ETC PG10195EJ01V0PF

GaAs DEVICES SELECTION GUIDE
2002/2003
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of September 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
2
Selection Guide PG10195EJ01V0PF
TABLE OF CONTENTS
1.
SERIES OF GaAs DEVICE PRODUCTS...................................................................................... 4
2.
MAP OF THE RF PERFORMANCE.............................................................................................. 5
HJ-FET ........................................................................................................................................... 5
Power GaAs FET............................................................................................................................ 6
3.
ELECTRICAL CHARACTERISTICS TABLE.................................................................................. 7
HJ-FET (Hetero Junction FET)....................................................................................................... 7
GaAs MES FET .............................................................................................................................. 7
GaAs HBT (Hetero Junction Bipolar Transistor)............................................................................. 9
HJ-FET (Hetero Junction FET) Chip .............................................................................................. 9
GaAs MES FET Chip...................................................................................................................... 9
GaAs MES FET ............................................................................................................................. 11
UHF Dual Gate GaAs MES FET.................................................................................................... 11
L, S-Band Internally Matched Power GaAs FET Series ................................................................ 13
L to C-Band Driver Power GaAs FET ............................................................................................ 13
Ku-Band Power GaAs FET............................................................................................................ 13
GaAs Analog MMIC (Wideband Amplifier) .................................................................................... 14
GaAs Analog MMIC (AGC Amplifier)............................................................................................. 14
GaAs Analog MMIC (Dual Amplifier) ............................................................................................. 14
GaAs Analog MMIC (Power Amplifier) .......................................................................................... 16
DBS IF Switch................................................................................................................................ 16
GaAs Switch MMIC........................................................................................................................ 16
Multi-Chip Module for CATV .......................................................................................................... 18
4.
APPLICATION NOTE...................................................................................................................... 19
5.
PACKAGE DIMENSIONS ............................................................................................................... 20
FET ................................................................................................................................................ 20
Power FET..................................................................................................................................... 20
MMIC ............................................................................................................................................. 22
6.
INDEX ............................................................................................................................................... 23
7.
REFERENCE.................................................................................................................................... 24
8.
WEB SITE INFORMATION ............................................................................................................. 24
Selection Guide PG10195EJ01V0PF
3
1.
SERIES OF GaAs DEVICE PRODUCTS
HJ-FET
(Hetero Junction FET)
MES FET
Discrete
FET
Dual Gate
MES FET
Power FET
Amplifier
GaAs DEVICES
AGC Amplifier
MMIC
Prescaler
Switch
Power Amplifier
Multi-Chip
Module
4
Selection Guide PG10195EJ01V0PF
CATV
MAP OF THE RF PERFORMANCE
HJ-FET
ASSOCIATED GAIN vs. NOISE FIGURE
NE3210S01
f = 12 GHz
NE4210S01
Associated Gain Ga (dB)
13
12
11
NE429M01
10
0.3
0.4
0.5
0.7
0.6
0.8
0.9
Noise Figure NF (dB)
ASSOCIATED GAIN vs. NOISE FIGURE
18
17
NE52418
(GaAs HBT)
Associated Gain Ga (dB)
2.
NE34018
16
2SC5761
(SiGe)
2SC5508
(Si-BJT)
15
NE38018
14
13
: f = 2 GHz, VDS = 2 V, ID = 5 mA
: f = 2 GHz, VDS = 2 V, ID = 3 mA
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Noise Figure NF (dB)
Selection Guide PG10195EJ01V0PF
5
Power GaAs FET
OUTPUT POWER, GAIN 1 dB COMPRESSION OUTPUT POWER vs. FREQUENCY
Output Power Pout (dBm), Gain 1 dB Compression Output Power PO(1 dB) (dBm)
53.0
NES1823M-240
NES1823M-150
(Under Development)
51.0
49.0
47.0
NES1823M-45
(Under Development)
45.0
43.0
41.0
NE6501077
39.0
37.0
35.0
NE6500496
NE6500379A
NE6510379A
33.0
NE85002 series
31.0
NE6500179A
NE6510179A
NE85001 series
29.0
NE960R575
27.0
NE850R5 series
NE960R275
25.0
NE650R479A
NE651R479A
23.0
NE650R279A
21.0
19.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Frequency f (GHz)
6
Selection Guide PG10195EJ01V0PF
14.0
16.0
18.0
20.0
3.
ELECTRICAL CHRACTERISTICS TABLE
HJ-FET (Hetero Junction FET)
Absolute Maximum Ratings (TA = +25°C)
PackPart Number age
VDS
Code (V)
Note1
Electrical Characteristics (TA = +25°C)
IDSS
VGS
ID
Ptot Tch
(V) (mA) (mW) (°C)
Tstg
(°C)
VDS
(V)
VP
(mA)
gm
(V)
(mS)
VDS
ID
VDS
ID
MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP.
