AH215 The Communications Edge TM 1 Watt, High Linearity HBT Amplifier Product Features Product Description • 400 – 2300 MHz • +31.5 dBm P1dB • +46 dBm Output IP3 • 18 dB Gain @ 900 MHz • Single Positive Supply (+5 V) • SOIC-8 SMT Package • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested. Specifications (1) Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power @ -45 dBc ACPR, 1960MHz W-CDMA Channel Power @ -45 dBc ACPR, 2140 MHz Operating Current Range , Icc (3) Device Voltage, Vcc Functional Diagram The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply. Applications Parameters Product Information 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (4) Units Min MHz dB dB dB dBm dBm dB 10 +29 +43.8 Typ Max 2140 11 18 8 +31.5 +45 6.3 Parameters Units Frequency S21 – Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR dBm +26 dBm +23 W-CDMA Channel Power @ -45 dBc ACPR mA V 400 450 5 500 Noise Figure Supply Bias Typical MHz dB dB dB dBm dBm 900 18 -13 -7 +31 +46 1960 12 -11 -10 +32 +46 dBm +25.5 +25.5 dBm dB 2140 11 -18 -8 +31.5 +45 +23 7.0 5.5 6.2 +5 V @ 450 mA 4. Typical parameters reflect performance in a tuned application circuit at+25° C. 1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Ordering Information Parameters Rating Part No. Description Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power -40 to +85 °C -65 to +150 °C +26 dBm +8 V 900 mA 5W AH215-S8 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140 1 Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004 AH215 The Communications Edge TM 1 Watt, High Linearity HBT Amplifier Product Information Typical Device Data S-Parameters (Vcc = +5 V, I cc = 450 mA, T = 25°C, calibrated to device leads) S22 DB(GMax) 30 0. 4 0.8 0 3. 25 0.2 20 3.0 4.0 4.0 5.0 5.0 0.2 10.0 5 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10 0.2 10.0 15 -10.0 -10.0 2 -0. 2 -0. -5. 0 -4. 0 0 -5. 0 -4. 0 -3 .0 .0 -2 .4 -0 -0. 6 2.5 -0.8 2 -0.8 1 1.5 Frequency (GHz) Swp Min 0.05GHz -1.0 0.5 -0 .6 0 .0 -2 .4 -0 -10 Swp Min 0.05GHz -1.0 -5 -3 .0 Gain (dB) 6 0. 2.0 DB(|S[2,1]|) Swp Max 5.05GHz 0. 4 35 2. 0 1.0 0.8 6 0. Swp Max 5.05GHz 1.0 S11 Gain and Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, I cc = 450 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82 -177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68 24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09 122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99 -40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37 17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22 -1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92 -130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004 AH215 The Communications Edge TM 1 Watt, High Linearity HBT Amplifier Product Information 900 MHz Application Circuit (AH215-S8PCB900) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) +25.5 dBm Noise Figure Device / Supply Voltage Quiescent Current (1) 7.0 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 18 -4 -4 16 14 +25°C +85°C 860 -12 -16 -40°C 8 840 -8 +25°C +85°C 880 900 920 -20 840 940 9 32 P1 dB (dBm) NF (dB) 880 900 920 8 +25°C +85°C 940 880 900 920 940 Frequency (MHz) ACPR vs. Channel Power -40 30 +25°C 28 +85°C -40°C -45 +25°C -50 +85°C -40°C -55 -60 -65 24 880 900 920 940 840 860 Frequency (MHz) OIP3 vs. Output Power 880 900 Frequency (MHz) 920 940 19 20 21 22 23 24 25 26 Output Channel Power (dBm) 44 41 38 +25°C, +15 dBm / tone 50 50 47 47 OIP3 (dBm) OIP3 (dBm) 47 44 41 35 25 35 -40 44 41 38 38 22 27 OIP3 vs. Frequency freq. = 900, 901 MHz, +15 dBm 50 16 19 Output Power (dBm) -70 OIP3 vs. Temperature freq. = 900, 901 MHz, +25°C 13 860 IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz 26 -40°C 10 -20 840 P1 dB vs. Frequency 10 860 +85°C Frequency (MHz) 34 5 840 +25°C -40°C 860 Noise Figure vs. Frequency 6 -12 -40°C Frequency (MHz) 7 -8 -16 ACPR (dBc) 12 S22 (dB) 0 10 OIP3 (dBm) S22 