FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. GND Product Features • • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested. Applications • • • • • • 4 Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless 1 2 3 RF IN GND RF OUT Function Input / Gate Output / Drain Ground Pin No. 1 3 2, 4 The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Specifications Typical Performance DC Parameter Units Min Typ Max Parameter (6) Units Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2) Thermal Resistance Junction Temperature (3) mA mS V °C / W °C 290 155 -2.1 360 RF Parameter (4) Units Min Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Channel Power (7) MHz dB dB dB dBm dBm dB 915 20.6 -13 -6.0 +27.4 +39.9 2.7 1960 15.7 -26 -9.6 +27.2 +40.4 3.7 2140 14.7 -24 -9.0 +27.2 +39.7 4.3 dBm +21 +20.8 +18.4 Frequency Range Small Signal Gain SS Gain (50 Ω, unmatched) Maximum Stable Gain Output P1dB Output IP3 (5) Noise Figure MHz dB dB dB dBm dBm dB 220 68 160 50 Typ Max 900 20.5 4000 17 21 24 +27.4 +40 2.7 @ -45 dBc ACPR Drain Voltage Drain Current Typical V mA +8 125 6. Typical parameters represent performance in an application circuit. 7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz. 1. 2. 3. 4. Idss is measured with Vgs = 0 V, Vds = 3 V. Pinch-off voltage is measured when Ids = 1.2 mA. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Power RF Input Power (continuous) Drain to Gate Voltage, Vdg Junction Temperature Rating -40 to +85 °C -55 to +125 °C 2.0 W 6 dB above Input P1dB +14 V +220° C Ordering Information Part No. Description FP1189 FP1189-PCB900S FP1189-PCB1900S FP1189-PCB2140S ½ -Watt HFET 870 – 960 MHz Application Circuit 1930 – 1990 MHz Application Circuit 2110 – 2170 MHz Application Circuit Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information Typical Device Data S-Parameters (VDS = +8 V, IDS = 125 mA, T = 25°C, calibrated to device leads) S11 0.8 2. 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.4 0.2 0.6 2 1 .0 -2 -0.8 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 .0 -2 1 3 .4 -0 -0 .6 -0.8 -1.0 6 -0. 6 5 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 2 3 4 Frequency (GHz) 2 -3 .0 1 .4 -0 -3 .0 0 -4. 0 -5. 0 0 2 -0. -4 .0 2 -0. DB(MSG) 5 4 -10.0 DB(|S[2,1]|) 10.0 6 -5. 0 3 5 5.0 10.0 -10.0 0.2 4 10 0 4. 5.0 15 0 3. 4.0 0.2 20 Swp Max 6GHz 6 0. 2. 0 0 3. 5 1.0 1.0 0.8 0.6 6 0. 4 25 S21, MSG (dB) S22 Swp Max 6GHz 0. 4 S21, Maximum Stable Gain vs. Frequency 30 Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) 1.000 -4.52 10.313 176.55 0.002 87.44 0.544 0.988 -21.51 10.120 163.88 0.010 76.64 0.535 0.959 -42.21 9.681 148.45 0.020 64.73 0.520 0.933 -61.23 9.005 134.71 0.028 53.45 0.495 0.895 -78.75 8.270 122.08 0.035 44.25 0.469 0.860 -95.09 7.561 109.58 0.040 34.30 0.447 0.848 -109.61 7.028 99.15 0.044 26.69 0.428 0.821 -122.91 6.408 88.96 0.046 19.57 0.407 0.807 -135.32 5.950 79.64 0.048 13.93 0.400 0.796 -147.01 5.474 70.37 0.049 7.21 0.386 0.785 -157.00 5.087 62.43 0.050 2.99 0.374 0.780 -166.26 4.732 53.97 0.050 -1.58 0.376 0.775 -175.87 4.415 45.54 0.049 -6.79 0.369 0.766 175.78 4.082 38.18 0.049 -9.36 0.368 0.770 167.34 3.843 30.76 0.048 -12.48 0.372 0.771 159.87 3.602 23.91 0.050 -14.97 0.369 0.771 152.07 3.408 16.74 0.050 -17.53 