S01
4.0
−3.0
IDSS
165
125
−65 to +125
2
15
40
70
2
0.1
−0.2 −2.0
2
10
40
55
NE4210S01
S01
4.0
−3.0
IDSS
165
125 −65 to +125
2
15
40
70
2
0.1
−0.2 −2.0
2
10
40
55
NE429M01
M01
4.0
−3.0
IDSS
165
125 −65 to +125
2
20
60
90
2
0.1
−0.2 −2.0
2
10
45
60
NE34018
18
4.0
−3.0
IDSS
150
125 −65 to +125
2
30
−
120
2
0.1
−0.2 −2.0
2
5
30
−
NE38018
18
4.0
−3.0
IDSS
150
125 −65 to +125
2
40
−
170
2
0.1
−0.1 −1.5
2
5
50
−
NE3210S01
Notes 1. -T1: 1000 pcs/reel, -T1B: 4000 pcs/reel (Tape & reel)
2. IDSS rank is specified as follows (V63: 30 to 65 mA, V64: 60 to 120 mA)
3. IDSS rank is specified as follows (V67: 40 to 90 mA, V68: 70 to 170 mA)
GaAs MES FET
Absolute Maximum Ratings (TA = +25°C)
PackPart Number age
VDS
Code (V)
NE71383B
83B
Electrical Characteristics (TA = +25°C)
IDSS
VGS ID Rth(c-c) Ptot Tch
(V) (mA) (°C/W) (mW) (°C)
5.0 −5.0 IDSS
−
Tstg
(°C)
270 175 −65 to +175
VP
gm
(mA)
(V)
(mS)
VDS
VDS
ID
VDS
ID
(V) MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP.
3
20
40
Selection Guide PG10195EJ01V0PF
120
3
0.1 −0.5 −3.5
3
10
20
50
7
Electrical Characteristics (TA = +25°C)
MSG./MAG.
VDS
(V)
IDS
(mA)
f
(GHz)
2
10
2
NFopt
(dB)
Ga
(dB)
TYP.
VDS
(V)
IDS
(mA)
f
(GHz)
TYP.
12
15
2
10
12
10
12
15
2
10
2
10
12
11
2
2
5
2
18
2
5
2
16
Marking
(dB)
Part Number
MAX.
VDS
(V)
IDS
(mA)
f
(GHz)
MIN.
TYP.
0.35
0.45
2
10
12
12.0
13.5
K
NE3210S01
12
0.50
0.70
2
10
12
11.0
13.0
L
NE4210S01
10
12
0.9
1.2
2
10
12
9.0
10.0
V72
NE429M01
2
5
2
0.6
1.0
2
5
2
14
16
Note 2 NE34018
2
5
2
0.55
1.0
2
5
2
12.5
14.5
Note 3 NE38018
Note1
Electrical Characteristics (TA = +25°C)
MSG./MAG.
8
VDS
(V)
IDS
(mA)
f
(GHz)
−
−
−
NFopt
(dB)
Ga
(dB)
TYP.
VDS
(V)
IDS
(mA)
f
(GHz)
TYP.
−
3
10
12
1.6
Marking
(dB)
MAX.
VDS
(V)
IDS
(mA)
f
(GHz)
MIN.
TYP.
1.8
3
10
12
8.5
9.5
Selection Guide PG10195EJ01V0PF
−
Part Number
NE71383B
GaAs HBT (Hetero Junction Bipolar Transistor)
Absolute Maximum Ratings (TA = +25°C)
Pack
Part
-age VCEO VCBO VEBO IC
IB Ptot Tj
Number
Code (V) (V) (V) (mA) (mA) (mW) (°C)
NE52418
18
5.0
3.0
3.0
40
0.3 150 125
Electrical Characteristics (TA = +25°C)
hFE
Tstg
(°C)
−65 to 125
ICBO
IEBO
(µA)
(µA)
VCE IC
VCBO
VEBO
(V) (mA) MIN. TYP. MAX. (V) MIN. TYP. MAX. (V) MIN. TYP. MAX.
2
3
110 150 190
−
3
0.2
1.0
−
3
0.2
1.0
HJ-FET (Hetero Junction FET) Chip
Absolute Maximum Ratings (TA = +25°C)
Part
Number
Electrical Characteristics (TA = +25°C)
IDSS
VDS
(V)
VGS
(V)
ID
(mA)
Ptot
(mW)
Tch
(°C)
Tstg
(°C)
VP
(mA)
VDS
(V)
MIN.
TYP.
(V)
MAX.
VDS
(V)
ID
(mA)
MIN.
MAX.
NE321000
4
−3
IDSS
200
175
−65 to +175
2
15
40
70
2
0.1
−0.2
−2.0
NE32500
4
−3
IDSS
200
175
−65 to +175
2
20
60
90
2
0.1
−0.2
−2.0
GaAs MES FET Chip
Absolute Maximum Ratings (TA = +25°C)
Part
Number
NE71300
Electrical Characteristics (TA = +25°C)
IDSS
VDS
(V)
5
VGS
(V)
−5
ID
(mA)
IDSS
Ptot
(mW)
400
Tch
(°C)
175
Tstg
(°C)
−65 to +175
VP
(mA)
VDS
(V)
MIN.
TYP.
3
20
40
Selection Guide PG10195EJ01V0PF
(V)
MAX.
VDS
(V)
ID
(mA)
MIN.
MAX.
