InGaAs-APD/Preamp Receiver FRM5N142DS FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -24 dBm Typical Sensitivity • -7 dBm Overload Power (typ.) • 27 dB Optical Return Loss (ORL) • Integral Thermistor • DC Coupled HBT IC Preamp • Simplifies Receiver Circuit Design APPLICATIONS This 80GHz gain bandwidth product APD detector with HBT preamp is intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other optical fiber systems operating at 10Gb/s. The nominal 10kΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuit. The typical transimpedance (Zt) value if 1000Ω optimizes the gain bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has an electrical differential output. DESCRIPTION The FRM5N142DS incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed butterfly type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. It has differential output with DC coupling. Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer 1 InGaAs-APD/Preamp Receiver FRM5N142DS ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top 0 to +70 °C Supply Voltage Vss -6 to 0 V APD Reverse Voltage VR (Note 1) 0 to VB V APD Reverse Current IR 1.0 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 1,550nm, M=1 Min. 0.65 APD Breakdown Voltage VB ID=10µA 20 Temperature Coefficient of VB γ (Note 2) AC Transimpedance Zt Parameter Limits Typ. 0.7 Unit Max. - A/W 30 35 V 0.03 0.05 0.07 V/°C RL=50Ω, f=10MHz, 800 1000 - Ω BW RL=50Ω, M=10, -3dB from 130MHz 7.0 7.5 - GHz Sensitivity Pr NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value - -24 -23 dBm Maximum Overload Po NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10 -8 -7 - dBm Optical Return Loss ORL 27 - - dB Bandwidth Power Supply Current Iss - - 110 130 mA Power Supply Voltage Vss - -5.46 -5.2 -4.94 V Thermistor Resistance Rtr Vss=0V 9.5 10 10.5 kΩ Thermistor B Constant B - 3,800 3,900 4,000 K Note: (1) VB differs from device to device. VB data is attached to each devices. (2) γ=dVB/dTC 2 This Material Copyrighted by Its Respective Manufacturer Edition 1.0 December 1999 InGaAs-APD/Preamp FRM5N142DS Fig.2 Bit Error Rate Fig. 1 Relative Frequency Response Relative Response (3dB/div) 10-3 Tc = 25°C Vss=-5.2V RL=50Ω Pin=-27dBm λ = 1,550nm 10-4 Bit Error Rate M=10 M=6 M=3 10-5 10-6 70°C 10-7 0°C 10-8 25°C 10-10 1 15 10 5 10-12 Frequency, f (GHz) -30 -28 -26 -24 -22 Received Optical Power (dBm) Fig. 4 Multiplication vs. Photocurrent Fig. 3 Multiplication Characteristics 100 1.0E-02 Vss=-5.2V Ipo=2µA 70°C 0°C 10 25°C 1 Tc=25°C Vss=-5.2V 1.0E-03 Photocurrent (A) Multiplication Factor (M) λ=1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum 1.0E-04 1.0E-05 0.1 0 10 20 30 1.0E-06 40 1 10 20psec/div This Material Copyrighted by Its Respective Manufacturer 30 Reverse Voltage VR(V) Reverse Voltage VR(V) Edition 1.0 December 1999 20 3 40 InGaAs-APD/Preamp Receiver FRM5N142DS Fig. 5 Multiplication vs. Photocurrent 100 Bandwidth (GHz) GB Product 80GHz Tc=25°C Vss=-5.2V RL=50Ω λ=1,550nm Pin=-27dBm 10 1 1 100 10 Multiplication Factor (M) Fig. 6 Input Wave Form 1,550nm, 9.9528Gb/s NRZ, 223-1 PRBS duty and mark density=0.5 20psec/div Fig. 7 Output Wave Form Tc=25°C, RL=50Ω Pin=-26dBm, Vss=-5.2V, M=10 20psec/div Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer 4 InGaAs-APD/Preamp Receiver FRM5N142DS Fig. 8 Output Wave Form Tc=25°C, RL=50Ω, Pin=-20dBm Vss=-5.2V, M=3 20psec/div Fig. 9 Output Wave Form Tc=25°C, RL=50Ω, Pin=-7dBm, Vss=-5.2V, M=3 20psec/div Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer 5 InGaAs-APD/Preamp Receiver FRM5N142DS FRM5N142DS Recommended Circuit 6.8nF 47Ω 0.47µF #16 #14 #13 #12 #11 50Ω #8 (OUT) DC-coupled 50Ω #9 (OUT) PD 20 to 50Ω 220pF #2,7,10 (GND) #1 (VR) #3 (Vss) FRM5N142DS Block Diagram #14 #16 #13 #12 #11 50Ω 50Ω #8 (OUT) #9 (OUT) PD 20 to 50Ω 220pF #2,7,10 (GND) #1 (VR) #3 (Vss) 6 This Material Copyrighted by Its Respective Manufacturer Edition 1.0 December 1999 InGaAs-APD/Preamp Receiver FRM5N142DS UNIT: mm “DS” PACKAGE 5XP1.57=6.35 11.5 12-0.4 29.83 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ø0.9 28.83±0.5 25.83 ø5.0 ø5.4 2-0.2 0.635 2-0.4 3.175 20.83 # 1.27±0.1 3.4 8.7 4-ø2.2 3.8±0.3 9.1 15.45 20.25 6.9 L 3.4 12.7 FUNCTION PD Bias (+) CASE GROUND POWER SUPPLY FOR PREAMP NC NC NC CASE GROUND OUTPUT (-) OUTPUT (+) CASE GROUND DC FEEDBACK OUT FEEDBACK 1 FEEDBACK 2 DC FEEDBACK IN NC THERMISTOR FOR APD NC FOR PIN For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer 7