GaAs DEVICES SELECTION GUIDE 2002/2003 SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of September 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 2 Selection Guide PG10195EJ01V0PF TABLE OF CONTENTS 1. SERIES OF GaAs DEVICE PRODUCTS...................................................................................... 4 2. MAP OF THE RF PERFORMANCE.............................................................................................. 5 HJ-FET ........................................................................................................................................... 5 Power GaAs FET............................................................................................................................ 6 3. ELECTRICAL CHARACTERISTICS TABLE.................................................................................. 7 HJ-FET (Hetero Junction FET)....................................................................................................... 7 GaAs MES FET .............................................................................................................................. 7 GaAs HBT (Hetero Junction Bipolar Transistor)............................................................................. 9 HJ-FET (Hetero Junction FET) Chip .............................................................................................. 9 GaAs MES FET Chip...................................................................................................................... 9 GaAs MES FET ............................................................................................................................. 11 UHF Dual Gate GaAs MES FET.................................................................................................... 11 L, S-Band Internally Matched Power GaAs FET Series ................................................................ 13 L to C-Band Driver Power GaAs FET ............................................................................................ 13 Ku-Band Power GaAs FET............................................................................................................ 13 GaAs Analog MMIC (Wideband Amplifier) .................................................................................... 14 GaAs Analog MMIC (AGC Amplifier)............................................................................................. 14 GaAs Analog MMIC (Dual Amplifier) ............................................................................................. 14 GaAs Analog MMIC (Power Amplifier) .......................................................................................... 16 DBS IF Switch................................................................................................................................ 16 GaAs Switch MMIC........................................................................................................................ 16 Multi-Chip Module for CATV .......................................................................................................... 