PD- 94243
IRF4435
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -30V
RDS(on) = 0.020Ω
T o p V ie w
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
V
W/°C
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
6/12/01
IRF4435
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = -250µA
-0.019 ––– V/°C Reference to 25°C, ID = -1mA
0.015 0.020
VGS = -10V, ID = -8.0A
Ω
0.026 0.035
VGS = -4.5V, ID = -5.0A
––– –––
V
VDS = VGS, ID = -250µA
11 –––
S
VDS = -15V, ID = -8.0A
––– -10
VDS = -24V, VGS = 0V
µA
––– -10
VDS = -15V, VGS = 0V, TJ = 70°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
40
60
ID = -4.6A
7.1 –––
nC
VDS = -15V
8.0 –––
VGS = -10V
16
24
VDD = -15V, VGS = -10V
76 110
ID = -1.0A
ns
130 200
RG = 6.0Ω
90 140
R D = 15Ω
2320 –––
VGS = 0V
390 –––
pF
VDS = -15V
270 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-50
–––
–––
–––
–––
34
33
-1.2
51
50
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, I F = -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF4435
1000
1000
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
100
100
10
1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-2.70V
1
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -15V
20µs PULSE WIDTH
4.0
5.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
3.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
2.0
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
6.0
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF4435
VGS =
Ciss =
Crss =
Coss =
3000
C, Capacitance (pF)
2500
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
Ciss
2000
1500
1000
Coss
500
20
ID = -4.6A
VDS = -15V
-VGS , Gate-to-Source Voltage (V)
3500
16
12
8
4
Crss
0
0
1
10
0
100
10
20
30
40
50
60
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
TJ = 150 ° C
TJ = 25 ° C
1
100us
1ms
10
10ms
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1.4
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF4435
8.0
0.20
6.0
-V GS(th) , Variace ( V )
-ID , Drain Current (A)
0.10
4.0
2.0
0.00
Id = -250µA
-0.10
-0.20
-0.30
-0.40
0.0
25
50
75
100
125
150
-50
-25
0
TC , Case Temperature ( ° C)
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
0.1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS ( on) , Drain-to-Source On Resistance ( Ω )
IRF4435
R DS(on) , Drain-to -Source Voltage ( Ω )
0.10
0.08
0.06
Id = -8.0A
0.04
0.02
0.00
2
4
6
8
10
12
14
-V GS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
16
0.10
0.08
0.06
VGS= - 4.5V
0.04
0.02
VGS = -10V
0.00
0
10
20
30
-I D , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
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40
IRF4435
SO-8 Package Details
DIM
D
-B-
5
8
7
6
5
1
2
3
e
6X
0.25 (.010)
4
M
A M
MAX
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
-C-
0.10 (.004)
B 8X
A1
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
θ
A
0.25 (.010)
MIN
A
e
K x 45°
e1
L
8X
6
M C A S B S
C
8X
MILLIMETERS
MAX
5
H
E
-A-
INCHES
MIN
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
SO-8 Part Marking
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7
IRF4435
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
8
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