NEC UPG2012TK

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2012TK
L-BAND SPDT SWITCH
DESCRIPTION
The µPG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
mobile phone and another L-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin lead-less minimold package (1511). And this package is able to high-density
surface mounting.
FEATURES
• Supply voltage
: VDD = 2.7 to 3.0 V (2.8 V TYP.)
• Switch control voltage
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss
: LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
value)
• High isolation
: ISL1 = 30 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL2 = 30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
value)
• High-density surface mounting
: 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATIONS
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number
µPG2012TK-E2
Package
Marking
6-pin lead-less minimold
G3H
(1511)
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2012TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10219EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
Printed in Japan
The mark  shows major revised points.
 NEC Compound Semiconductor Devices, Ltd. 2002, 2004
µPG2012TK
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
2
3
G3H
1
(Top View)
(Bottom View)
6
1
6
6
1
5
2
5
5
2
4
3
4
4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont
5
INPUT
6
VDD
TRUTH TABLE
Vcont
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
OFF
ON
High
ON
OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VDD
+6.0
V
Switch Control Voltage
Vcont
+6.0
V
Pin
+26
dBm
Input Power
150
Note
Power Dissipation
PD
mW
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDD
2.7
2.8
3.0
V
Switch Control Voltage (H)
Vcont(H)
2.7
2.8
3.0
V
Switch Control Voltage (L)
Vcont(L)
−0.2
0
0.2
V
Supply Voltage
2
Data Sheet PG10219EJ02V0DS
µPG2012TK
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Insertion Loss1
LINS1
f = 0.5 to 1.0 GHz
−
0.27
0.50
dB
Insertion Loss2
LINS2
f = 2.0 GHz
−
0.30
0.50
dB
Isolation1
ISL1
f = 0.5 to 2.0 GHz
24
30
−
dB
Input Return Loss
RLin
f = 0.5 to 2.5 GHz
15
20
−
dB
Output Return Loss
RLout
f = 0.5 to 2.5 GHz
15
20
−
dB
+17.5
+20.5
−
dBm
0.1 dB Gain Compression
Input Power
Pin(0.1 dB)
f = 2.0 GHz
Note
Supply Current
IDD
−
50
100
µA
Switching Control Current
Icont
−
4
20
µA
Note Pin(0.1dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VDD = 2.8 V,Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Insertion Loss3
LINS3
f = 2.5 GHz
−
0.30
−
dB
Isolation2
ISL2
f = 2.5 GHz
−
30
−
dB
Pin(1 dB)
f = 2.0 GHz
−
+24.0
−
dBm
−
300
−
ns
1 dB Gain Compression
Input Power
Note
Switching Control Speed
tSW
Note Pin(1dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors
should be chosen to accommodate the frequency of operation, bandwidth, switching speed and
the condition with actual board of your system. The range of recommended DC cut capacitor
value is less than 100 pF.
Data Sheet PG10219EJ02V0DS
3
µPG2012TK
EVALUATION CIRCUIT (VDD = 2.8 V, Vcont = 2.8 V/0 V, DC cut capacitors = 56 pF)
VDD
INPUT
Vcont
56 pF
1 000 pF
1 000 pF
6
5
4
1
2
3
56 pF
OUTPUT1
56 pF
OUTPUT2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10219EJ02V0DS
µPG2012TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont
6pin L2MM SPDT SW
Vc1
OUTPUT2
C2
C
2
C
4
OUT 1
INPUT
G3H
C1
C3
C1
C1
IN
C
1
C
5
C2
OUT 2
OUTPUT1
Vc2
VDD
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
56 pF
1 000 pF
Data Sheet PG10219EJ02V0DS
5
µPG2012TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
(Bottom View)
0.16±0.05
0.48±0.05 0.48±0.05
1.5±0.1
(Top View)
1.1±0.1
0.2±0.1
6
0.11+0.1
–0.05
0.55±0.03
1.3±0.05
Data Sheet PG10219EJ02V0DS
0.9±0.1
µPG2012TK
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10219EJ02V0DS
7
µPG2012TK
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
8
Data Sheet PG10219EJ02V0DS
µPG2012TK
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
Hong Kong Head Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Taipei Branch Office
FAX: +82-2-558-5209
TEL: +82-2-558-2120
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406