vs. Frequency 20 S11 (dB) S21 (dB) S21 vs. Frequency (MHz) -15 10 35 Temperature (°C ) 60 85 35 840 860 880 900 Frequency (MHz) 920 940 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004 AH215 The Communications Edge TM 1 Watt, High Gain HBT Amplifier Product Information 1960 MHz Application Circuit (AH215-S8PCB1960) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power +25.5 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 5.5 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency S22 vs. Frequency 0 16 -5 -5 14 12 +25°C -15 +25°C -40°C -20 +85°C 1940 1950 1960 1970 1980 -25 1930 1990 1940 1950 Noise Figure vs. Frequency P1 dB (dBm) NF (dB) 1970 1980 -25 1930 1990 5 4 3 +25°C 2 +85°C 1 -40°C 31 29 +25°C +85°C 25 1970 1980 1990 1930 1940 1950 Frequency (MHz) OIP3 vs. Frequency 1960 1970 1980 1990 OIP3 vs. Output Power freq. = 1960, 1961 MHz, +25°C 50 51 46 OIP3 (dBm) 50 OIP3 (dBm) 55 47 43 39 1960 1970 Frequency (MHz) -40°C 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) 55 1950 1980 1990 35 -40 1990 +85°C OIP3 vs. Temperature 40 1980 +25°C freq. = 1960, 1961 MHz, +15 dBm 45 1970 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 Frequency (MHz) +25°C, 15 dBm / tone 1960 ACPR vs. Channel Power -40°C 1960 1950 IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz 27 0 1950 1940 Frequency (MHz) 33 1940 -40°C P1 dB vs. Frequency 6 OIP3 (dBm) 1960 35 7 35 1930 +85 °C Frequency (MHz) 8 1940 +25 °C -15 -40°C Frequency (MHz) 1930 -10 -20 ACPR (dBc) 8 1930 -10 +85°C 10 S22 (dB) 0 S11 (dB) S21 (dB) S21 vs. Frequency 18 42 38 34 30 -15 10 35 Temperature ( °C) 60 85 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004 AH215 The Communications Edge TM 1 Watt, High Gain HBT Amplifier Product Information 2140 MHz Application Circuit (AH215-S8PCB2140) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +23 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 6.2 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. 9 +25°C +85°C 3 9 8 7 6 5 4 3 2 1 0 2110 2130 -22 +25°C +85°C -26 -40°C 2120 -5 -18 2140 2150 2160 -30 2110 2170 2120 2160 2170 2120 2130 2140 2150 -40 -45 +25°C 28 +85°C -40°C -50 +25°C -55 +85°C -40°C -60 2140 2150 2160 2170 2120 2130 2140 2150 2160 2170 -65 19 Frequency (MHz) freq. = 2140, 2141 MHz, 25°C 50 41 47 OIP3 (dBm) OIP3 (dBm) 44 44 41 38 38 60 85 35 2110 24 OIP3 vs. Output Power +25°C, +15 dBm / tone 50 47 10 35 Temperature (°C ) 20 21 22 23 Output Channel Power (dBm) OIP3 vs. Frequency freq. = 2140, 2141 MHz, +15 dBm / tone 2170 ACPR vs. Channel Power 30 24 2110 2160 3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz 26 2130 -15 2120 Frequency (MHz) 32 47 OIP3 (dBm) 2150 -20 2110 34 OIP3 vs. Temperature 35 -40 2140 P1 dB vs. Frequency Frequency (MHz) 50 2130 Noise Figure vs. Frequency -40°C +85°C -40°C Frequency (MHz) +85°C +25°C -40°C Frequency (MHz) +25°C -10 -15 ACPR (dBc) NF (dB) 0 2110 0 S22 (dB) -14 S11 (dB) 12 P1 dB (dBm) S21 (dB) -10 6 S22 vs. Frequency S11 vs. Frequency S21 vs. Frequency 15 44 41 38 35 2120 2130 2140 2150 Frequency (MHz) 2160 2170 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004 AH215 The Communications Edge TM 1 Watt, High Gain HBT Amplifier Product Information Outline Drawing Product Marking The component will be marked with an “AH215-S8” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Land Pattern Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85° C 33° C / W 159° C Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground slug underneath the device. 2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. Tjc is a function of the voltage at pins 6 & 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Parameter 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8 All dimensions are in millimeters (inches). Angles are in degrees. 100000 10000 1000 100 50 60 70 80 90 100 Tab temperature (° C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com July 2004