µs VFGM 150 150 150 100 150 150 125 200 150 150 100 500 150 100 25 1ms 20 10 10ms Gate trigger voltage VGT - (V) 4000 100W 50W 20W 10W 5W 2W Up pe it r lim Tj = 25˚C 99% T = 125˚C j Tj = -40˚C 1 0.1 0.001 r limit Lowe 0.01 1% 0.1 Gate trigger current IGT - (A) 1 10 IFGM Fig. 4 Gate characteristics 5/9 www.dynexsemi.com DCR1473SY / DCR1473SV 0.1000 Thermal impedance - (˚C/W) Single side cooled 0.0100 Double side cooled 0.0010 Conduction Effective Thermal Resistance Junction to case - ˚C/W Single Double Sided Sided d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 0.1 0.0190 0.0200 0.0207 0.0234 0.0095 0.0105 0.0112 0.0139 1.0 10 100 Time - (s) Fig. 5 Maximum (limit) transient thermal impedance - junction to case 120 I2t = Î2 x t 2 80 60 14.0 12.0 40 10.0 I2t 8.0 6.0 20 4.0 I2t value - (A2s x 106) Peak half sine wave on-state current - (kA) 100 2.0 0 1 10 ms 1 2 3 45 10 20 30 0 50 Cycles at 50Hz Duration Fig. 6 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 6/9 www.dynexsemi.com DCR1473SY / DCR1473SV PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode tab Cathode Ø112.5 max Ø73 nom 27.0 25.4 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1100g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.7 Package details 7/9 www.dynexsemi.com DCR1473SY / DCR1473SV PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode tab Cathode Ø112.5 max Ø73 nom 27.0 25.4 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1100g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.8 Package details 8/9 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com