ETC FP1189

FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Product Description
Functional Diagram
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a
drain bias of +8 V and 125 mA to achieve +40 dBm
output IP3 performance and an output power of +27
dBm at 1-dB compression, while providing 20.5 dB
gain at 900 MHz.
GND
Product Features
•
•
•
•
•
•
•
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
MTTF >100 Years
SOT-89 SMT Package
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP1189 has an associated MTTF
of greater than 100 years at a mounting temperature
of 85°C. All devices are 100% RF & DC tested.
Applications
•
•
•
•
•
•
4
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
1
2
3
RF IN
GND
RF OUT
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high efficiency are required.
Specifications
Typical Performance
DC Parameter
Units Min
Typ
Max
Parameter (6)
Units
Saturated Drain Current, Idss (1)
Transconductance, Gm
Pinch Off Voltage, Vp (2)
Thermal Resistance
Junction Temperature (3)
mA
mS
V
°C / W
°C
290
155
-2.1
360
RF Parameter (4)
Units Min
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Channel Power (7)
MHz
dB
dB
dB
dBm
dBm
dB
915
20.6
-13
-6.0
+27.4
+39.9
2.7
1960
15.7
-26
-9.6
+27.2
+40.4
3.7
2140
14.7
-24
-9.0
+27.2
+39.7
4.3
dBm
+21
+20.8
+18.4
Frequency Range
Small Signal Gain
SS Gain (50 Ω, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (5)
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
220
68
160
50
Typ
Max
900
20.5
4000
17
21
24
+27.4
+40
2.7
@ -45 dBc ACPR
Drain Voltage
Drain Current
Typical
V
mA
+8
125
6. Typical parameters represent performance in an application circuit.
7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
1.
2.
3.
4.
Idss is measured with Vgs = 0 V, Vds = 3 V.
Pinch-off voltage is measured when Ids = 1.2 mA.
The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in
a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, Vdg
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
2.0 W
6 dB above Input P1dB
+14 V
+220° C
Ordering Information
Part No.
Description
FP1189
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
½ -Watt HFET
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Typical Device Data
S-Parameters (VDS = +8 V, IDS = 125 mA, T = 25°C, calibrated to device leads)
S11
0.8
2.
0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.4
0.2
0.6
2
1
.0
-2
-0.8
Swp Min
0.05GHz
Swp Min
0.05GHz
-1.0
.0
-2
1
3
.4
-0
-0
.6
-0.8
-1.0
6
-0.
6
5
0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
2
3
4
Frequency (GHz)
2
-3
.0
1
.4
-0
-3
.0
0
-4.
0
-5.
0
0
2
-0.
-4
.0
2
-0.
DB(MSG)
5
4
-10.0
DB(|S[2,1]|)
10.0
6
-5.
0
3
5
5.0
10.0
-10.0
0.2
4
10
0
4.
5.0
15
0
3.
4.0
0.2
20
Swp Max
6GHz
6
0.
2.
0
0
3.
5
1.0
1.0
0.8
0.6
6
0.
4
25
S21, MSG (dB)
S22
Swp Max
6GHz
0.
4
S21, Maximum Stable Gain vs. Frequency
30
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines.
The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device.