18 4. APPLICATION NOTE...................................................................................................................... 19 5. PACKAGE DIMENSIONS ............................................................................................................... 20 FET ................................................................................................................................................ 20 Power FET..................................................................................................................................... 20 MMIC ............................................................................................................................................. 22 6. INDEX ............................................................................................................................................... 23 7. REFERENCE.................................................................................................................................... 24 8. WEB SITE INFORMATION ............................................................................................................. 24 Selection Guide PG10195EJ01V0PF 3 1. SERIES OF GaAs DEVICE PRODUCTS HJ-FET (Hetero Junction FET) MES FET Discrete FET Dual Gate MES FET Power FET Amplifier GaAs DEVICES AGC Amplifier MMIC Prescaler Switch Power Amplifier Multi-Chip Module 4 Selection Guide PG10195EJ01V0PF CATV MAP OF THE RF PERFORMANCE HJ-FET ASSOCIATED GAIN vs. NOISE FIGURE NE3210S01 f = 12 GHz NE4210S01 Associated Gain Ga (dB) 13 12 11 NE429M01 10 0.3 0.4 0.5 0.7 0.6 0.8 0.9 Noise Figure NF (dB) ASSOCIATED GAIN vs. NOISE FIGURE 18 17 NE52418 (GaAs HBT) Associated Gain Ga (dB) 2. NE34018 16 2SC5761 (SiGe) 2SC5508 (Si-BJT) 15 NE38018 14 13 : f = 2 GHz, VDS = 2 V, ID = 5 mA : f = 2 GHz, VDS = 2 V, ID = 3 mA 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Noise Figure NF (dB) Selection Guide PG10195EJ01V0PF 5 Power GaAs FET OUTPUT POWER, GAIN 1 dB COMPRESSION OUTPUT POWER vs. FREQUENCY Output Power Pout (dBm), Gain 1 dB Compression Output Power PO(1 dB) (dBm) 53.0 NES1823M-240 NES1823M-150 (Under Development) 51.0 49.0 47.0 NES1823M-45 (Under Development) 45.0 43.0 41.0 NE6501077 39.0 37.0 35.0 NE6500496 NE6500379A NE6510379A 33.0 NE85002 series 31.0 NE6500179A NE6510179A NE85001 series 29.0 NE960R575 27.0 NE850R5 series NE960R275 25.0 NE650R479A NE651R479A 23.0 NE650R279A 21.0 19.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency f (GHz) 6 Selection Guide PG10195EJ01V0PF 14.0 16.0 18.0 20.0 3. ELECTRICAL CHRACTERISTICS TABLE HJ-FET (Hetero Junction FET) Absolute Maximum Ratings (TA = +25°C) PackPart Number age VDS Code (V) Note1 Electrical Characteristics (TA = +25°C) IDSS VGS ID Ptot Tch (V) (mA) (mW) (°C) Tstg (°C) VDS (V) VP (mA) gm (V) (mS) VDS ID VDS ID MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP. S01 4.0 −3.0 IDSS 165 125 −65 to +125 2 15 40 70 2 0.1 −0.2 −2.0 2 10 40 55 NE4210S01 S01 4.0 −3.0 IDSS 165 125 −65 to +125 2 15 40 70 2 0.1 −0.2 −2.0 2 10 40 55 NE429M01 M01 4.0 −3.0 IDSS 165 125 −65 to +125 2 20 60 90 2 0.1 −0.2 −2.0 2 10 45 60 NE34018 18 4.0 −3.0 IDSS 150 125 −65 to +125 2 30 − 120 2 0.1 −0.2 −2.0 2 