0.374 0.771 145.63 3.241 9.15 0.048 -19.53 0.382 0.772 138.97 3.053 2.49 0.048 -21.27 0.387 0.770 132.07 2.876 -4.50 0.050 -23.00 0.396 0.780 126.56 2.743 -10.47 0.048 -25.08 0.408 0.794 120.21 2.622 -17.28 0.049 -26.64 0.412 0.795 114.22 2.507 -24.43 0.051 -30.44 0.423 0.794 108.27 2.346 -31.21 0.052 -30.16 0.442 0.798 102.86 2.237 -36.95 0.052 -31.18 0.446 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -3.02 -13.77 -27.13 -39.31 -50.54 -60.96 -70.64 -79.82 -88.93 -97.59 -105.24 -113.47 -121.84 -129.77 -137.25 -144.61 -152.17 -161.00 -168.31 -175.08 177.65 170.89 162.41 154.66 147.41 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information Application Circuit: 870 – 960 MHz (FP1189-PCB900S) The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+12 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR -Vgg MHz dB dB dB dBm 870 20.9 -10 -5.2 +27.5 dBm 915 20.6 -13 -6.0 +27.4 +39.9 dB 2.7 dBm 2.7 CAP ID=C10 C=DNP pF Vds = 8 V @ 125 mA CAP ID= C11 C=1e5 pF CAP ID= C 3 C=6 8 p F RES ID=R 1 R=20 Ohm CAP ID=C 8 C=1000 pF CAP ID=C 7 C=68 pF CAP ID= C 2 C=18 pF IN D ID= L4 L= 12 nH CAP ID=C 6 C=18 pF SUBCKT ID= Q1 NET="FP1189" IN D ID= L1 L=47 nH CAP ID= C 1 C=68 pF 2.6 +21 CAP ID=C4 C=100 0 p F POR T P=1 Z=50 Ohm 960 19.8 -10 -7.6 +27.5 RES ID= R 2 R=10 Ohm 2 IN D ID= L3 L= 47 nH RES ID= L2 R=0 Ohm CAP ID =C9 C=68 pF POR T P=2 Z=50 Ohm 1 CAP ID= C13 C=3.9 pF CAP ID= C12 C=DNP pF CAP ID= C 5 C=DNP pF Bill of Materials Ref. Desig. C1, C3, C7, C9 C2, C6 C4, C8 C11 C13 L1, L3 L2 L4 R1 R2 Q1 C5, C12, C10 Value 68 pF 18 pF 1000 pF 0.1 µF 3.9 pF 47 nH 0Ω 12 nH 10 Ω 20 Ω FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Chip resistor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 0603 SOT-89 14 mil GETEKTM ML200DSS (εr = 4.2) The main microstrip line has a line impedance of 50 Ω. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information FP1189-PCB900S Application Circuit Performance Plots S11 vs. Frequency S21 vs. Frequency 21 -5 +85c -10 S21 (dB) -15 -20 20 19 -25 18 -30 17 -40c 860 880 900 920 940 960 860 880 -25 +85c -40c 900 920 940 860 960 5 24 +25c 2 1 20 -40c +25c 920 940 880 OIP3 vs. Temperature 900 920 940 960 IMD products (dBm) 36 32 35 60 22 16 18 14 Output Power 12 10 -8 -4 0 4 Input Power (dBm) 8 12 20 Gain (dB) 18 Output Power (dBm) 26 21 22 23 24 fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C 4 8 12 16 Output Power (dBm) 20 0 24 Output Power / Gain vs. Input Power Gain 20 25 0 26 18 22 16 18 14 Output Power 12 -12 10 -8 -4 0 4 Input Power (dBm) 8 8 12 16 Output Power (dBm) 20 24 12 frequency = 915 MHz, Temp = +85° C 22 30 Gain 14 4 Output Power / Gain vs. Input Power frequency = 915 MHz, Temp = +25° C 22 30 19 30 IMD_High 85 frequency = 915 MHz, Temp = -40° C -12 18 OIP3 vs. Output Power IMD_Low Output Power / Gain vs. Input Power 14 17 35 Temperature (°C) 22 16 45 -80 10 +85 C 40 -60 freq = 915, 916 MHz +12 dBm / tone +25 C Output Channel Power (dBm) -40 38 -15 -60 IMD products vs. Output Power 40 -40 -50 -40 C fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C -20 34 -40 Frequency (MHz) Frequency (MHz) 42 960 -70 860 960 940 OIP3 (dBm) 900 920 freq = 915 MHz 30 26 20 Gain Gain (dB) 880 900 +85c 0 860 880 ACPR vs. Channel Power 3 +85c +85c IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW -30 4 22 +25c Frequency (MHz) ACPR (dBc) 28 26 OIP3 (dBm) -20 Noise Figure vs. Frequency 6 NF (dB) P1dB (dBm) P1dB vs. Frequency Gain (dB) -15 Frequency (MHz) 30 20 -10 -30 Frequency (MHz) -40c +25c Output Power (dBm) S11 (dB) +25c 0 S22 (dB) -40c -5 S22 vs. Frequency 22 18 22 16 18 14 14 Output Power 12 -12 Output Power (dBm) 0 10 -8 -4 0 4 Input Power (dBm) 8 12 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S) The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 MHz dB dB dB dBm (+12 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR 1930 15.8 -26 -9.2 +27.4 1960 15.7 -26 -9.6 +27.2 dBm +40.4 dB 3.7 dBm +20.8 CAP CAP CAP ID= C4 ID= C3 ID= C10 C=33 pF C=DNP pF C= DNP pF 1990 15.5 -24 -9.0 +27.4 Vds = 8 V @ 125 mA CAP ID= C11 C=1e5 pF -Vgg CAP ID=C12 C=DNP pF RES ID=R1 R=100 Ohm PORT P=1 Z=50 Ohm CAP ID=C8 C=DNP pF CAP ID=C13 C=DNP pF CAP ID=C7 C=DNP pF CAP ID=C2 C=DNP pF CAP ID=C6 C=33 pF CAP ID= C1 C=33 pF SUBCKT ID= Q1 NET= "FP1189" IND ID=L1 L=22 nH 2 IND ID=L3 L=22 nH IND ID= L2 L=2.7 nH CAP ID=C9 C=33 pF PORT P=2 Z=50 Ohm 1 CAP ID= C15 C= 1.8 pF RES ID= R2 R=10 Ohm CAP ID= C13 C= DNP pF CAP ID=C5 C=0.5 pF Bill of Materials Ref. Desig. C1, C4, C6, C9 C5 C11 C15 L1, L3 L2 R1 R2 Q1 C2, C3, C7, C8, C10, C12, C13, C14 Value 33 pF 0.5 pF 0.1 µF 1.8 pF 22 nH 2.7 nH 100 Ω 10 Ω FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Size 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89 Do Not Place 14 mil GETEKTM ML200DSS (εr = 4.2) The main microstrip line has a line impedance of 50 Ω. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information FP1189-PCB1900S Application Circuit Performance Plots S11 vs. Frequency S21 vs. Frequency 16 -5 +85C -10 S21 (dB) -15 -20 15 14 -30 1950 1970 1990 1930 1950 5 26 1930 1990 24 +25C 2 -40C +85C +25C 1970 1950 OIP3 vs. Temperature -40 C 1970 16 1990 IMD products (dBm) 36 freq = 1960, 1961 MHz +12 dBm / tone 32 60 IMD_Low 4 18 14 Output Power 8 10 16 0 24 20 24 Gain 22 12 18 10 14 Output Power 10 0 4 8 12 Input Power (dBm) 20 24 frequency = 1960 MHz, Temp = +85° C 30 26 16 14 22 Gain 18 12 10 14 Output Power 8 -4 8 12 16 Output Power (dBm) Output Power / Gain vs. Input Power 26 14 4 18 30 Gain (dB) 12 4 8 12 Input Power (dBm) 20 16 Gain (dB) 22 0 8 12 16 Output Power (dBm) frequency = 1960 MHz, Temp = +25° C 18 Output Power (dBm) 26 23 30 Output Power / Gain vs. Input Power Gain 22 25 0 Output Power / Gain vs. Input Power 16 21 IMD_High Temperature (°C) 30 20 35 85 frequency = 1960 MHz, Temp = -40° C 19 OIP3 vs. Output Power -80 35 18 40 -60 18 17 fundamental frequency = 1960, 1961 MHz; Temp = +25° C 45 -40 38 +85 C OIP3 (dBm) 40 +25 C Output Channel Power (dBm) fundamental frequency = 1960, 1961 MHz; Temp = +25° C -20 10 -60 IMD products vs. Output Power 42 -15 -50 Frequency (MHz) Frequency (MHz) -40 -40 -70 1930 1990 1990 freq = 1960 MHz +85C 0 1950 1970 ACPR vs. Channel Power 3 20 1930 1950 +85C IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW -30 1 +25C Frequency (MHz) 4 22 OIP3 (dBm) 1970 ACPR (dBc) 28 -40C -40C Noise Figure vs. Frequency 6 NF (dB) P1dB (dBm) P1dB vs. Frequency Gain (dB) +85C Frequency (MHz) 30 -4 +25C -30 Frequency (MHz) 10 -20 12 1930 14 -15 -25 -40C 34 -10 13 -25 Output Power (dBm) S11 (dB) +25C 0 S22 (dB) -40C -5 S22 vs. Frequency 17 Output Power (dBm) 0 16 20 8 10 -4 0 4 8 12 Input Power (dBm) 16 20 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information Application Circuit: 2110 – 2170 MHz (FP1189-PCB2140S) The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 MHz dB dB dB dBm dBm (+12 dBm / tone, 1 MHz spacing) Noise Figure W-CDMA Channel Power RES ID=R1 R =100 Ohm PORT P=1 Z=50 Ohm CAP ID=C1 C=22 pF 2140 14.7 -24 -9.0 +27.2 2170 14.7 -24 -9.8 +26.8 +39.7 dB 4.2 dBm @ -45 dBc ACPR -Vgg 2110 14.7 -24 -7.6 +27.1 4.3 4.2 +18.4 CAP ID=C3 C=33 pF Vds = 8 V @ 125 mA CAP ID=C8 C=1e5 pF C AP ID=C11 C=DNP pF CAP ID=C7 C=22 pF C AP ID=C2 C=DNP pF CAP ID=C6 C=DNP pF IND ID=L1 L=18 nH SUBCKT ID=Q1 NET="FP1189" 2 RES ID=R2 R=10 Ohm IND ID=L2 L=18 nH I ND ID=L3 L=2.7 nH CAP ID=C9 C=22 pF PORT P=2 Z=50 Ohm 1 CAP ID=C10 C=1.5 pF CAP ID=C5 C=0.5 pF CAP ID=C4 C=DNP pF Bill of Materials Ref. Desig. C1, C7, C9 C3 C5 C8 C10 L1, L2 L3 R1 R2 Q1 C2, C4, C6, C11 Value 22 pF 33 pF 0.5 pF 0.1 µF 1.5 pF 18 nH 2.7 nH 100 Ω 10 Ω FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip resistor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0805 0603 1206 0603 0603 0603 0603 0603 SOT-89 14 mil GETEKTM ML200DSS (εr = 4.2) The main microstrip line has a line impedance of 50 Ω. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information FP1189-PCB2140S Application Circuit Performance Plots S11 vs. Frequency S21 vs. Frequency 15 -5 +85c -10 S21 (dB) -15 -20 14 13 -30 -20 +25c +85c 11 2110 2130 2150 2170 2110 2130 2150 2110 2170 P1dB vs. Frequency Noise Figure vs. Frequency -40 ACPR (dBc) 5 NF (dB) 4 3 2 1 +25C +85C -40c 20 2150 2110 2170 OIP3 vs. Temperature 2130 40 freq = 2140, 2141 MHz +12 dBm / tone 2170 60 22 10 18 85 14 Output Power 4 22 10 18 14 Output Power 6 10 20 Output Power (dBm) 12 17 18 19 20 30 0 4 8 12 16 Output Power (dBm) 20 frequency = 2140 MHz, Temp = +85° C 30 26 14 Gain 12 22 18 10 IMD_Low 8 14 Output Power IMD_High -80 6 0 4 8 12 16 Output Power (dBm) 24 Output Power / Gain vs. Input Power 16 -40 -60 21 35 20 fundamental frequency = 2140, 2141 MHz; Temp = +25° C -20 IMD products (dBm) 26 Gain 8 12 16 Input Power (dBm) 8 12 16 Input Power (dBm) 16 25 10 0 15 40 Gain (dB) 30 14 4 14 fundamental frequency = 1960, 1961 MHz; Temp = +25° C IMD products vs. Output Power frequency = 2140 MHz, Temp = -40° C +85 C OIP3 vs. Output Power 12 Output Power / Gain vs. Input Power 16 13 45 30 6 35 +25 C Output Channel Power (dBm) 26 Temperature (°C) Gain (dB) -40 C Gain 8 32 0 2150 frequency = 2140 MHz, Temp = +25° C Gain (dB) 36 8 -60 +85c 14 38 10 -55 Output Power / Gain vs. Input Power 16 -15 -50 Frequency (MHz) 42 -40 -45 OIP3 (dBm) 2130 freq = 2140 MHz -65 Frequency (MHz) 34 +25c 0 2110 2170 ACPR vs. Channel Power 28 22 2150 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset -35 24 +85c Frequency (MHz) 6 26 +25c 2130 Frequency (MHz) 30 -40C -40c -30 Frequency (MHz) P1dB (dBm) -15 -25 -40c OIP3 (dBm) -10 12 -25 Output Power (dBm) S11 (dB) +25c 0 S22 (dB) -40c -5 S22 vs. Frequency 16 Output Power (dBm) 0 20 24 10 0 4 8 12 16 Input Power (dBm) 20 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Product Information Application Note: Constant-Current Active-Biasing Special attention