ETC DS2101SV

DS2101SY / DS2101SV
DS2101SY / DS2101SV
Rectifier Diode
Replaces October 2002 version, DS4170-6.0
DS4170-6.1 February 2003
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VRRM 1500V
■ High Surge Capability
IF(AV) 7810A
IFSM
APPLICATIONS
79000A
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
DS2101SY15
Repetitive Peak
Reverse Voltage
VRRM
V
1500
Conditions
VRSM = VRRM + 100V
Outline type code: Y
Outline type code: V
Outline type code: Y or V
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, use part number shown in the Voltage Ratings
selection table. If a lower voltage grade is required, then use
two a digit abbreviation for the grade required (VRRM/100) e.g.:
DS2101SY14 for a 1400V deivce.
If the device is required in the slim 'V' package then substitute
the 'Y' shown in the part number in the Voltage Ratings table for
'V', i.e.:
DS2101SV15
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2101SY / DS2101SV
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
7810
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
12268
A
Continuous (direct) forward current
-
11091
A
5035
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
7909
A
Continuous (direct) forward current
-
6579
A
Conditions
Max.
Units
6630
A
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
10400
A
Continuous (direct) forward current
-
8600
A
4220
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
6630
A
Continuous (direct) forward current
-
5190
A
IF
Half wave resistive load
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DS2101SY / DS2101SV
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 190oC
72.0
kA
VR = 50% VRRM - 1/4 sine
25.9 x 106
A2s
10ms half sine; Tcase = 190oC
79.0
kA
VR = 0
31.2 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Conditions
Min.
Max.
dc
-
0.0095
o
Anode dc
-
0.019
o
Cathode dc
-
0.019
o
C/W
Double side
-
0.002
o
C/W
Single side
-
0.004
o
C/W
Forward (conducting)
-
200
o
Reverse (blocking)
-
190
o
–55
190
o
38
47
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 43kN
with mounting compound
C
Virtual junction temperature
Storage temperature range
Clamping force
C
C
kN
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DS2101SY / DS2101SV
CHARACTERISTICS
Symbol
Conditions
Parameter
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
0.95
V
IRRM
Peak reverse current
At VRRM, Tcase = 190oC
-
100
mA
QS
Total stored charge
IF = 2000A, dIRR/dt = 3A/µs
-
1600
µC
IRM
Peak recovery current
Tcase = 175˚C, VR = 100V
-
90
A
VTO
Threshold voltage
At Tvj = 190˚C
-
0.67
V
Slope resistance
At Tvj = 190˚C
-
0.038
mΩ
rT
CURVES
10000
16000
Measured under pulse conditions
8000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
12000
6000
Tj = 190˚C
Tj = 25˚C
4000
8000
4000
2000
dc
Half wave
3 phase
6 phase
0
0
0.5
1.0
Instantaneous forward voltage, VF -(V)
Fig.2 Maximum (limit) forward characteristics
1.5
0
0
4000
8000
12000
Mean forward current, IF(AV) - (A)
16000
Fig.3 Dissipation curves
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
Where
A = 0.081707
B = 0.100349
C = 5.72 x 10–5
D = –0.00529
These values are valid for Tj = 190˚C for IF 500A to 10000A
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DS2101SY / DS2101SV
100000
IF
175
Conditions:
Tj = 175˚C
VR = 100V
IF = 2000A
QS
I2t = Î2 x t
2
150
dIF/dt
Stored charge, QS - (µC)
10000
125
100
30
75
25
50
I2t
20
25
1000
0.1
1.0
10
Rate of decay of forward current, dIF/dt - (A/µs)
100
15
0
1
10
ms
Fig.4 Total stored charge
1
2 3
5
10
20
I2t value - (A2s x 106)
Peak half sine forward current - (kA)
IRR
10
50
Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 190˚C)
0.1
Thermal impedance - (˚C/W)
Anode side cooled
0.01
Double side cooled
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
0.1
1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
10
Single side
0.019
0.020
0.0207
0.0234
100
Fig.6 Maximum (limit) transient thermal impedance junction to case
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DS2101SY / DS2101SV
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode
37.7
36.0
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 43kN ±10%
Package outline type code: Y
Note:
Some packages may be supplied with gate pins and/or tags.
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DS2101SY / DS2101SV
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
27.0
25.4
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN ±10%
Package outline type code: V
Note:
Some packages may be supplied with gate pins and/or tags.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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