ETC NUR30Q/D

NUR30Q
Quad Schottky Barrier
Diodes Array
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features:
30 VOLT
QUAD
SCHOTTKY DIODES ARRAY
• Very Low Forward Voltage
• Guard Ring Protected
• Ultra Small SMD Package
Typical Applications:
• Ultra High−Speed Switching
• Low Current Rectification
• Low Power Consumption Applications (e.g. Hand−Held Devices)
1
5
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
3
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
385
3.1
mW
mW/°C
Forward Current (DC)
IF
200
mA
Junction Temperature
TJ
125
°C
4
MARKING
DIAGRAM
4
SC−88A/SOT−353
CASE 419A
STYLE 9
5
R9
1
1
5
D
Symbol
Rating
2
3
R9 = Device Marking
D
= One Digit Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NUR30QW5T1
SC−88A
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 1
1
Publication Order Number:
NUR30Q/D
NUR30Q
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
−
10
20
pF
Reverse Leakage (VR = 10 V)
IR
−
1.5
30
Adc
Forward Voltage (IF = 0.1 mAdc)
VF
−
0.15
0.19
Vdc
Forward Voltage (IF = 1.0 mAdc)
VF
−
0.21
0.25
Vdc
Forward Voltage (IF = 10 mAdc)
VF
−
0.28
0.30
Vdc
Forward Voltage (IF = 100 mAdc)
VF
−
0.36
0.41
Vdc
Forward Voltage (IF = 200 mAdc)
VF
−
0.41
0.50
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
−
5.0
−
ns
Characteristic
820 Ω
+10 V
2k
100 µH
0.1 µF
IF
tr
0.1 µF
tp
t
IF
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
NUR30Q
IR, REVERSE CURRENT (mA)
10
100
TA = 1 25°C
10
85°C
25°C
TA = 1 25°C
1
85°C
0.1
0.01
25°C
0.001
0.0001
1
0
0.1
0.2
0.3
5
0
0.5
0.4
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Current as a Function of
Forward Voltage; Typical Values
25
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current as a Function of
Reverse Voltage; Typical Values
20
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
f = 1 MHz
TA = 25°C
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance as a Function of
Reverse Voltage; Typical Values
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3
30
30
NUR30Q
PACKAGE DIMENSIONS
SC−88A (SOT−353)
CASE 419A−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
G
5
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 5 PL
0.2 (0.008)
M
B
M
N
J
C
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
K
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NUR30Q/D