120
3
0.1
−0.5
−3.5
9
Electrical Characteristics (TA = +25°C)
IIP3
NF
VCE
(V)
IC
(mA)
f
(GHz)
2.5
8
2
(dB)
Ga
(dB)
TYP.
VCE
(V)
IC
(mA)
f
(GHz)
TYP.
+8
2
3
2
0.95
Marking
(dB)
MAX.
VCE
(V)
IC
(mA)
f
(GHz)
MIN.
TYP.
1.35
2
3
2
15
17
V45
Part Number
NE52418
Electrical Characteristics (TA = +25°C)
gm
NFopt
(mS)
VDS
(V)
ID
(mA)
MIN.
2
10
2
10
Ga
(dB)
TYP.
VDS
(V)
ID
(mA)
f
(GHz)
TYP.
40
55
2
10
12
45
60
2
10
12
Part Number
(dB)
MAX.
VDS
(V)
ID
(mA)
f
(GHz)
MIN.
TYP.
0.35
0.45
2
10
12
12
13.5
NE321000
0.45
0.55
2
10
12
11
12.5
NE32500
Electrical Characteristics (TA = +25°C)
gm
10
NFopt
(mS)
VDS
(V)
ID
(mA)
MIN.
3
10
20
Ga
PO(1 dB)
(dB)
(dB)
TYP.
VDS
(V)
ID
(mA)
f
(GHz)
TYP.
MAX.
MIN.
50
3
10
12
1.6
1.8
8.5
Selection Guide PG10195EJ01V0PF
TYP.
VDS
(V)
ID
(mA)
f
(GHz)
9.5
3
30
12
(dBm)
Part Number
TYP.
14.5
NE71300
GaAs MES FET
Absolute Maximum Ratings (TA = +25°C)
PackPart Number age
VDS
Code (V)
VGS
ID
Ptot Tch
(V) (mA) (mW) (°C)
NE722S01
NE72218
Electrical Characteristics (TA = +25°C)
IDSS
Tstg
(°C)
VDS
(V)
VP
(mA)
gm
(V)
(mS)
VDS
ID
VDS
ID
MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP.
S01
5.0
−6.0
IDSS
250
125 −65 to +125
3
60
90
120
3
0.1
−0.5 −4.0
3
30
20
40
18
5.0
−6.0
IDSS
250
125 −65 to +125
3
30
60
120
3
0.1
−0.5 −4.0
3
30
20
45
Note IDSS rank is specified as follows (V57: 30 to 120 mA, V58: 65 to 120 mA, V59: 30 to 75 mA)
UHF Dual Gate GaAs MES FET
Absolute Maximum Ratings (TA = +25°C)
Pack
Part
-age VDSX VG1S VG2S ID
PT Tch
Number
Code (V) (V) (V) (mA) (mW) (°C)
3SK299
(NE25118)
18
13
−4.5 −4.5
40
120 125
Electrical Characteristics (TA = +25°C)
BVDSX
Tstg
(°C)
−55 to
+125
IDSS
VG1S(off)
VG2S(off)
IG1SS
(V) VDS
(mA)
(V) (V) VDS VG1S
VDS
VG1S VG2S ID
ID
(V) (V) (µA) MIN. (V) MIN. MAX. (V) (mA) MAX. MAX. (V) (V)
−
−
−
−
5
5
40
5
0.1 −3.5 −3.5
0
−4
Note IDSS rank is specified as follows (U71: 5 to 15 mA, U72: 10 to 25 mA, U73: 20 to 35 mA, U74: 30 to 40 mA)
Selection Guide PG10195EJ01V0PF
11
Electrical Characteristics (TA = +25°C)
MSG./MAG.
PN (10 kHz offset)
VDS
(V)
IDS
(mA)
f
(GHz)
3
10
−
−
(dB)
TYP.
VDS
(V)
IDS
(mA)
f
(GHz)
12
7
3
30
−
−
3
30
GS
dBc/Hz
Marking
(dB)
TYP.
VDS
(V)
IDS
(mA)
f
(GHz)
MIN.
TYP.
11
−90
3
30
12
−
6.0
P
11
−90
3
30
12
−
5.0
Note
Part Number
NE722S01
NE72218
Electrical Characteristics (T A = +25°C)
IG1SS
yfs
IG2SS
(µA) (µA)
VG2S
VDS
(V) MAX. MAX. (V)
0
12
10
10
5
NF
GPS
Ciss Crss
f
(pF) (pF)
(mS)
(dB)
(dB)
VG2S ID
f
f
VDS VG2S ID
(MHz)
(V) (mA) (kHz) MIN.
TYP. TYP. (V) (V) (mA) (MHz) TYP. TYP. MIN. TYP.
1
10
1.0
18
1
1.0 0.02
5
1
10
Selection Guide PG10195EJ01V0PF
900
1.1
2.5
16
20
Marking
Part
Number
Note
3SK299
(NE25118)
L, S-Band Internally Matched Power GaAs FET Series
VDS
(V)
IDSset
(mA)
f
(GHz)
Pout (dBm)
GL (dB)
IM3 (dBc)
TYP.
TYP.
12.0
3 000
2.17
53.5
Part Number
NES1823M-240
Package
TYP.
