InGaAs-PIN/Preamp Receiver FRM5J142DS FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -17 dBm Typical Sensitivity • -3 dBm Overload Power (min.) • 27 dB Optical Return Loss (ORL) • DC Coupled HBT IC Preamp • Simplifies Receiver Circuit Design APPLICATIONS This PIN with HBT preamp is intended to function as an optical receiver in 1,310nm and 1,550nm SONET, SDH or the other optical fiber systems operating at 10Gb/s. The typical transimpedance (Zt) value if 1000Ω optimizes the total bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has a high electrical differential output. DESCRIPTION The FRM5J142DS incorporates a high bandwidth InGaAs PIN photo diode, a GaAs HBT IC amplifier in a hermetically sealed butterfly type package. The PIN is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer 1 InGaAs-PIN/Preamp Receiver FRM5J142DS ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top 0 to +70 °C Supply Voltage Vss -6 to 0 V PIN Reverse Voltage VR 0 to 20 V PIN Reverse Current IR 2 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, VR=10V, unless otherwise specified) Min. Limits Typ. 1,550nm 0.75 0.85 - A/W Zt RL=50Ω, F=150MHz 800 1000 - Ω Bandwidth BW RL=50Ω, -3dB from 130MHz 7.0 8.0 - GHz Sensitivity Pr NRZ, 10Gb/s PRBS=223-1, B.E.R.=10-10, - -17 - dBm Maximum Overload Po NRZ, 10Gb/s PRBS=223-1, B.E.R.=10-10, -3 - - dBm Optical Return Loss ORL 27 - - dB Power Supply Current Iss - 110 130 mA Power Supply Voltage Vss -5.46 -5.2 -4.94 V Parameter PIN Responsivity AC Transimpedance Symbol Test Conditions R15 2 This Material Copyrighted by Its Respective Manufacturer Max. Unit Edition 1.0 December 1999 InGaAs-PIN/Preamp Receiver FRM5J142DS Fig.2 Bit Error Rate Fig. 1 Relative Frequency Response 10-3 λ=1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V VR=10V 10-4 Bit Error Rate Relative Response (3dB/div) Tc = 25°C Vss=-5.2V RL=50Ω Pin=-27dBm λ =1,550nm VR=10V 10-5 10-6 70°C 10-7 0°C 10-8 25°C 10-10 1 5 10 15 10-12 -20 -19 -18 Fig. 3 Input Wave Form 1,550nm, 9.9528Gb/s NRZ, 2 -1 PRBS duty and mark density=0.5 23 20psec/div Fig. 4 Output Wave Form Tc=25°C, RL=50Ω Pin=-17dBm, Vss=-5.2V, VR=10V 20psec/div This Material Copyrighted by Its Respective Manufacturer -16 Received Optical Power (dBm) Frequency, f (GHz) Edition 1.0 December 1999 -17 3 InGaAs-PIN/Preamp Receiver FRM5J142DS Fig. 4 Output Wave Form Tc=25°C, RL=50Ω, Pin=-10dBm, Vss=-5.2V, VR=10V 20psec/div Fig. 5 Output Wave Form Tc=25°C, RL=50Ω, Pin=-3dBm, Vss=-5.2V, VR=10V 20psec/div 4 This Material Copyrighted by Its Respective Manufacturer Edition 1.0 December 1999 InGaAs-PIN/Preamp Receiver FRM5J142DS FRM5J142DS Recommended Circuit 6.8nF 47Ω 470nF #16 #14 #13 #12 #11 50Ω #8 (OUT) DC-coupled 50Ω #9 (OUT) PD 20 to 50Ω 220Ω #2,7,9,11 (GND) #1 (VR) #3 (Vss) FRM5J142DS Block Diagram #14 #13 #12 #11 50Ω 50Ω #8 (OUT) #9 (OUT) PD 20 to 50Ω 220Ω #2,7,9,11 (GND) #1 (VR) Edition 1.0 December 1999 This Material Copyrighted by Its Respective Manufacturer #3 (Vss) 5 InGaAs-PIN/Preamp Receiver FRM5J142DS UNIT: mm “DS” PACKAGE 5XP1.57=6.35 11.5 12-0.4 29.83 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ø0.9 28.83±0.5 25.83 20.83 ø5.4 2-0.2 0.635 2-0.4 3.175 ø5.0 # 1.27±0.1 3.4 8.7 4-ø2.2 3.8±0.3 9.1 15.45 20.25 6.9 L 3.4 12.7 FUNCTION PD Bias (+) CASE GROUND POWER SUPPLY FOR PREAMP NC NC NC CASE GROUND OUTPUT (-) OUTPUT (+) CASE GROUND DC FEEDBACK OUT FEEDBACK 1 FEEDBACK 2 DC FEEDBACK IN NC THERMISTOR FOR APD NC FOR PIN For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 6 This Material Copyrighted by Its Respective Manufacturer Edition 1.0 December 1999