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
1.000
-4.52
10.313
176.55
0.002
87.44
0.544
0.988
-21.51
10.120
163.88
0.010
76.64
0.535
0.959
-42.21
9.681
148.45
0.020
64.73
0.520
0.933
-61.23
9.005
134.71
0.028
53.45
0.495
0.895
-78.75
8.270
122.08
0.035
44.25
0.469
0.860
-95.09
7.561
109.58
0.040
34.30
0.447
0.848
-109.61
7.028
99.15
0.044
26.69
0.428
0.821
-122.91
6.408
88.96
0.046
19.57
0.407
0.807
-135.32
5.950
79.64
0.048
13.93
0.400
0.796
-147.01
5.474
70.37
0.049
7.21
0.386
0.785
-157.00
5.087
62.43
0.050
2.99
0.374
0.780
-166.26
4.732
53.97
0.050
-1.58
0.376
0.775
-175.87
4.415
45.54
0.049
-6.79
0.369
0.766
175.78
4.082
38.18
0.049
-9.36
0.368
0.770
167.34
3.843
30.76
0.048
-12.48
0.372
0.771
159.87
3.602
23.91
0.050
-14.97
0.369
0.771
152.07
3.408
16.74
0.050
-17.53
0.374
0.771
145.63
3.241
9.15
0.048
-19.53
0.382
0.772
138.97
3.053
2.49
0.048
-21.27
0.387
0.770
132.07
2.876
-4.50
0.050
-23.00
0.396
0.780
126.56
2.743
-10.47
0.048
-25.08
0.408
0.794
120.21
2.622
-17.28
0.049
-26.64
0.412
0.795
114.22
2.507
-24.43
0.051
-30.44
0.423
0.794
108.27
2.346
-31.21
0.052
-30.16
0.442
0.798
102.86
2.237
-36.95
0.052
-31.18
0.446
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-3.02
-13.77
-27.13
-39.31
-50.54
-60.96
-70.64
-79.82
-88.93
-97.59
-105.24
-113.47
-121.84
-129.77
-137.25
-144.61
-152.17
-161.00
-168.31
-175.08
177.65
170.89
162.41
154.66
147.41
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Application Circuit: 870 – 960 MHz (FP1189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 125 mA, 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+12 dBm / tone, 1 MHz spacing)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
-Vgg
MHz
dB
dB
dB
dBm
870
20.9
-10
-5.2
+27.5
dBm
915
20.6
-13
-6.0
+27.4
+39.9
dB
2.7
dBm
2.7
CAP
ID=C10
C=DNP pF
Vds = 8 V @ 125 mA
CAP
ID= C11
C=1e5 pF
CAP
ID= C 3
C=6 8 p F
RES
ID=R 1
R=20 Ohm
CAP
ID=C 8
C=1000 pF
CAP
ID=C 7
C=68 pF
CAP
ID= C 2
C=18 pF
IN D
ID= L4
L= 12 nH
CAP
ID=C 6
C=18 pF
SUBCKT
ID= Q1
NET="FP1189"
IN D
ID= L1
L=47 nH
CAP
ID= C 1
C=68 pF
2.6
+21
CAP
ID=C4
C=100 0 p F
POR T
P=1
Z=50 Ohm
960
19.8
-10
-7.6
+27.5
RES
ID= R 2
R=10 Ohm
2
IN D
ID= L3
L= 47 nH
RES
ID= L2
R=0 Ohm
CAP
ID =C9
C=68 pF
POR T
P=2
Z=50 Ohm
1
CAP
ID= C13
C=3.9 pF
CAP
ID= C12
C=DNP pF
CAP
ID= C 5
C=DNP pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9
C2, C6
C4, C8
C11
C13
L1, L3
L2
L4
R1
R2
Q1
C5, C12, C10
Value
68 pF
18 pF
1000 pF
0.1 µF
3.9 pF
47 nH
0Ω
12 nH
10 Ω
20 Ω
FP1189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Chip resistor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 0.5W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
FP1189-PCB900S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
21
-5
+85c
-10
S21 (dB)
-15
-20
20
19
-25
18
-30
17
-40c
860
880
900
920
940
960
860
880
-25
+85c
-40c
900
920
940
860
960
5
24
+25c
2
1
20
-40c
+25c
920
940
880
OIP3 vs. Temperature
900
920
940
960
IMD products (dBm)
36
32
35
60
22
16
18
14
Output Power
12
10
-8
-4
0
4
Input Power (dBm)
8
12
20
Gain (dB)
18
Output Power (dBm)
26
21
22
23
24
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
4
8
12
16
Output Power (dBm)
20
0
24
Output Power / Gain vs. Input Power
Gain
20
25
0
26
18
22
16
18
14
Output Power
12
-12
10
-8
-4
0
4
Input Power (dBm)
8
8
12
16
Output Power (dBm)
20
24
12
frequency = 915 MHz, Temp = +85° C
22
30
Gain
14
4
Output Power / Gain vs. Input Power
frequency = 915 MHz, Temp = +25° C
22
30
19
30
IMD_High
85
frequency = 915 MHz, Temp = -40° C
