ETC DFM400PXM33-A

DFM400PXM33-A000
DFM400PXM33-A000
Fast Recovery Diode Module
DS5488-1.3 November 2002
FEATURES
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
KEY PARAMETERS
VRRM
VF
(typ)
(max)
IF
(max)
IFM
3300V
2.5V
400A
800A
■ Isolated Base
■ MMC Baseplate With AlN Substrates
APPLICATIONS
■ Free-wheel Circuits
■ Motor Drives
■ Resonant Converters
2(K2)
1(A2/K1)
3(A1)
■ Multi-level Switch Inverters
The DFM400PXM33-A000 is a series pair 3300 volt,
fast recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
make the device suitable for the latest drive designs
employing pwm and high frequency switching.
Fig. 1 Circuit diagram
These module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM400PXM33-A000
Note: When ordering, please use the complete part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM400PXM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
Max.
Units
Repetitive peak reverse voltage
Tvj = 125˚C
3300
V
IF
Forward current (per arm)
DC, Tcase = 70˚C
400
A
IFM
Max. forward current
Tcase = 115˚C, tp = 1ms
800
A
I2t
I2t value fuse current rating
VR = 0, tp = 10ms, Tvj = 125˚C
80
A2s
Pmax
Maximum power dissipation
Tcase = 25˚C, Tvj = 125˚C
1.85
kW
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6
kV
Qpd
Partial discharge
IEC1287. V1 = 2400V, V2 = 1800V, 50Hz RMS
10
pC
VRRM
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - diode (per arm)
Test Conditions
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
54
˚C/kW
-
-
16
˚C/kW
junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
-
–40
-
125
˚C
Storage temperature range
-
-
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M8
-
-
10
Nm
Screw torque
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DFM400PXM33-A000
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Test Conditions
Parameter
Symbol
Min.
Typ.
Max.
Units
IRM
Peak reverse current
VR = 3300V, Tvj = 125˚C
-
-
30
mA
VF
Forward voltage
IF = 400A
-
2.5
-
V
IF = 400A, Tvj = 125˚C
-
2.5
-
V
-
25
-
nH
Test Conditions
Min.
Typ.
Max.
Units
IF = 400A,
-
400
-
A
L
Inductance
-
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Parameter
Symbol
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 2800A/µs,
-
280
-
µC
Erec
Reverse recovery energy
VR = 1800V
-
300
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IF = 400A,
-
430
-
A
Tvj = 125˚C unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 2000A/µs,
-
450
-
µC
Erec
Reverse recovery energy
VR = 1800V
-
550
-
mJ
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DFM400PXM33-A000
TYPICAL CHARACTERISTICS
800
Tj = 25˚C
Tj = 125˚C
100
Transient thermal impedance, Zth (j-c) - (°C/kW )
700
Forward current, IF - (A)
600
500
400
300
200
10
Ri (˚C/KW)
τi (ms)
100
1
0.001
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
4.0
1
1.4773
0.0843
2
3
4
7.823 11.1257 33.6616
3.7205 33.2138 236.5275
0.1
Pulse width, tp - (s)
10
1
Forward voltage, VF - (V)
Fig. 4 Transient thermal impedance
Fig. 2 Diode typical forward characteristics
700
2000
1800
600
500
1400
DC forward current, IF - (A)
Power Dissipation - Ptot (W)
1600
1200
1000
800
600
400
300
200
400
100
200
0
25
50
75
100
Case temperature, Tcase - (°C)
Fig. 5 Power dissipation
125
150
0
0
25
50
75
100
Case temperature, Tcase - (°C)
125
150
Fig. 6DC current rating vs case temperature
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DFM400PXM33-A000
700
Tj = 125˚C
Reverse recovery current, Irr - (A)
600
500
400
300
200
100
0
0
500
1000
1500
2000
2500
Reverse voltage, VR - (V)
3000
3500
Fig. 7 RBSOA
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DFM400PXM33-A000
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
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