ETC DFM600FXM12-A

DFM600FXM12-A000
DFM600FXM12-A000
Fast Recovery Diode Module
DS5478-1.2 July 2001
FEATURES
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
KEY PARAMETERS
VRRM
VF
(typ)
(max)
IF
(max)
IFM
1200V
1.9V
600A
1200A
■ Isolated Base
■ Dual Diodes Can Be Paralleled for 1200A Rating
■ MMC Baseplate With AlN Substrates
External connection
1(C1)
2(C2)
3(A1)
4(A2)
APPLICATIONS
■ Chopper Diodes
■ Boost and Buck Converters
■ Free-wheel Circuits
■ Snubber Circuits
■ Resonant Converters
■ Induction Heating
■ Multi-level Switch Inverters
External connection
External connection for single 1200A diode application
Fig. 1 Circuit diagram
The DFM600FXM12-A000 is a dual 1200 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
3
1
4
2
ORDERING INFORMATION
Order As:
DFM600FXM12-A000
Note: When ordering, please use the complete part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM600FXM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
Max.
Units
Repetitive peak reverse voltage
Tvj = 125˚C
1200
V
IF
Forward current (per arm)
DC, Tcase = 75˚C, Tvj = 125˚C
600
A
IFM
Max. forward current
Tcase = 110˚C, tp = 1ms
1200
A
I2t
I2t value fuse current rating
VR = 0, tp = 10ms, Tvj = 125˚C
100
kA2s
Pmax
Maximum power dissipation
Tcase = 25˚C, Tvj = 125˚C
2500
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4
kV
Qpd
Partial discharge
IEC1287. V1 = 1200V, V2 = 900V, 50Hz RMS
10
pC
VRRM
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - diode (per arm)
Test Conditions
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
40
˚C/kW
-
-
8
˚C/kW
junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
-
-
-
125
˚C
Storage temperature range
-
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M8
-
-
10
Nm
Screw torque
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DFM600FXM12-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Test Conditions
Parameter
Symbol
Min.
Typ.
Max.
Units
IRM
Peak reverse current
VR = 1200V, Tvj = 125˚C
-
-
10
mA
VF
Forward voltage
IF = 600A
-
1.9
2.2
V
IF = 600A, Tvj = 125˚C
-
2.1
2.4
V
-
20
-
nH
Min.
Typ.
Max.
Units
-
15
-
nH
Test Conditions
Min.
Typ.
Max.
Units
IF = 600A,
-
400
-
A
L
Inductance
-
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Parameter
Symbol
LM
Test Conditions
Module inductance
-
(externally connected in parallel)
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Parameter
Symbol
Irr
Reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 4500/µs,
-
100
-
µC
Erec
Reverse recovery energy
VR = 600V
-
40
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IF = 600A,
-
475
-
A
Tvj = 125˚C unless stated otherwise.
Symbol
Parameter
Irr
Reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 4200/µs,
-
150
-
µC
Erec
Reverse recovery energy
VR = 600V
-
70
-
mJ
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DFM600FXM12-A000
TYPICAL CHARACTERISTICS
1600
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
1400
Forward current, IF - (A)
1200
Tj = 25˚C
Tj = 125˚C
1000
800
600
400
200
0.5
1
1.5
2
2.5
Forward voltage, VF - (V)
3
1
2
3
4
Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068
τi (ms)
0.0063516 1.4746 13.9664 111.7517
1
0.001
0
0
10
3.5
0.01
0.1
Pulse width, tp - (s)
10
1
Fig. 4 Transient thermal impedance
Fig. 2 Diode typical forward characteristics
1000
3000
900
DC forward current, IF - (A)
Power dissipation, Ptot - (W)
800
2000
1000
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
Fig. 5 Power dissipation
140
160
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig. 6DC current rating vs case temperature
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DFM600FXM12-A000
800
Reverse recovery current, Irr - (A)
700
600
500
400
300
200
100
Tj = 125˚C
0
0
200
600
400
800
Reverse voltage, VR - (V)
1000
1200
Fig. 7 RBSOA
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DFM600FXM12-A000
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62
62
15
1
4
2
43.3
57
65
18
57
3
65
15
20
6x Ø7
38
31.5
4x M8
5
140
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Copper terminal thickness, main terminal pins = 1.5 ± 0.1
Nominal weight: 1050g
Module outline type code: F
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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