-12
18
OIP3 vs. Output Power
IMD_Low
Output Power / Gain vs. Input Power
14
17
35
Temperature (°C)
22
16
45
-80
10
+85 C
40
-60
freq = 915, 916 MHz
+12 dBm / tone
+25 C
Output Channel Power (dBm)
-40
38
-15
-60
IMD products vs. Output Power
40
-40
-50
-40 C
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
-20
34
-40
Frequency (MHz)
Frequency (MHz)
42
960
-70
860
960
940
OIP3 (dBm)
900
920
freq = 915 MHz
30
26
20
Gain
Gain (dB)
880
900
+85c
0
860
880
ACPR vs. Channel Power
3
+85c
+85c
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
-30
4
22
+25c
Frequency (MHz)
ACPR (dBc)
28
26
OIP3 (dBm)
-20
Noise Figure vs. Frequency
6
NF (dB)
P1dB (dBm)
P1dB vs. Frequency
Gain (dB)
-15
Frequency (MHz)
30
20
-10
-30
Frequency (MHz)
-40c
+25c
Output Power (dBm)
S11 (dB)
+25c
0
S22 (dB)
-40c
-5
S22 vs. Frequency
22
18
22
16
18
14
14
Output Power
12
-12
Output Power (dBm)
0
10
-8
-4
0
4
Input Power (dBm)
8
12
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 125 mA, 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
MHz
dB
dB
dB
dBm
(+12 dBm / tone, 1 MHz spacing)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
1930
15.8
-26
-9.2
+27.4
1960
15.7
-26
-9.6
+27.2
dBm
+40.4
dB
3.7
dBm
+20.8
CAP
CAP
CAP
ID= C4
ID= C3
ID= C10
C=33 pF C=DNP pF C= DNP pF
1990
15.5
-24
-9.0
+27.4
Vds = 8 V @ 125 mA
CAP
ID= C11
C=1e5 pF
-Vgg
CAP
ID=C12
C=DNP pF
RES
ID=R1
R=100 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C8
C=DNP pF
CAP
ID=C13
C=DNP pF
CAP
ID=C7
C=DNP pF
CAP
ID=C2
C=DNP pF
CAP
ID=C6
C=33 pF
CAP
ID= C1
C=33 pF
SUBCKT
ID= Q1
NET= "FP1189"
IND
ID=L1
L=22 nH
2
IND
ID=L3
L=22 nH
IND
ID= L2
L=2.7 nH
CAP
ID=C9
C=33 pF
PORT
P=2
Z=50 Ohm
1
CAP
ID= C15
C= 1.8 pF
RES
ID= R2
R=10 Ohm
CAP
ID= C13
C= DNP pF
CAP
ID=C5
C=0.5 pF
Bill of Materials
Ref. Desig.
C1, C4, C6, C9
C5
C11
C15
L1, L3
L2
R1
R2
Q1
C2, C3, C7, C8,
C10, C12, C13, C14
Value
33 pF
0.5 pF
0.1 µF
1.8 pF
22 nH
2.7 nH
100 Ω
10 Ω
FP1189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 0.5W HFET
Size
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
Do Not Place
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
FP1189-PCB1900S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
16
-5
+85C
-10
S21 (dB)
-15
-20
15
14
-30
1950
1970
1990
1930
1950
5
26
1930
1990
24
+25C
2
-40C
+85C
+25C
1970
1950
OIP3 vs. Temperature
-40 C
1970
16
1990
IMD products (dBm)
36
freq = 1960, 1961 MHz
+12 dBm / tone
32
60
IMD_Low
4
18
14
Output Power
8
10
16
0
24
20
24
Gain
22
12
18
10
14
Output Power
10
0
4
8
12
Input Power (dBm)
20
24
frequency = 1960 MHz, Temp = +85° C
30
26
16
14
22
Gain
18
12
10
14
Output Power
8
-4
8
12
16
Output Power (dBm)
Output Power / Gain vs. Input Power
26
14
4
18
30
Gain (dB)
12
4
8
12
Input Power (dBm)
20
16
Gain (dB)
22
0
8
12
16
Output Power (dBm)
frequency = 1960 MHz, Temp = +25° C
18
Output Power (dBm)
26
23
30
Output Power / Gain vs. Input Power
Gain
22
25
0
Output Power / Gain vs. Input Power
16
21
IMD_High
Temperature (°C)
30
20
35
85
frequency = 1960 MHz, Temp = -40° C
19
OIP3 vs. Output Power
-80
35
18
40
-60
18
17
fundamental frequency = 1960, 1961 MHz; Temp = +25° C
45
-40
38
+85 C
OIP3 (dBm)
40
+25 C
Output Channel Power (dBm)
fundamental frequency = 1960, 1961 MHz; Temp = +25° C
-20
10
-60
IMD products vs. Output Power
42
-15
-50
Frequency (MHz)
Frequency (MHz)
-40
-40
-70
1930
1990
1990
freq = 1960 MHz
+85C
0
1950
1970
ACPR vs. Channel Power
3
20
1930
1950
+85C
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
-30
1
+25C