5 30 − NE38018 18 4.0 −3.0 IDSS 150 125 −65 to +125 2 40 − 170 2 0.1 −0.1 −1.5 2 5 50 − NE3210S01 Notes 1. -T1: 1000 pcs/reel, -T1B: 4000 pcs/reel (Tape & reel) 2. IDSS rank is specified as follows (V63: 30 to 65 mA, V64: 60 to 120 mA) 3. IDSS rank is specified as follows (V67: 40 to 90 mA, V68: 70 to 170 mA) GaAs MES FET Absolute Maximum Ratings (TA = +25°C) PackPart Number age VDS Code (V) NE71383B 83B Electrical Characteristics (TA = +25°C) IDSS VGS ID Rth(c-c) Ptot Tch (V) (mA) (°C/W) (mW) (°C) 5.0 −5.0 IDSS − Tstg (°C) 270 175 −65 to +175 VP gm (mA) (V) (mS) VDS VDS ID VDS ID (V) MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP. 3 20 40 Selection Guide PG10195EJ01V0PF 120 3 0.1 −0.5 −3.5 3 10 20 50 7 Electrical Characteristics (TA = +25°C) MSG./MAG. VDS (V) IDS (mA) f (GHz) 2 10 2 NFopt (dB) Ga (dB) TYP. VDS (V) IDS (mA) f (GHz) TYP. 12 15 2 10 12 10 12 15 2 10 2 10 12 11 2 2 5 2 18 2 5 2 16 Marking (dB) Part Number MAX. VDS (V) IDS (mA) f (GHz) MIN. TYP. 0.35 0.45 2 10 12 12.0 13.5 K NE3210S01 12 0.50 0.70 2 10 12 11.0 13.0 L NE4210S01 10 12 0.9 1.2 2 10 12 9.0 10.0 V72 NE429M01 2 5 2 0.6 1.0 2 5 2 14 16 Note 2 NE34018 2 5 2 0.55 1.0 2 5 2 12.5 14.5 Note 3 NE38018 Note1 Electrical Characteristics (TA = +25°C) MSG./MAG. 8 VDS (V) IDS (mA) f (GHz) − − − NFopt (dB) Ga (dB) TYP. VDS (V) IDS (mA) f (GHz) TYP. − 3 10 12 1.6 Marking (dB) MAX. VDS (V) IDS (mA) f (GHz) MIN. TYP. 1.8 3 10 12 8.5 9.5 Selection Guide PG10195EJ01V0PF − Part Number NE71383B GaAs HBT (Hetero Junction Bipolar Transistor) Absolute Maximum Ratings (TA = +25°C) Pack Part -age VCEO VCBO VEBO IC IB Ptot Tj Number Code (V) (V) (V) (mA) (mA) (mW) (°C) NE52418 18 5.0 3.0 3.0 40 0.3 150 125 Electrical Characteristics (TA = +25°C) hFE Tstg (°C) −65 to 125 ICBO IEBO (µA) (µA) VCE IC VCBO VEBO (V) (mA) MIN. TYP. MAX. (V) MIN. TYP. MAX. (V) MIN. TYP. MAX. 2 3 110 150 190 − 3 0.2 1.0 − 3 0.2 1.0 HJ-FET (Hetero Junction FET) Chip Absolute Maximum Ratings (TA = +25°C) Part Number Electrical Characteristics (TA = +25°C) IDSS VDS (V) VGS (V) ID (mA) Ptot (mW) Tch (°C) Tstg (°C) VP (mA) VDS (V) MIN. TYP. (V) MAX. VDS (V) ID (mA) MIN. MAX. NE321000 4 −3 IDSS 200 175 −65 to +175 2 15 40 70 2 0.1 −0.2 −2.0 NE32500 4 −3 IDSS 200 175 −65 to +175 2 20 60 90 2 0.1 −0.2 −2.0 GaAs MES FET Chip Absolute Maximum Ratings (TA = +25°C) Part Number NE71300 Electrical Characteristics (TA = +25°C) IDSS VDS (V) 5 VGS (V) −5 ID (mA) IDSS Ptot (mW) 400 Tch (°C) 175 Tstg (°C) −65 to +175 VP (mA) VDS (V) MIN. TYP. 3 20 40 Selection Guide PG10195EJ01V0PF (V) MAX. VDS (V) ID (mA) MIN. MAX. 120 3 0.1 −0.5 −3.5 9 Electrical Characteristics (TA = +25°C) IIP3 NF VCE (V) IC (mA) f (GHz) 2.5 8 2 (dB) Ga (dB) TYP. VCE (V) IC (mA) f (GHz) TYP. +8 2 3 2 0.95 Marking (dB) MAX. VCE (V) IC (mA) f (GHz) MIN. TYP. 1.35 2 3 2 15 17 V45 Part Number NE52418 Electrical Characteristics (TA = +25°C) gm NFopt (mS) VDS (V) ID (mA) MIN. 2 10 2 10 Ga (dB) TYP. VDS (V) ID (mA) f (GHz) TYP. 40 55 2 10 12 45 60 2 10 12 Part Number (dB) MAX. VDS (V) ID (mA) f (GHz) MIN. TYP. 0.35 0.45 2 10 12 12 13.5 NE321000 0.45 0.55 2 10 12 11 12.5 NE32500 Electrical Characteristics (TA = +25°C) gm 10 NFopt (mS) VDS (V) ID (mA) MIN. 3 10 20 Ga PO(1 dB) (dB) (dB) TYP. VDS (V) ID (mA) f (GHz) TYP. MAX. MIN. 50 3 10 12 1.6 1.8 8.5 Selection Guide PG10195EJ01V0PF TYP. VDS (V) ID (mA) f (GHz) 9.5 3 30 12 (dBm) Part Number TYP. 14.5 NE71300 GaAs MES FET Absolute Maximum Ratings (TA = +25°C) PackPart Number age VDS Code (V) VGS ID Ptot Tch (V) (mA) (mW) (°C) NE722S01 NE72218 Electrical Characteristics (TA = +25°C) IDSS Tstg (°C) VDS (V) VP (mA) gm (V) (mS) VDS ID VDS ID MIN. TYP. MAX. (V) (mA) MIN. MAX. (V) (mA) MIN. TYP. S01 5.0 −6.0 IDSS 250 125 −65 to +125 3 60 90 120 3 0.1 −0.5 −4.0 3 30 20 40 18 5.0 −6.0 IDSS 250 125 −65 to +125 3 30 60 120 3 0.1 −0.5 −4.0 3 30 20 45 Note IDSS rank is specified as follows (V57: 30 to 120 mA, V58: 65 to 120 mA, V59: 30 to 75 mA) UHF Dual Gate GaAs MES FET Absolute Maximum Ratings (TA = +25°C) Pack Part -age VDSX VG1S VG2S ID PT Tch Number Code (V) (V) (V) (mA) (mW) (°C) 3SK299 (NE25118) 18 13 −4.5 −4.5 40 120 125 Electrical Characteristics (TA = +25°C) BVDSX Tstg (°C) −55 to +125 IDSS VG1S(off) VG2S(off) IG1SS (V) VDS (mA) (V) (V) VDS VG1S VDS VG1S VG2S ID ID (V) (V) (µA) MIN. (V) MIN. MAX. (V) (mA) MAX. MAX. (V) (V) − − − − 5 5 40 5 0.1 −3.5 −3.5 0 −4 Note IDSS rank is specified as follows (U71: 5 to 15 mA, U72: 10 to 25 mA, U73: 20 to 35 mA, U74: 30 to 40 mA) Selection Guide PG10195EJ01V0PF 11 Electrical Characteristics (TA = +25°C) MSG./MAG. PN (10 kHz offset) VDS (V) IDS (mA) f (GHz) 3 10 − − (dB) TYP. VDS (V) IDS (mA) f (GHz) 12 7 3 30 − − 3 30 GS dBc/Hz Marking (dB) TYP. VDS (V) IDS (mA) f (GHz) MIN. TYP. 11 −90 3 30 12 − 6.0 P 11 −90 3 30 12 − 5.0 Note Part Number NE722S01 NE72218 Electrical Characteristics (T A = +25°C) IG1SS yfs IG2SS (µA) (µA) VG2S VDS (V) MAX. MAX. (V) 0 12 10 10 5 NF GPS Ciss Crss f (pF) (pF) (mS) (dB) (dB) VG2S ID f f VDS VG2S ID (MHz) (V) (mA) (kHz) MIN. TYP. TYP. (V) (V) (mA) (MHz) TYP. TYP. MIN. TYP. 1 10 1.0 18 1 1.0 0.02 5 1 10 Selection Guide PG10195EJ01V0PF 900 1.1 2.5 16 20 Marking Part Number Note 3SK299 (NE25118) L, S-Band Internally Matched Power GaAs FET Series VDS (V) IDSset (mA) f (GHz) Pout (dBm) GL (dB) IM3 (dBc) TYP. TYP. 12.0 3 000 2.17 53.5 Part Number NES1823M-240 Package TYP. Frequency Range (GHz) 12.0 − 1.8 to 2.3 T-92M Package L to C-Band Driver Power GaAs FET VDS (V) IDSset (mA) f (GHz) PO(1 dB) (dBm) GL (dB) ηadd (%) TYP. TYP. TYP. Frequency Range (GHz) 6.0 500 1.9 35.0 10.0 50 0.8 to 3.0 79A 10.0 ≤ 400 45 2.3 96 NE6501077 10.0 ≤ 1 000 2.3 10.5 40 2.3 77 NE650R279A 6.0 50 1.9 23.0 16.0 45 0.8 to 3.0 79A NE650R479A 6.0 100 1.9 26.0 14.0 45 0.8 to 3.0 79A 45 0.8 to 3.0 79A Part Number NE6500379A NE6500496 NE6500179A 6.0 NE6510179A 3.5 NE6510379A 3.5 200 200 200 2.3 1.9 1.9 1.9 36.0 Note1 39.5 Note1 30.0 32.5 10.0 58 0.8 to 3.0 79A 32.5 Note3 8.0 52 0.8 to 3.0 79A 12.0 60 0.8 to 3.0 79A − 2.0 to 10.0 99 NE651R479A 3.5 50 1.9 27.0 NE8500199 10.0 200 7.2 28.5 Note1 33.8 Note1 33.8 Note1 33.5 Note1 25.5 Note1 NE8500295-6 NE8500295-8 NE850R599A 10.0 10.0 10.0 10.0 450 450 450 100 4.2 6.5 8.5 7.2 12.0 Note4 Note3 Note3 NE8500295-4 11.5 Note2 9.0 Note2 − 3.5 to 5.5 95 9.5 Note2 − 5.5 to 7.5 95 8.0 Note2 − 7.5 to 8.5 95 9.5 Note2 − 2.0 to 10.0 99 