DCR1574SY / DCR1574SV DCR1574SY / DCR1574SV Phase Control Thyristor Replaces July 2001 version, DS4400-4.0 DS4400-5.5 November 2002 PACKAGE OUTLINE Outline type code: Y KEY PARAMETERS VDRM 2800V IT(AV) 3419A ITSM 54500A dVdt 1000V/µs dI/dt 300A/µs Outline type code: V See Package Details for further information. Fig. 1 Package outline VOLTAGE RATINGS Part Number Repetitive Peak Voltages VDRM VRRM Conditions V DCR1574SY28 or DCR1574SV28 2800 2800 Tvj = 0˚ to 125˚C. IDRM = IRRM = 300mA. VDRM, VRRM = 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table. For example: DCR1574SY28 for a 2800V 'Y' outline variant or DCR1574SV28 for a 2800V 'V' outline variant If a lower voltage grade is required, then use VDRM/100 for the grade required e.g.: DCR1574SY26 for a 2600V 'Y' outline variant etc. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/11 www.dynexsemi.com DCR1574SY / DCR1574SV CURRENT RATINGS Tcase = 60˚C unless stated otherwise Symbol Parameter Conditions Max. Units 3419 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 5370 A Continuous (direct) on-state current - 4836 A 2197 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 3451 A Continuous (direct) on-state current - 2857 A Conditions Max. Units 2667 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 4189 A Continuous (direct) on-state current - 3680 A 1680 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 2640 A Continuous (direct) on-state current - 2140 A IT Half wave resistive load 2/11 www.dynexsemi.com DCR1574SY / DCR1574SV SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 43.8 kA VR = 50% VRRM - 1/4 sine 9.59 x 106 A2s 10ms half sine; Tcase = 125oC 54.5 kA VR = 0 14.85 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Conditions Min. Max. dc - 0.0095 o Anode dc - 0.019 o Cathode dc - 0.019 o C/W Double side - 0.002 o C/W Single side - 0.004 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o –55 150 o 45 55 Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 50kN with mounting compound C Virtual junction temperature Storage temperature range Clamping force C C kN 3/11 www.dynexsemi.com DCR1574SY / DCR1574SV DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Peak reverse and off-state current Conditions Max. Units 300 mA 1000 V/µs Repetitive 50Hz 250 A/µs Non-repetitive 500 A/µs At VRRM/VDRM, Tcase = 125oC dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. dI/dt Rate of rise of on-state current From 67% VDRM to 1000A Gate source 20V, 10Ω tr ≤ 0.5µs, Tj = 125oC Threshold voltage At Tvj = 125oC 0.883 V rT On-state slope resistance At Tvj = 125oC 0.11 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω, tr ≤ 0.5µs, Tj = 25oC 2 µs tq Turn-off time VRM = 200V, dIRR/dt = 6A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear 400 µs IL Latching current Tj = 25oC, VD = 5V 1000 mA IH Holding current Tj = 25oC, Rg - k = ∞ 300 mA Max. Units VT(TO) IT = 4000A, tp = 3ms, Tj = 125˚C, GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See figs. 7 and 8, gate characteristics table 150 W PG(AV) Mean gate power 10 W 4/11 www.dynexsemi.com DCR1574SY / DCR1574SV CURVES 9000 3000 Measured under pulse conditions Tj = 125˚C Measured under pulse conditions Tj = 125˚C 8000 Min Max Min Max Instantaneous on-state current, IT - (A) 2500 Instantaneous on-state current, IT - (A) 7000 2000 6000 5000 1500 4000 1000 3000 2000 500 1000 0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous on-state voltage, VT - (V) 1.7 Fig.2 Maximum (limit) on-state characteristics 1.8 0 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 Instantaneous on-state voltage, VT - (V) 1.2 Fig.3 Maximum (limit) on-state characteristics VTM Equation: VTM(max) = A + BIn (IT) + C.IT + D. √IT Where A = 1.328994 B = –0.1381631 C = 3.565973 x 10–6 D = 0.01786171 These values are valid for Tj = 125˚C for IT 500A to 6000A 5/11 www.dynexsemi.com DCR1574SY / DCR1574SV 7000 2400 6000 2000 5000 Power loss - (W) Power loss - (W) 1600 4000 3000 1200 Conduction angle 800 2000 Conduction angle 180° 120° 90° 60° 30° 15° 1000 0 0 500 1000 1500 2000 2500 3000 3500 180° 120° 90° 400 60° 30° 15° 0 4000 0 Mean on-state current, IT(AV) - (A) Fig.4 Sine wave power dissipation curves 500 1000 1500 Mean on-state current, IT(AV) - (A) 2000 Fig.5 Sine wave power dissipation curves 2400 7000 6000 2000 5000 Power Loss - (W) Power loss - (W) 1600 4000 1200 3000 Conduction angle D.C. 180° 120° 2000 1000 0 0 800 Conduction angle D.C. 180° 120° 400 90° 60° 30° 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.6 Square wave power dissipation curves 90° 60° 30° 5000 0 0 500 1000 1500 2000 Mean on-state current, IT(AV) - (A) 2500 Fig.7 Square wave power dissipation curves 6/11 www.dynexsemi.com DCR1574SY / DCR1574SV 4.5 Table gives pulse power PGM in Watts Pulse Width 4 µs 100 200 500 1ms 10ms Gate trigger voltage, Vgt - (V) 3.5 3 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - Upper limit 400 150 125 100 25 - 2.5 Preferred gate drive area Tj = -40°C 2 Tj = 25°C 1.5 Lower limit Tj = 125°C 1 0.5 0 0 0.2 0.4 0.6 Gate trigger current, Igt - (A) 0.8 1 Fig.7 Gate characteristics 12 2W 5W Upper limit 10W 10 20W Gate trigger voltage, Vgt - (V) 50W 8 6 4 Lower limit 2 0 0 2 4 6 Gate trigger current, Igt - (A) 8 10 Fig.8 Gate characteristics 7/11 www.dynexsemi.com DCR1574SY / DCR1574SV 10000 Conditions: IT = 4000A, VR = 600V, Tj = 125˚C, tp = 3ms QS is the total integral stored charge Peak reverse recovery current, IRR - (A) 100000 Max. Stored charge, QS - (µC) 10000 1000 IT Conditions: IT = 4000A, VR = 600V, Tj = 125˚C, tp = 3ms 1000 Max. 100 QS dI/dt 100 0.1 IRR 1 10 Rate of decay of on-state current dI/dt - (A/µs) 10 0.1 100 Fig.9 Stored charge 1 10 Rate of decay of on-state current dI/dt - (A/µs) Fig.10 Reverse recovery current 0.1 100 I2t = Î2 x t 2 Double side cooled 0.001 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 0.1 1 Time - (s) Peak half sinewave on-state current - (kA) 0.01 8 75 7 6 50 5 4 3 25 2 Anode side 0.019 0.020 0.0207 0.0234 10 I2t value - (A2s x 106) Thermal impedance - (˚C/W) Anode side cooled 10 9 I2t Conduction 100 1 100 0 1 10 ms 5 1 10 0 50 Cycles at 50Hz Duration Fig.11 Maximum (limit) transient thermal impedance junction to case Fig.12 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 8/11 www.dynexsemi.com DCR1574SY / DCR1574SV PACKAGE DETAILS For further package information, please contact Customer Service. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode tab Cathode Ø112.5 max Ø73 nom 37.7 36.0 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1600g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: Y Fig.12 Package details 9/11 www.dynexsemi.com DCR1574SY / DCR1574SV PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode tab Cathode Ø112.5 max Ø73 nom 27.0 25.4 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1100g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.12 Package details 10/11 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com