Frequency Range
(GHz)
12.0
−
1.8 to 2.3
T-92M
Package
L to C-Band Driver Power GaAs FET
VDS
(V)
IDSset
(mA)
f
(GHz)
PO(1 dB) (dBm)
GL (dB)
ηadd (%)
TYP.
TYP.
TYP.
Frequency Range
(GHz)
6.0
500
1.9
35.0
10.0
50
0.8 to 3.0
79A
10.0
≤ 400
45
2.3
96
NE6501077
10.0
≤ 1 000
2.3
10.5
40
2.3
77
NE650R279A
6.0
50
1.9
23.0
16.0
45
0.8 to 3.0
79A
NE650R479A
6.0
100
1.9
26.0
14.0
45
0.8 to 3.0
79A
45
0.8 to 3.0
79A
Part Number
NE6500379A
NE6500496
NE6500179A
6.0
NE6510179A
3.5
NE6510379A
3.5
200
200
200
2.3
1.9
1.9
1.9
36.0
Note1
39.5
Note1
30.0
32.5
10.0
58
0.8 to 3.0
79A
32.5
Note3
8.0
52
0.8 to 3.0
79A
12.0
60
0.8 to 3.0
79A
−
2.0 to 10.0
99
NE651R479A
3.5
50
1.9
27.0
NE8500199
10.0
200
7.2
28.5
Note1
33.8
Note1
33.8
Note1
33.5
Note1
25.5
Note1
NE8500295-6
NE8500295-8
NE850R599A
10.0
10.0
10.0
10.0
450
450
450
100
4.2
6.5
8.5
7.2
12.0
Note4
Note3
Note3
NE8500295-4
11.5
Note2
9.0
Note2
−
3.5 to 5.5
95
9.5
Note2
−
5.5 to 7.5
95
8.0
Note2
−
7.5 to 8.5
95
9.5
Note2
−
2.0 to 10.0
99
Frequency Range
(GHz)
Package
10.5
Note2
Notes 1. PO (MIN.) (−4: Pin = 24.5 dBm, −6: Pin = 25.5 dBm, −8: Pin = 27.0 dBm)
2. GL (MIN.)
3. Pout
4. Pin = 0 dBm
Ku-Band Power GaAs FET
Part Number
VDS
(V)
IDSset
(mA)
f
(GHz)
PO(1 dB)
(dBm)
GL
(dB)
ηadd
(%)
TYP.
TYP.
TYP.
NE960R275
9.0
90
14.5
25.0
10.0
35
4 to 18
75
NE960R575
9.0
180
14.5
27.5
9.0
30
4 to 18
75
Selection Guide PG10195EJ01V0PF
13
GaAs Analog MMIC (Wideband Amplifier)
Absolute Maximum Ratings (TA = +25°C)
Electrical Characteristics (TA = +25°C)
Condition
Part Number
µPG2115TB
VDD1
(V)
+6
VDD2
(V)
−
VAGC
(V)
−
Pin
(dBm)
0
Note
PT
(W)
0.14
Tstg
(°C)
−35 to +150
TA
(°C)
−30 to +90
IDD
(mA)
VDD1
(V)
VDD2
(V)
VAGC
(V)
f
(GHz)
TYP.
MAX.
+3
−
−
0.89 to 0.96
12
16
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
GaAs Analog MMIC (AGC Amplifier)
Absolute Maximum Ratings (TA = +25°C)
Electrical Characteristics (TA = +25°C)
Condition
Part Number
VDD1
(V)
VDD2
(V)
VAGC
(V)
Note1
Pin
PT
(dBm) (W)
Tstg
(°C)
TA
(°C)
IDD
(mA)
VDD1
(V)
VDD2
(V)
VAGC
(V)
f
(GHz)
TYP.
MAX.
µPG2106TB
+6
+6
+6
−8
0.14
−35 to +150
−30 to +90
+3
+3
+2.5
0.89 to 0.96
25
35
µPG2110TB
+6
+6
+6
−8
0.14
−35 to +150
−30 to +90
+3
+3
+2.5
1.429 to 1.453
25
35
µPG2128TB
+6
+6
+6
−8
0.14
−35 to +150
−30 to +90
+3
+3.5
+2.5
1.429 to 1.453
40
48
µPG2130TB
+6
+6
+6
−8
0.14
−35 to +150
−30 to +90
+3
+3.5
+2.5
1.429 to 1.453
25
35
Notes 1. Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
2. ∆f = ±50 kHz, π/4DQPSK modulated signal input.
3. ∆f = ±100 kHz, π/4DQPSK modulated signal input.
GaAs Analog MMIC (Dual Amplifier)
Absolute Maximum Ratings (TA = +25°C)
Electrical Characteristics (TA = +25°C)
Condition
Part Number
VDD1
(V)
VDD2
(V)
VDD3
(V)
Pin
(dBm)
Note
PT
(W)
Tstg
(°C)
TA
(°C)
VDD1
(V)
VDD2
(V)
VDD3
(V)
−
0.93 to 0.96
+3.6 1.429 to 1.453
µPG2126TB
+6
−
−
+6
−
+6
+4
−4
0.14
−35 to +150
−30 to 90
+3.6
−
−
+3.6
µPG2304TK
+4
−
−
+10
0.125
−65 to +150
−30 to +85
+2.8
−
−
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
14
Selection Guide PG10195EJ01V0PF
f
(GHz)
0.68 to 0.77
1.27 to 1.37
IDD
(mA)
TYP.