Frequency (MHz)
4
22
OIP3 (dBm)
1970
ACPR (dBc)
28
-40C
-40C
Noise Figure vs. Frequency
6
NF (dB)
P1dB (dBm)
P1dB vs. Frequency
Gain (dB)
+85C
Frequency (MHz)
30
-4
+25C
-30
Frequency (MHz)
10
-20
12
1930
14
-15
-25
-40C
34
-10
13
-25
Output Power (dBm)
S11 (dB)
+25C
0
S22 (dB)
-40C
-5
S22 vs. Frequency
17
Output Power (dBm)
0
16
20
8
10
-4
0
4
8
12
Input Power (dBm)
16
20
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Application Circuit: 2110 – 2170 MHz (FP1189-PCB2140S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 125 mA, 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
MHz
dB
dB
dB
dBm
dBm
(+12 dBm / tone, 1 MHz spacing)
Noise Figure
W-CDMA Channel Power
RES
ID=R1
R =100 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=22 pF
2140
14.7
-24
-9.0
+27.2
2170
14.7
-24
-9.8
+26.8
+39.7
dB
4.2
dBm
@ -45 dBc ACPR
-Vgg
2110
14.7
-24
-7.6
+27.1
4.3
4.2
+18.4
CAP
ID=C3
C=33 pF
Vds = 8 V @ 125 mA
CAP
ID=C8
C=1e5 pF
C AP
ID=C11
C=DNP pF
CAP
ID=C7
C=22 pF
C AP
ID=C2
C=DNP pF
CAP
ID=C6
C=DNP pF
IND
ID=L1
L=18 nH
SUBCKT
ID=Q1
NET="FP1189"
2
RES
ID=R2
R=10 Ohm
IND
ID=L2
L=18 nH
I ND
ID=L3
L=2.7 nH
CAP
ID=C9
C=22 pF
PORT
P=2
Z=50 Ohm
1
CAP
ID=C10
C=1.5 pF
CAP
ID=C5
C=0.5 pF
CAP
ID=C4
C=DNP pF
Bill of Materials
Ref. Desig.
C1, C7, C9
C3
C5
C8
C10
L1, L2
L3
R1
R2
Q1
C2, C4, C6, C11
Value
22 pF
33 pF
0.5 pF
0.1 µF
1.5 pF
18 nH
2.7 nH
100 Ω
10 Ω
FP1189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip resistor
Chip resistor
Chip resistor
WJ 0.5W HFET
Do Not Place
Size
0603
0805
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
FP1189-PCB2140S Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
15
-5
+85c
-10
S21 (dB)
-15
-20
14
13
-30
-20
+25c
+85c
11
2110
2130
2150
2170
2110
2130
2150
2110
2170
P1dB vs. Frequency
Noise Figure vs. Frequency
-40
ACPR (dBc)
5
NF (dB)
4
3
2
1
+25C
+85C
-40c
20
2150
2110
2170
OIP3 vs. Temperature
2130
40
freq = 2140, 2141 MHz
+12 dBm / tone
2170
60
22
10
18
85
14
Output Power
4
22
10
18
14
Output Power
6
10
20
Output Power (dBm)
12
17
18
19
20
30
0
4
8
12
16
Output Power (dBm)
20
frequency = 2140 MHz, Temp = +85° C
30
26
14
Gain
12
22
18
10
IMD_Low
8
14
Output Power
IMD_High
-80
6
0
4
8
12
16
Output Power (dBm)
24
Output Power / Gain vs. Input Power
16
-40
-60
21
35
20
fundamental frequency = 2140, 2141 MHz; Temp = +25° C
-20
IMD products (dBm)
26
Gain
8
12
16
Input Power (dBm)
8
12
16
Input Power (dBm)
16
25
10
0
15
40
Gain (dB)
30
14
4
14
fundamental frequency = 1960, 1961 MHz; Temp = +25° C
IMD products vs. Output Power
frequency = 2140 MHz, Temp = -40° C
+85 C
OIP3 vs. Output Power
12
Output Power / Gain vs. Input Power
16
13
45
30
6
35
+25 C
Output Channel Power (dBm)
26
Temperature (°C)
Gain (dB)
-40 C
Gain
8
32
0
2150
frequency = 2140 MHz, Temp = +25° C
Gain (dB)
36
8
-60
+85c
14
38
10
-55
Output Power / Gain vs. Input Power
16
-15
-50
Frequency (MHz)
42
-40
-45
OIP3 (dBm)
2130
freq = 2140 MHz
-65
Frequency (MHz)
34
+25c
0
2110
2170
ACPR vs. Channel Power
28
22
2150
3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset
-35
24
+85c
Frequency (MHz)
6
26
+25c
2130
Frequency (MHz)
30
-40C
-40c
-30
Frequency (MHz)
P1dB (dBm)
-15
-25
-40c
OIP3 (dBm)
-10
12
-25
Output Power (dBm)
S11 (dB)
+25c
0
S22 (dB)
-40c
-5
S22 vs. Frequency
16
Output Power (dBm)
0
20
24
10
0
4
8
12
16
Input Power (dBm)
20
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Product Information
Application Note: Constant-Current Active-Biasing
Special attention should be taken to properly bias the FP1189.