should be taken to properly bias the FP1189. Power supply sequencing is required to prevent the device from operating at 100% Idss for a prolonged period of time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be “first on and last off.” With a negative gate voltage present, the drain voltage can then be applied to the device. The gate voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional active-bias current mirror is recommended for use with the application circuits shown in this datasheet. Generally in a laboratory environment, the gate voltage is adjusted until the drain draws the recommended operating current. The gate voltage required can vary slightly from device to device because of device pinchoff variation, while also varying slightly over temperature. The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP1189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point. With the implementation of the circuit, lower P1dB values may be measured for a Class-AB amplifier, where the device will attempt to source more drain current while the circuit tries to provide a constant drain current. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the amplifier circuit, as shown the diagram. Any required matching circuitry remains the same, although it is not shown in the diagram. This recommended active-bias constant-current circuit adds 7 components to the parts count for implementation, but should cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1, R3, R4, R5, $0.024 for R2, and $0.0085 for C1). +Vdd R1 R2 U1 C1 .01 µF 4 Rohm UMT1N 1 2 5 3 6 R4 1 kΩ R3 R5 RF OUT RF IN M.N. -Vgg DUT M.N. HFET Application Circuit Parameter Pos Supply, Vdd Neg Supply, Vgg Vds Ids R1 R2 R3 R4 R5 FP1189 +8 V -5 V +7.75 V 125 mA 62 Ω 2.0 Ω 1.8 kΩ 1 kΩ 1 kΩ Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter-to-base junction of the two PNP transistors. As a 1st order approximation, this is achieved by using matched transistors with approximately the same Ibe current. Thus the transistor emitter voltage adjusts the HFET gate voltage so that the device draws a constant current, regardless of the temperature. A Rohm dual transistor - UMT1N - is recommended for cost, minimal board space requirements, and to minimize the variation between the two transistors. Minimizing the variability between the base-to-emitter junctions allow more accuracy in setting the current draw. More details can be found in a separate application note “Active-bias Constant-current Source Recommended for HFETs” found on the WJ website. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003 FP1189 The Communications Edge TM ½-Watt HFET Outline Drawing Product Information Product Marking The component will be marked with an “FP1189” designator with a four- or five-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part is located on the website in the “Application Notes” section. ESD / MSL Information Land Pattern ESD Classification: Value: Test: Standard: Class 1B Passes at 800 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Classification: Value: Test: Standard: Class IV Passes at 2000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 3 JEDEC Standard J-STD-020A Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com June 2003