ETC IRF7433

PD -94056
IRF7433
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
VDSS
RDS(on) max
ID
-12V
24mΩ@VGS = -4.5V
30mΩ@VGS = -2.5V
-8.7A
46mΩ@VGS = -1.8V
-6.3A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
-7.4A
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
50
°C/W
1
12/15/00
IRF7433
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
–––
–––
-0.4
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.007
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
4.5
4.0
8.8
8.2
272
175
1877
512
310
Max. Units
Conditions
–––
V
V GS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
24
VGS = -4.5V, ID = -8.7A ‚
mΩ VGS = -2.5V, ID = -7.4A ‚
30
46
VGS = -1.8V, ID = -6.3A ‚
-0.9
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -8.7A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -8.7A
–––
nC
VDS = -6V
–––
VGS = -4.5V ‚
13
VDD = -6V, VGS = -4.5V
ns
12
ID = -1.0A
408
RD = 6Ω
263
RG = 6Ω ‚
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-36
–––
–––
–––
–––
36
28
-1.2
54
42
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V ‚
TJ = 25°C, I F = -2.5A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7433
100
VGS
TOP
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
10
-1.2V
1
VGS
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
10
-1.2V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
10
TJ = 25 ° C
V DS = -10V
20µs PULSE WIDTH
1.5
2.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1
1.0
1
-VDS, Drain-to-Source Voltage (V)
2.5
ID = -8.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7433
C, Capacitance(pF)
2800
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
2400
Coss = Cds + Cgd
Ciss
2000
1600
1200
800
Coss
400
Crss
-VGS , Gate-to-Source Voltage (V)
6
3200
ID = -8.7A
5
4
3
2
1
0
0
1
10
0
100
5
15
20
25
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 150 ° C
TJ = 25 ° C
1
100us
10
1ms
10ms
0.1
0.2
4
V DS =-9.6V
V DS =-6V
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1
0.1
1
10
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
100
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IRF7433
9.0
VDS
-ID , Drain Current (A)
7.5
VGS
RD
D.U.T.
RG
-
6.0
+
VDD
VGS
4.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
1.5
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.050
( )
RDS ( on ) , Drain-to-Source On Resistance Ω
(
RDS(on), Drain-to -Source On Resistance Ω)
IRF7433
0.040
0.030
ID = -8.7A
0.020
0.010
0.0
2.0
4.0
6.0
8.0
10.0
0.15
0.12
VGS = -1.8V
0.09
0.06
VGS = -2.5V
0.03
VGS = -4.5V
0
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7433
1.0
300
200
Power (W)
-VGS(th) ( V )
0.8
ID = -250µA
0.6
100
0.4
0.2
0
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7433
SO-8 Package Details
D
8
6
7
6
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
A
5
H
E
0.25 [.010]
1
6X
2
3
A
4
e
e1
C
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MIN
5
A
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOT PRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNAT IONAL
RECTIFIER
LOGO
8
YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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IRF7433
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the commercial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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