Frequency Range (GHz) Package 10.5 Note2 Notes 1. PO (MIN.) (−4: Pin = 24.5 dBm, −6: Pin = 25.5 dBm, −8: Pin = 27.0 dBm) 2. GL (MIN.) 3. Pout 4. Pin = 0 dBm Ku-Band Power GaAs FET Part Number VDS (V) IDSset (mA) f (GHz) PO(1 dB) (dBm) GL (dB) ηadd (%) TYP. TYP. TYP. NE960R275 9.0 90 14.5 25.0 10.0 35 4 to 18 75 NE960R575 9.0 180 14.5 27.5 9.0 30 4 to 18 75 Selection Guide PG10195EJ01V0PF 13 GaAs Analog MMIC (Wideband Amplifier) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Condition Part Number µPG2115TB VDD1 (V) +6 VDD2 (V) − VAGC (V) − Pin (dBm) 0 Note PT (W) 0.14 Tstg (°C) −35 to +150 TA (°C) −30 to +90 IDD (mA) VDD1 (V) VDD2 (V) VAGC (V) f (GHz) TYP. MAX. +3 − − 0.89 to 0.96 12 16 Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C GaAs Analog MMIC (AGC Amplifier) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Condition Part Number VDD1 (V) VDD2 (V) VAGC (V) Note1 Pin PT (dBm) (W) Tstg (°C) TA (°C) IDD (mA) VDD1 (V) VDD2 (V) VAGC (V) f (GHz) TYP. MAX. µPG2106TB +6 +6 +6 −8 0.14 −35 to +150 −30 to +90 +3 +3 +2.5 0.89 to 0.96 25 35 µPG2110TB +6 +6 +6 −8 0.14 −35 to +150 −30 to +90 +3 +3 +2.5 1.429 to 1.453 25 35 µPG2128TB +6 +6 +6 −8 0.14 −35 to +150 −30 to +90 +3 +3.5 +2.5 1.429 to 1.453 40 48 µPG2130TB +6 +6 +6 −8 0.14 −35 to +150 −30 to +90 +3 +3.5 +2.5 1.429 to 1.453 25 35 Notes 1. Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C 2. ∆f = ±50 kHz, π/4DQPSK modulated signal input. 3. ∆f = ±100 kHz, π/4DQPSK modulated signal input. GaAs Analog MMIC (Dual Amplifier) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Condition Part Number VDD1 (V) VDD2 (V) VDD3 (V) Pin (dBm) Note PT (W) Tstg (°C) TA (°C) VDD1 (V) VDD2 (V) VDD3 (V) − 0.93 to 0.96 +3.6 1.429 to 1.453 µPG2126TB +6 − − +6 − +6 +4 −4 0.14 −35 to +150 −30 to 90 +3.6 − − +3.6 µPG2304TK +4 − − +10 0.125 −65 to +150 −30 to +85 +2.8 − − Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C 14 Selection Guide PG10195EJ01V0PF f (GHz) 0.68 to 0.77 1.27 to 1.37 IDD (mA) TYP. MAX. 16 28 20 32 3.5 4.0 Electrical Characteristics (TA = +25°C) IAGC GP GCR Padj1 Padj2 Pout (mA) (dB) (dB) (dBc) (dBc) (dBm) Package Part Number TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. TYP. − − 14 17 − − −60 −55 −70 −65 +8 6SMM µPG2115TB Pout (dBm) Package Part Number Electrical Characteristics (TA = +25°C) IAGC (mA) GP (dB) Note2 GCR (dB) Padj1 (dBc) Note3 Padj2 (dBc) TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. TYP. 0.2 0.5 26 30 35 40 −60 −55 −70 −65 +8 6SMM µPG2106TB 0.2 0.5 24 27 35 40 −60 −55 −70 −65 +8 6SMM µPG2110TB 0.2 0.5 26 28 35 40 −60 −55 −70 −65 +12 6SMM µPG2128TB 0.2 0.5 28 30 37 42 −60 −55 −70 −65 +10 6SMM µPG2130TB Electrical Characteristics (TA = +25°C) GP (dB) ISL (dB) Padj1 (dBc) Padj2 (dBc) Pout (dBm) Package Part Number TYP. MAX. MIN. TYP. TYP. MAX. TYP. MAX. TYP. 16 26 18 28 − − − − −60 −60 −55 −55 −70 −70 −65 −65 +8 +8 6SMM µPG2126TB 0 +2 30 35 − − − − − 6L2MM µPG2304TK Selection Guide PG10195EJ01V0PF 15 GaAs Analog MMIC (Power Amplifier) Electrical Characteristics (TA = +25°C) Absolute Maximum Ratings(TA = +25°C) Part Number µPG2301TQ Condition Application Bluetooth TM VCC1 (V) VCC2 (V) Vcont (V) Venable (V) 5 5 3.6 