Power supply sequencing is required to prevent the device from
operating at 100% Idss for a prolonged period of time and possibly
causing damage to the device. It is recommended that for the safest
operation, the negative supply be “first on and last off.” With a
negative gate voltage present, the drain voltage can then be applied
to the device. The gate voltage can then be adjusted to have the
device be used at the proper quiescent bias condition.
An optional active-bias current mirror is recommended for use with
the application circuits shown in this datasheet. Generally in a
laboratory environment, the gate voltage is adjusted until the drain
draws the recommended operating current. The gate voltage
required can vary slightly from device to device because of device
pinchoff variation, while also varying slightly over temperature.
The active-bias circuit, shown on the right, uses dual PNP transistors
to provide a constant drain current into the FP1189, while also
eliminating the effects of pinchoff variation. This configuration is
best suited for applications where the intended output power level of
the amplifier is backed off at least 6 dB away from its compression
point. With the implementation of the circuit, lower P1dB values
may be measured for a Class-AB amplifier, where the device will
attempt to source more drain current while the circuit tries to provide
a constant drain current. The circuit should be connected directly in
line with where the voltage supplies would be normally connected
with the amplifier circuit, as shown the diagram. Any required
matching circuitry remains the same, although it is not shown in the
diagram. This recommended active-bias constant-current circuit
adds 7 components to the parts count for implementation, but should
cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1,
R3, R4, R5, $0.024 for R2, and $0.0085 for C1).
+Vdd
R1
R2
U1
C1
.01 µF
4 Rohm UMT1N 1
2
5
3
6
R4
1 kΩ
R3
R5
RF OUT
RF IN
M.N.
-Vgg
DUT
M.N.
HFET Application Circuit
Parameter
Pos Supply, Vdd
Neg Supply, Vgg
Vds
Ids
R1
R2
R3
R4
R5
FP1189
+8 V
-5 V
+7.75 V
125 mA
62 Ω
2.0 Ω
1.8 kΩ
1 kΩ
1 kΩ
Temperature compensation is achieved by tracking the voltage
variation with the temperature of the emitter-to-base junction of the
two PNP transistors. As a 1st order approximation, this is achieved
by using matched transistors with approximately the same Ibe
current. Thus the transistor emitter voltage adjusts the HFET gate
voltage so that the device draws a constant current, regardless of the
temperature. A Rohm dual transistor - UMT1N - is recommended
for cost, minimal board space requirements, and to minimize the
variation between the two transistors. Minimizing the variability
between the base-to-emitter junctions allow more accuracy in setting
the current draw. More details can be found in a separate application
note “Active-bias Constant-current Source Recommended for
HFETs” found on the WJ website.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003
FP1189
The Communications Edge TM
½-Watt HFET
Outline Drawing
Product Information
Product Marking
The component will be marked with an “FP1189”
designator with a four- or five-digit alphanumeric lot
code on the top surface of the package. Tape and reel
specifications for this part is located on the website in
the “Application Notes” section.
ESD / MSL Information
Land Pattern
ESD Classification:
Value:
Test:
Standard:
Class 1B
Passes at 800 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Classification:
Value:
Test:
Standard:
Class IV
Passes at 2000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating:
Standard:
Level 3
JEDEC Standard J-STD-020A
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC
board in the region where the board contacts the
heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
June 2003