MAX.
16
28
20
32
3.5
4.0
Electrical Characteristics (TA = +25°C)
IAGC
GP
GCR
Padj1
Padj2
Pout
(mA)
(dB)
(dB)
(dBc)
(dBc)
(dBm)
Package
Part Number
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
−
−
14
17
−
−
−60
−55
−70
−65
+8
6SMM
µPG2115TB
Pout
(dBm)
Package
Part Number
Electrical Characteristics (TA = +25°C)
IAGC
(mA)
GP
(dB)
Note2
GCR
(dB)
Padj1
(dBc)
Note3
Padj2
(dBc)
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
0.2
0.5
26
30
35
40
−60
−55
−70
−65
+8
6SMM
µPG2106TB
0.2
0.5
24
27
35
40
−60
−55
−70
−65
+8
6SMM
µPG2110TB
0.2
0.5
26
28
35
40
−60
−55
−70
−65
+12
6SMM
µPG2128TB
0.2
0.5
28
30
37
42
−60
−55
−70
−65
+10
6SMM
µPG2130TB
Electrical Characteristics (TA = +25°C)
GP
(dB)
ISL
(dB)
Padj1
(dBc)
Padj2
(dBc)
Pout
(dBm)
Package
Part Number
TYP.
MAX.
MIN.
TYP.
TYP.
MAX.
TYP.
MAX.
TYP.
16
26
18
28
−
−
−
−
−60
−60
−55
−55
−70
−70
−65
−65
+8
+8
6SMM
µPG2126TB
0
+2
30
35
−
−
−
−
−
6L2MM
µPG2304TK
Selection Guide PG10195EJ01V0PF
15
GaAs Analog MMIC (Power Amplifier)
Electrical Characteristics
(TA = +25°C)
Absolute Maximum Ratings(TA = +25°C)
Part Number
µPG2301TQ
Condition
Application
Bluetooth
TM
VCC1
(V)
VCC2
(V)
Vcont
(V)
Venable
(V)
5
5
3.6
3.6
ICC
Pin
PD
(mA) (dBm) (mW)
400
10
Tstg
(°C)
TA
(°C)
−55 to +150 −40 to +85
700
VCC1
(V)
VCC2
(V)
Vcont
(V)
Venable
(V)
3.3
3.3
3.3
3.3
DBS IF Switch
Absolute Maximum Ratings
(TA = +25°C)
Part Number
Electrical Characteristics (T A = +25°C)
Function
LINS (dB)
∆LINS (dB)
Vcont
(V)
PT
(W)
TA
(°C)
Tstg
(°C)
Condition
f (GHz)
TYP.
MAX.
TYP.
MAX.
µPG181GR
DBS 2 × 2 IF Switch
−6 to
+6
2
−40 to
+85
−65 to
+150
0.95 to
2.15
5.0
7.0
0.8
1.5
µPG183GR
DBS 4 × 2 IF Switch
−1 to
+6
2
−40 to
+85
−65 to
+150
0.95 to
2.15
7.0
9.0
1.5
3.0
µPG186TQ
DBS SPDT IF Switch
−1 to
+6
2
−40 to
+85
−65 to
+150
0.95 to
2.15
1.5
2.5
0.4
1.0
µPG187GR
DBS Twin SPDT IF Switch
−1 to
+6
2
−40 to
+85
−65 to
+150
0.95 to
2.15
1.8
3.0
0.4
1.2
µPG188GR
DBS 4 × 2 IF Switch
−1 to
+6
2
−40 to
+85
−65 to
+150
0.95 to
2.15
7.0
9.0
1.5
3.0
GaAs Switch MMIC
Absolute Maximum Ratings (TA = +25°C)
Part Number
Function
Vcont
(V)
PT
(W)
Pin
(dBm)
TC
(°C)
Tstg
(°C)
µPG152TA
L-Band SPDT Switch
−6 to +6
0.4
+31
−50 to +80
−65 to +150
µPG153TB
L-Band SPDT Switch
−6 to +6
0.15
+33
−45 to +85
−55 to +150
µPG154TB
L-Band SPDT Switch
−6 to +6
0.15
+31
−45 to +85
−55 to +150
µPG155TB
L-Band SPDT Switch
−6 to +6
0.15
+34
−45 to +85
−55 to +150
µPG158TB
L-Band SPDT Switch
−6 to +6
0.15
+28
−45 to +85
−55 to +150
µPG2006TB
L-Band 1.8 V SPDT Switch
−6 to +6
0.15
+23
−45 to +85
−55 to +150
µPG2008TK
L-Band Small SPDT Switch
−6 to +6
0.15
+28
−45 to +85
−55 to +150
µPG2009TB
L-Band High Power SPDT Switch
−6 to +6
0.15
+36
−45 to +85
−55 to +150
µPG2010TB
L-Band High Power Single Control SPDT Switch
+6
0.15
+36
−45 to +85
−55 to +150
µPG2012TB
L-Band Single Control Switch
+6
0.15
+28
−45 to +85
−55 to +150
µPG2012TK
L-Band Single Control Switch
+6
0.15
+28
−45 to +85
−55 to +150
Note @ f = 2 GHz, CX = 2 pF
16
Selection Guide PG10195EJ01V0PF
Electrical Characteristics (TA = +25°C)
ICC (mA)
Pout1
MIN.