3.6 ICC Pin PD (mA) (dBm) (mW) 400 10 Tstg (°C) TA (°C) −55 to +150 −40 to +85 700 VCC1 (V) VCC2 (V) Vcont (V) Venable (V) 3.3 3.3 3.3 3.3 DBS IF Switch Absolute Maximum Ratings (TA = +25°C) Part Number Electrical Characteristics (T A = +25°C) Function LINS (dB) ∆LINS (dB) Vcont (V) PT (W) TA (°C) Tstg (°C) Condition f (GHz) TYP. MAX. TYP. MAX. µPG181GR DBS 2 × 2 IF Switch −6 to +6 2 −40 to +85 −65 to +150 0.95 to 2.15 5.0 7.0 0.8 1.5 µPG183GR DBS 4 × 2 IF Switch −1 to +6 2 −40 to +85 −65 to +150 0.95 to 2.15 7.0 9.0 1.5 3.0 µPG186TQ DBS SPDT IF Switch −1 to +6 2 −40 to +85 −65 to +150 0.95 to 2.15 1.5 2.5 0.4 1.0 µPG187GR DBS Twin SPDT IF Switch −1 to +6 2 −40 to +85 −65 to +150 0.95 to 2.15 1.8 3.0 0.4 1.2 µPG188GR DBS 4 × 2 IF Switch −1 to +6 2 −40 to +85 −65 to +150 0.95 to 2.15 7.0 9.0 1.5 3.0 GaAs Switch MMIC Absolute Maximum Ratings (TA = +25°C) Part Number Function Vcont (V) PT (W) Pin (dBm) TC (°C) Tstg (°C) µPG152TA L-Band SPDT Switch −6 to +6 0.4 +31 −50 to +80 −65 to +150 µPG153TB L-Band SPDT Switch −6 to +6 0.15 +33 −45 to +85 −55 to +150 µPG154TB L-Band SPDT Switch −6 to +6 0.15 +31 −45 to +85 −55 to +150 µPG155TB L-Band SPDT Switch −6 to +6 0.15 +34 −45 to +85 −55 to +150 µPG158TB L-Band SPDT Switch −6 to +6 0.15 +28 −45 to +85 −55 to +150 µPG2006TB L-Band 1.8 V SPDT Switch −6 to +6 0.15 +23 −45 to +85 −55 to +150 µPG2008TK L-Band Small SPDT Switch −6 to +6 0.15 +28 −45 to +85 −55 to +150 µPG2009TB L-Band High Power SPDT Switch −6 to +6 0.15 +36 −45 to +85 −55 to +150 µPG2010TB L-Band High Power Single Control SPDT Switch +6 0.15 +36 −45 to +85 −55 to +150 µPG2012TB L-Band Single Control Switch +6 0.15 +28 −45 to +85 −55 to +150 µPG2012TK L-Band Single Control Switch +6 0.15 +28 −45 to +85 −55 to +150 Note @ f = 2 GHz, CX = 2 pF 16 Selection Guide PG10195EJ01V0PF Electrical Characteristics (TA = +25°C) ICC (mA) Pout1 MIN. MAX. f (GHz) 110 130 2.4 to 2.5 Pout2 GP (dB) MIN. MAX. MIN. 23 +21 +24.5 − MAX. GCR (dB) PAE (%) +1 23 50 Package Part Number 10TSON µPG2301TQ Electrical Characteristics (TA = +25°C) ISL (dB) Package RLout (dB) Part Number Condition MIN. TYP. MIN. TYP. 30 33 13 16 @ Vcont = +5V/0V 16HTSSOP µPG181GR 24 26.5 10 14 @ Vcont = +5V/0V 16HTSSOP µPG183GR 45 48 10 15 @ Vcont = +5V/0V 10TSON µPG186TQ 42 44 10 15 @ Vcont = +5V/0V 16HTSSOP µPG187GR 29 32 10 15 @ Vcont = +5V/0V 16HTSSOP µPG188GR Electrical Characteristics (TA = +25°C) Condition Lins (dB) RLin (dB) Pin(1dB) (dBm) tSW (ns) ISL (dB) Package Part Number Condition f (GHz) TYP. MAX. MIN. TYP. TYP. TYP. MIN. TYP. 0.1 to 2.5 0.60 1.0 11 − @ 2 GHz, Vcont = +3 V/0 V +30 30 20 22 6MM µPG152TA 0.1 to 2.5 0.70 0.9 11 15 @ 2 GHz, Vcont = +3 V/0 V +33 30 10 13 6SMM µPG153TB 6SMM µPG154TB 18 Note 21 Note 0.1 to 2.5 0.65 0.9 11 15 @ 2 GHz, Vcont = +3 V/0 V +30 30 0.1 to 2.5 0.75 1.0 11 15 @ 2 GHz, Vcont = +3 V/0 V +34 30 13 16 6SMM µPG155TB 0.1 to 2.5 0.40 0.65 13 19 @ 2 GHz, Vcont = +3 V/0 V +26.5 50 22 27 6SMM µPG158TB 0.5 to 2.5 0.30 0.55 10 21 @ 1 GHz, Vcont = +1.8 V/0 V +20 50 25 24 6SMM µPG2006TB 0.5 to 2.5 0.40 0.70 13 20 @ 1 GHz, Vcont = +2.8 V/0 V +25 50 22 25 6L2MM µPG2008TK 0.5 to 2.5 0.25 0.45 15 20 @ 1 GHz, Vcont = +2.8 V/0 V +34 @ Pin(0.1 dB) 150 24 28 6SMM µPG2009TB 0.5 to 2.5 0.25 0.45 15 20 @ 1 GHz, Vcont = +2.8 V/0 V +33 @ Pin(0.1 dB) 1 (µs) 24 28 6SMM µPG2010TB 0.5 to 2.5 0.27 0.45 15 20 @ 1 GHz, Vcont = +2.8 V/0 V +24 300 24 28 6SMM µPG2012TB 0.5 to 2.5 0.27 0.45 15 20 @ 1 GHz, Vcont = +2.8 V/0 V +24 300 24 30 6L2MM µPG2012TK Selection Guide PG10195EJ01V0PF 17 Multi-Chip Module for CATV Part Number Function Wideband Amplifier for 50 M to 860 MHz CATV Push-Pull Amp. MC-78xx series Wideband Amplifier for 50 M to 860 MHz CATV Power Doubler Amp. 18 Remark To need some information, contact your nearby sales office. Selection Guide PG10195EJ01V0PF Package 7-pin special package 4. APPLICATION NOTE • X to Xu-Band DBS Converter NE4210S01 RF IN µ PC2712TB µ PC3215TB IF-Amp. NE3210S01 NE4210S01 2SC5508 µ PG181GR µ PC2709TB IF-Amp. IF OUT 2×2 IF SW • S-Band MMDS (RX Block) NE34018 NE38018 NE34018 NE38018 NE34018 NE38018 NE34018 NE38018 µ PC2749TB 2SC5185 NE34018 NE38018 NE34018 NE38018 • GPS Antenna • Satellite Radio NE38018 Selection Guide PG10195EJ01V0PF 19 5. PACKAGE DIMENSIONS FET (UNIT: mm) 18 (4-pin super minimold) 39 (4-pin minimold) 83A, 83B 1.88±0.3 2 4 3 0.4 +0.1 –0.05 1 4 4.0 MIN. (1.9) 4.0 MIN. 0.5±0.1 0.4+0.1 –0.05 3 0.95 0.6+0.1 –0.06 5˚ 0.1+0.07 –0.03 0 to 0.1 0 to 0.1 1.45 MAX. 0.16+0.1 –0.06 1.0±0.1 0.8 1.1+0.2 –0.1 4.0 MIN. 0.85 (1.8) 2.9±0.2 0.65 1.30 0.65 0.15+0.1 –0.05 4 0.3+0.1 –0.05 1 0.4+0.1 –0.05 0.3 0.9±0.1 5˚ 5˚ 84, 84A, 84C 4.0 MIN. 1 2 0.3+0.1 –0.05 2 0.4+0.1 –0.05 1.5+0.2 –0.1 3 1.25±0.1 0.65 1.25 2.8+0.2 –0.3 0.60 2.0±0.2 0.3+0.1 –0.05 1.88±0.3 2.1±0.2 5˚ S01 M01 (6-pin super minimold) 2.0±0.2 1.78±0.2 2.1±0.1 2. 1 2 0. 0± 1 0.2+0.1 –0.05 0.65 0.65 1.3 4 2.0±0.2 2 2.0±0.2 4 0.5 TYP. 2 0.5 TYP. L 3 3 0.5 TYP. 0 to 0.1 1.5 MAX. 0.7 0.9±0.1 1.9±0.2 1.6 0.125±0.05 1.7 MAX. L 0.1 0.1 MIN. 0.65 TYP. (−SL) 1.7MIN. L 0.15+0.1 –0.05 1.78±0.2 1.25±0.1 4.0±0.2 (−T1) 1.0±0.2 Power FET 1/2 (UNIT: mm) SOURCE 2.5±0.3 DIA SOURCE GATE 2.5 6.35±0.4 SOURCE 3.0 MIN. DRAIN 18.5 MAX. 0.2 MAX. Selection Guide PG10195EJ01V0PF 4.5 MAX. 7.2±0.2 1.0 8.9±0.4 1.0 0.1+0.06 –0.02 2.26±0.4 1.13 0.9 MAX. 2.3 DRAIN 14.0±0.3 4.0 MIN. BOTH LEADS 0.1 R1.25, 2 PLACES 9.8 MAX. 2.1±0.15 2.7 7.0 GATE 5.9±0.2 2.7 2.3 1.0±0.1 DRAIN 20 0.7±0.1 17.5±0.5 14.3 0.5 0.2 MAX. GATE 95 3.8 MAX. φ 1.8 77 4.0 MIN. 75 Power FET 2/2 (UNIT: mm) T-65 R1.2 4PLACES 17.0 5.2±0.3 21.0±0.3 11.0±0.3 15.0±0.3 20.4±0.2 24.0±0.3 10.7 T-78 T-86 5.0 MAX. 16.0 1.6 2.4±0.2 12.0 0.2 MAX. 0.1+0.1 –0.05 5.0 MAX. 16.0 0.2 MAX. 1.6 0.1+0.05 –0.01 1.2 6.0±0.2 2.6±0.15 5.0 MAX. 0.1 1.7±0.15 0.2 MAX. DRAIN 2.5 MIN. DRAIN SOURCE 0.6±0.1 8.0±0.1 6.45±0.05 3.2 4.0 4.3±0.2 GATE 1.6R±0.1 2 PLACES DRAIN 0.5±0.1 SOURCE C1.0 4PLACES 5.6 2.4 φ 2.2±0.3 2 PLACES GATE GATE SIDE INDICATOR GATE 12.9 4.0 MIN. BOTH LEADS SOURCE 0.5±0.1 1.5 CHAMFER 4 PLACES 2.5 MIN. 1.0±0.1 17.4±0.2 T-61 2.5 MIN. 96/99 T-92 35.2±0.3 G2 45˚ 9.7±0.3 S D1 R 0.65 2.4±0.3 S 19.4±0.4 2.74±0.1 9.7±0.13 Source 11.4±0.3 5.7±0.3 45˚ S D1 4.0±0.3 31.6±0.3 1.8±0.2 2.4±0.2 4.7 MAX. 0.1 D2 1.8±0.2 9±0.3 24.5±0.3 0.2 MAX. 1.8±0.1 3.0±0.2 2.4±0.2 16.5±0.13 S R1.2±0.3 7.8±0.2 14.5±0.3 20.9±0.3 13±0.1 G2 D2 1.4±0.2 Drain G1 T-92M 17.4±0.3 