MAX.
f
(GHz)
110
130
2.4 to 2.5
Pout2
GP
(dB)
MIN.
MAX.
MIN.
23
+21
+24.5
−
MAX.
GCR
(dB)
PAE
(%)
+1
23
50
Package
Part Number
10TSON
µPG2301TQ
Electrical Characteristics (TA = +25°C)
ISL (dB)
Package
RLout (dB)
Part Number
Condition
MIN.
TYP.
MIN.
TYP.
30
33
13
16
@ Vcont = +5V/0V
16HTSSOP
µPG181GR
24
26.5
10
14
@ Vcont = +5V/0V
16HTSSOP
µPG183GR
45
48
10
15
@ Vcont = +5V/0V
10TSON
µPG186TQ
42
44
10
15
@ Vcont = +5V/0V
16HTSSOP
µPG187GR
29
32
10
15
@ Vcont = +5V/0V
16HTSSOP
µPG188GR
Electrical Characteristics (TA = +25°C)
Condition
Lins (dB)
RLin (dB)
Pin(1dB) (dBm) tSW (ns)
ISL (dB)
Package
Part Number
Condition
f (GHz)
TYP. MAX. MIN.
TYP.
TYP.
TYP.
MIN.
TYP.
0.1 to 2.5
0.60
1.0
11
−
@ 2 GHz, Vcont = +3 V/0 V
+30
30
20
22
6MM
µPG152TA
0.1 to 2.5
0.70
0.9
11
15
@ 2 GHz, Vcont = +3 V/0 V
+33
30
10
13
6SMM
µPG153TB
6SMM
µPG154TB
18
Note
21
Note
0.1 to 2.5
0.65
0.9
11
15
@ 2 GHz, Vcont = +3 V/0 V
+30
30
0.1 to 2.5
0.75
1.0
11
15
@ 2 GHz, Vcont = +3 V/0 V
+34
30
13
16
6SMM
µPG155TB
0.1 to 2.5
0.40
0.65
13
19
@ 2 GHz, Vcont = +3 V/0 V
+26.5
50
22
27
6SMM
µPG158TB
0.5 to 2.5
0.30
0.55
10
21
@ 1 GHz, Vcont = +1.8 V/0 V
+20
50
25
24
6SMM
µPG2006TB
0.5 to 2.5
0.40
0.70
13
20
@ 1 GHz, Vcont = +2.8 V/0 V
+25
50
22
25
6L2MM
µPG2008TK
0.5 to 2.5
0.25
0.45
15
20
@ 1 GHz, Vcont = +2.8 V/0 V
+34 @ Pin(0.1 dB)
150
24
28
6SMM
µPG2009TB
0.5 to 2.5
0.25
0.45
15
20
@ 1 GHz, Vcont = +2.8 V/0 V
+33 @ Pin(0.1 dB) 1 (µs)
24
28
6SMM
µPG2010TB
0.5 to 2.5
0.27
0.45
15
20
@ 1 GHz, Vcont = +2.8 V/0 V
+24
300
24
28
6SMM
µPG2012TB
0.5 to 2.5
0.27
0.45
15
20
@ 1 GHz, Vcont = +2.8 V/0 V
+24
300
24
30
6L2MM
µPG2012TK
Selection Guide PG10195EJ01V0PF
17
Multi-Chip Module for CATV
Part Number
Function
Wideband Amplifier for 50 M to
860 MHz CATV
Push-Pull Amp.
MC-78xx series
Wideband Amplifier for 50 M to
860 MHz CATV
Power Doubler Amp.
18
Remark
To need some information, contact your nearby
sales office.
Selection Guide PG10195EJ01V0PF
Package
7-pin special package
4.
APPLICATION NOTE
• X to Xu-Band DBS Converter
NE4210S01
RF IN
µ PC2712TB
µ PC3215TB
IF-Amp.
NE3210S01
NE4210S01
2SC5508
µ PG181GR
µ PC2709TB
IF-Amp.
IF OUT
2×2
IF SW
• S-Band MMDS (RX Block)
NE34018
NE38018
NE34018
NE38018
NE34018
NE38018
NE34018
NE38018
µ PC2749TB
2SC5185
NE34018
NE38018
NE34018
NE38018
• GPS Antenna
• Satellite Radio
NE38018
Selection Guide PG10195EJ01V0PF
19
5.
PACKAGE DIMENSIONS
FET (UNIT: mm)
18 (4-pin super minimold)
39 (4-pin minimold)
83A, 83B
1.88±0.3
2
4
3
0.4
+0.1
–0.05
1
4
4.0 MIN.
(1.9)
4.0 MIN.
0.5±0.1
0.4+0.1
–0.05
3
0.95
0.6+0.1
–0.06
5˚
0.1+0.07
–0.03
0 to 0.1
0 to 0.1
1.45 MAX.
0.16+0.1
–0.06
1.0±0.1
0.8
1.1+0.2
–0.1
4.0 MIN.
0.85
(1.8)
2.9±0.2
0.65
1.30
0.65
0.15+0.1
–0.05
4
0.3+0.1
–0.05
1
0.4+0.1
–0.05
0.3
0.9±0.1
5˚
5˚
84, 84A, 84C
4.0 MIN.
1
2
0.3+0.1
–0.05
2
0.4+0.1
–0.05
1.5+0.2
–0.1
3
1.25±0.1
0.65
1.25
2.8+0.2
–0.3
0.60
2.0±0.2
0.3+0.1
–0.05
1.88±0.3
2.1±0.2
5˚
S01
M01 (6-pin super minimold)
2.0±0.2
1.78±0.2
2.1±0.1
2.
1
2
0.
0±
1
0.2+0.1
–0.05
0.65
0.65
1.3
4
2.0±0.2
2
2.0±0.2
4
0.5 TYP.
2
0.5 TYP.
L
3
3
0.5 TYP.
0 to 0.1
1.5 MAX.
0.7
0.9±0.1
1.9±0.2
1.6
0.125±0.05
1.7 MAX.
L
0.1
0.1 MIN.
0.65 TYP.
(−SL) 1.7MIN.
L
0.15+0.1
–0.05
1.78±0.2
1.25±0.1
4.0±0.2
(−T1) 1.0±0.2
Power FET 1/2 (UNIT: mm)
SOURCE
2.5±0.3 DIA
SOURCE
GATE
2.5
6.35±0.4
SOURCE
3.0 MIN.
DRAIN
18.5 MAX.
0.2 MAX.
Selection Guide PG10195EJ01V0PF
4.5 MAX.
7.2±0.2
1.0
8.9±0.4
1.0
0.1+0.06
–0.02
2.26±0.4
1.13
0.9 MAX.
2.3
DRAIN
14.0±0.3
4.0 MIN. BOTH
LEADS
0.1
R1.25, 2 PLACES
9.8 MAX.
2.1±0.15
2.7
7.0
GATE
5.9±0.2
2.7
2.3
1.0±0.1
DRAIN
20
0.7±0.1
17.5±0.5
14.3
0.5
0.2 MAX.
GATE
95
3.8 MAX.
φ 1.8
77
4.0 MIN.
75
Power FET 2/2 (UNIT: mm)
T-65
R1.2 4PLACES
17.0
5.2±0.3
21.0±0.3
11.0±0.3
15.0±0.3
20.4±0.2
24.0±0.3
10.7
T-78
T-86
5.0 MAX.
16.0
1.6
2.4±0.2
12.0
0.2 MAX.
0.1+0.1
–0.05
5.0 MAX.
16.0
0.2 MAX.
1.6
0.1+0.05
–0.01
1.2
6.0±0.2
2.6±0.15
5.0 MAX.
0.1
1.7±0.15
0.2 MAX.
DRAIN
2.5 MIN.
DRAIN
SOURCE
0.6±0.1
8.0±0.1
6.45±0.05
3.2
4.0
4.3±0.2
GATE
1.6R±0.1
2 PLACES
DRAIN
0.5±0.1
SOURCE
C1.0 4PLACES
5.6 2.4
φ 2.2±0.3
2 PLACES
GATE
GATE SIDE
INDICATOR
GATE
12.9
4.0 MIN. BOTH LEADS
SOURCE
0.5±0.1
1.5 CHAMFER
4 PLACES
2.5 MIN.
1.0±0.1
17.4±0.2
T-61
2.5 MIN.
96/99
T-92
35.2±0.3
G2
45˚
9.7±0.3
S
D1
R 0.65
2.4±0.3
S
19.4±0.4
2.74±0.1
9.7±0.13
Source
11.4±0.3
5.7±0.3
45˚
S
D1
4.0±0.3
31.6±0.3
1.8±0.2
2.4±0.2
4.7 MAX.
0.1
D2
1.8±0.2
9±0.3
24.5±0.3
0.2 MAX.
1.8±0.1
3.0±0.2
2.4±0.2
16.5±0.13
S
R1.2±0.3
7.8±0.2
14.5±0.3
20.9±0.3
13±0.1
G2
D2
1.4±0.2
Drain
G1
T-92M
17.4±0.3
G1
8.0
R1.2±0.3
4.75 MAX.
2.4±0.3
8.25±0.15
Gate
79A
(Bottom View)