G1 8.0 R1.2±0.3 4.75 MAX. 2.4±0.3 8.25±0.15 Gate 79A (Bottom View) 35.2±0.25 23.9±0.3 Source D2 1.4±0.3 2.1±0.3 2.4±0.2 30.4±0.25 0.4±0.15 Drain 1.2 MAX. 1.0 MAX. Gate 0.8 MAX. 5.7 MAX. Selection Guide PG10195EJ01V0PF 4.4 MAX. 0.8±0.15 0.6±0.15 5.7 MAX. Drain 3.6±0.2 0.2±0.1 D1 4.0±0.3 8.0±0.2 S 17.4±0.15 S Gate 0.9±0.2 4–R1.3 1.5±0.2 Source G2 0.6±0.3 2.6±0.3 G1 6.0 MAX. 45˚ 4–C1.5 9.7±0.2 4.2 MAX. 21 MMIC (UNIT: mm) 4 Ceramic 8 Ceramic (T-31) 1.27±0.1 1.27±0.1 4–0.6 4–0.4 3 1.3±0.1 2 1.1±0.1 1 (0.48) (0.48) 5 (0.96) 2 1.5±0.1 4 10.6 MAX. 4.6 MAX. 4 0.16+0.1 –0.05 4.1 MIN. 4.1 MIN. 1 0.4±0.06 6L2MM (6-pin lead-less minimold (1511 PKG) for GaAs MMIC) 3 6 0.6±0.06 7 8 3.8±0.2 0.2+0.05 –0.02 0.2+0.1 –0.05 0.65 0.65 1.3 3˚+7˚ –3˚ 4 2.9±0.1 0 to 0.1 0.15+0.1 –0.05 0.7 0.9±0.1 0.9±0.2 (2.5) (0.5) (1.8) (0.4) 0.20±0.10 (2.7) 5.5±0.3 0.65±0.1 (0.3) 2.40±0.15 0.1±0.1 8 0.20±0.10 (0.95) (1.95) 9 1 (0.1) (0.35) (0.125) 5.2±0.2 0.87±0.2 0.575 MAX. 0.65 (Bottom View) (1.70) 3.2±0.1 0.3+0.10 –0.05 16HTSSOP (16-pin plastic HTSSOP) 16 2.20±0.1 4.94±0.2 1.8 MAX. 1.5±0.1 0.13±0.1 0 to 0.1 1.1+0.2 –0.1 0.8 0.18±0.05 2.25±0.1 2.55±0.15 detail of lead end 1 6.4±0.3 (0.6 MAX.) 5 8 0.1 MIN. 10TSON (10-pin plastic TSON) 0.40±0.05 8SSOP (8-pin plastic SSOP (4.45 mm (175))) 3 4 0.95 2.0±0.2 0.3+0.1 –0.05 1 2 1.25±0.1 6 2.1±0.1 1.5+0.2 –0.1 5 0.95 2.8+0.2 –0.3 0.2 MIN. (1.5) 22 0.55±0.05 1.7 MAX. 0.1±0.06 0.7+0.2 –0.1 6SMM (M01) (6-pin super minimold) 1.9 2.9±0.2 6MM (6-pin minimold) 0.11+0.1 –0.05 10.6 MAX. 1.48 MAX. 4.5 MAX. Selection Guide PG10195EJ01V0PF 0.5±0.2 0.10 M 0.15+0.10 –0.05 0.15 6. INDEX Part Number Page Part Number Page Part Number Page 3SK299 11 NE71383B 7 µPG186TQ 16 NE321000 9 NE72218 11 µPG187GR 16 NE3210S01 7 NE722S01 11 µPG188GR 16 NE32500 9 NE850R599A 13 µPG2006TB 16 NE34018 7 NE8500199 13 µPG2008TK 16 NE38018 7 NE8500295-4 13 µPG2009TB 16 NE4210S01 7 NE8500295-6 13 µPG2010TB 16 NE429M01 7 NE8500295-8 13 µPG2012TB 16 NE52418 9 NE960R275 13 µPG2012TK 16 NE6500179A 13 NE960R575 13 µPG2106TB 14 NE6500379A 13 NES1823M-240 13 µPG2110TB 14 NE6500496 13 MC-78xx Series 18 µPG2115TB 14 NE6501077 13 µPG152TA 16 µPG2126TB 14 NE650R279A 13 µPG153TB 16 µPG2128TB 14 NE650R479A 13 µPG154TB 16 µPG2130TB 14 NE6510179A 13 µPG155TB 16 µPG2301TQ 16 NE6510379A 13 µPG158TB 16 µPG2304TK 14 NE651R479A 13 µPG181GR 16 NE71300 9 µPG183GR 16 Selection Guide PG10195EJ01V0PF 23 7. REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Document No. Note C10983E Note SEMICONDUCTOR SELECTION GUIDE −Products and Packages− C11531E Note X13769E Note Published by NEC Corporation 8. WEB SITE INFORMATION The RF and Microwave homepage has many documents avaiable for viewing or download. Please see our web site. The our web site address is as follows; RF and Microwave Devices Homepage: http://www.csd-nec.com/microwave/index.html Homepage-related inquiries E-mail: [email protected] 24 Selection Guide PG10195EJ01V0PF Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0209 Document No. PG10195EJ01V0PF (1st edition) (Previous No. P10747EJGV0SG00) Date Published September 2002 CP(K) NEC Corporation 1996 NEC Compound Semiconductor Devices 2002 Printed in Japan