35.2±0.25
23.9±0.3
Source
D2
1.4±0.3
2.1±0.3
2.4±0.2
30.4±0.25
0.4±0.15
Drain
1.2 MAX.
1.0 MAX.
Gate
0.8 MAX.
5.7 MAX.
Selection Guide PG10195EJ01V0PF
4.4 MAX.
0.8±0.15
0.6±0.15
5.7 MAX.
Drain
3.6±0.2
0.2±0.1
D1
4.0±0.3
8.0±0.2
S
17.4±0.15
S
Gate
0.9±0.2
4–R1.3
1.5±0.2
Source
G2
0.6±0.3
2.6±0.3
G1
6.0 MAX.
45˚
4–C1.5
9.7±0.2
4.2 MAX.
21
MMIC (UNIT: mm)
4 Ceramic
8 Ceramic (T-31)
1.27±0.1 1.27±0.1
4–0.6
4–0.4
3
1.3±0.1
2
1.1±0.1
1
(0.48) (0.48)
5
(0.96)
2
1.5±0.1
4
10.6 MAX.
4.6 MAX.
4
0.16+0.1
–0.05
4.1 MIN.
4.1 MIN.
1
0.4±0.06
6L2MM
(6-pin lead-less minimold (1511 PKG) for GaAs MMIC)
3
6
0.6±0.06
7
8
3.8±0.2
0.2+0.05
–0.02
0.2+0.1
–0.05
0.65
0.65
1.3
3˚+7˚
–3˚
4
2.9±0.1
0 to 0.1
0.15+0.1
–0.05
0.7
0.9±0.1
0.9±0.2
(2.5)
(0.5)
(1.8)
(0.4)
0.20±0.10
(2.7)
5.5±0.3
0.65±0.1
(0.3)
2.40±0.15
0.1±0.1
8
0.20±0.10
(0.95)
(1.95)
9
1
(0.1)
(0.35)
(0.125)
5.2±0.2
0.87±0.2
0.575 MAX.
0.65
(Bottom View)
(1.70)
3.2±0.1
0.3+0.10
–0.05
16HTSSOP (16-pin plastic HTSSOP)
16
2.20±0.1
4.94±0.2
1.8 MAX.
1.5±0.1
0.13±0.1
0 to 0.1
1.1+0.2
–0.1
0.8
0.18±0.05
2.25±0.1
2.55±0.15
detail of lead end
1
6.4±0.3
(0.6 MAX.)
5
8
0.1 MIN.
10TSON (10-pin plastic TSON)
0.40±0.05
8SSOP (8-pin plastic SSOP (4.45 mm (175)))
3
4
0.95
2.0±0.2
0.3+0.1
–0.05
1
2
1.25±0.1
6
2.1±0.1
1.5+0.2
–0.1
5
0.95
2.8+0.2
–0.3
0.2 MIN.
(1.5)
22
0.55±0.05
1.7 MAX.
0.1±0.06
0.7+0.2
–0.1
6SMM (M01) (6-pin super minimold)
1.9
2.9±0.2
6MM (6-pin minimold)
0.11+0.1
–0.05
10.6 MAX.
1.48 MAX.
4.5 MAX.
Selection Guide PG10195EJ01V0PF
0.5±0.2
0.10 M
0.15+0.10
–0.05
0.15
6.
INDEX
Part Number
Page
Part Number
Page
Part Number
Page
3SK299
11
NE71383B
7
µPG186TQ
16
NE321000
9
NE72218
11
µPG187GR
16
NE3210S01
7
NE722S01
11
µPG188GR
16
NE32500
9
NE850R599A
13
µPG2006TB
16
NE34018
7
NE8500199
13
µPG2008TK
16
NE38018
7
NE8500295-4
13
µPG2009TB
16
NE4210S01
7
NE8500295-6
13
µPG2010TB
16
NE429M01
7
NE8500295-8
13
µPG2012TB
16
NE52418
9
NE960R275
13
µPG2012TK
16
NE6500179A
13
NE960R575
13
µPG2106TB
14
NE6500379A
13
NES1823M-240
13
µPG2110TB
14
NE6500496
13
MC-78xx Series
18
µPG2115TB
14
NE6501077
13
µPG152TA
16
µPG2126TB
14
NE650R279A
13
µPG153TB
16
µPG2128TB
14
NE650R479A
13
µPG154TB
16
µPG2130TB
14
NE6510179A
13
µPG155TB
16
µPG2301TQ
16
NE6510379A
13
µPG158TB
16
µPG2304TK
14
NE651R479A
13
µPG181GR
16
NE71300
9
µPG183GR
16
Selection Guide PG10195EJ01V0PF
23
7.
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Document No.
Note
C10983E
Note
SEMICONDUCTOR SELECTION GUIDE −Products and Packages−
C11531E
Note
X13769E
Note Published by NEC Corporation
8.
WEB SITE INFORMATION
The RF and Microwave homepage has many documents avaiable for viewing or download. Please see our web site. The
our web site address is as follows;
RF and Microwave Devices Homepage: http://www.csd-nec.com/microwave/index.html
Homepage-related inquiries
E-mail: [email protected]
24
Selection Guide PG10195EJ01V0PF
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
FAX: +852-3107-7309
TEL: +852-3107-7303
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
FAX: +82-2-528-0302
TEL: +82-2-528-0301
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0209
Document No. PG10195EJ01V0PF (1st edition)
(Previous No. P10747EJGV0SG00)
Date Published September 2002 CP(K)
 NEC Corporation 1996
 NEC Compound Semiconductor Devices 2002
Printed in Japan