DATA SHEET GaAs INTEGRATED CIRCUIT µPG2115TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2115TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Operation frequency : fopt = 893 to 960 MHz • Supply voltage : VDD = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : IDD = 12 mA TYP. @ VDD = 3.0 V, Pout = +8 dBm • Power gain : GP = 17 dB TYP. @ VDD = 3.0 V, Pout = +8 dBm • Low distortion : Padj1 = −60 dBc TYP. @ VDD = 3.0 V, Pout = +8 dBm, f = 926 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth • Input port matching circuit built-in : HPF-Type matching circuit • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Digital Cellular: PDC 800 MHz etc. ORDERING INFORMATION Part Number µPG2115TB-E3 Package 6-pin super minimold Marking G2C Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2115TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10169EJ01V0DS (1st edition) (Previous No. P15079EJ1V0DS00) Date Published July 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Corporation 2000 NEC Compound Semiconductor Devices 2002 µPG2115TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) G2C 3 2 1 (Top View) 4 3 4 4 3 5 2 5 5 2 matching circuit 6 1 Pin No. Pin Name 1 N.C. 2 GND 3 OUTPUT/VDD 4 N.C. 5 GND 6 INPUT (Bottom View) 6 6 1 ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD 6.0 V Input Power Pin 0 dBm 140 Note Power Dissipation PD mW Operating Ambient Temperature TA −30 to +90 °C Storage Temperature Tstg −35 to +150 °C Note Mounted on double copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (TA = +25°°C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VDD 2.7 3.0 3.3 V Input Power Pin − −9 −6 dBm ELECTRICAL CHARACTERISTICS (TA = +25°°C, VDD = 3.0 V, π/4DQPSK modulated signal input, with external output matching, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 893 − 960 MHz Operating Frequency fopt Circuit Current IDD Pout = +8 dBm − 12 16 mA Power Gain GP Pin = +8 dBm 14 17 20 dB Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, ∆f = ±50 kHz, 21 kHz Bandwidth − −60 −55 dBc Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, ∆f = ±100 kHz, 21 kHz Bandwidth − −70 −65 dBc 2 Data Sheet PG10169EJ01V0DS µPG2115TB EVALUATION CIRCUIT f = 925 MHz, VDD = 3.0 V OUTPUT 1.8 pF 10 nH VDD 3 4 2 5 1 000 pF matching circuit 1 6 INPUT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PG10169EJ01V0DS 3 µPG2115TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD VDD Vdd1 Vdd2 OUT C 2 C1 L1 OUT IN Vagc IN NEC AGC AMP USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker C1 1 000 pF GRM39CH102K50 muRata C2 1.8 pF GRM39CK1R8C50 muRata L1 10 nH TFL0816-10N Susumu 4 Data Sheet PG10169EJ01V0DS µPG2115TB OUTPUT POWER, CIRCUIT CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER 30 0 VDD = 3 V, f = 926 MHz 25 Padj1: ∆ f = ±50 kHz Padj2: ∆ f = ±100 kHz 20 π/4DQPSK signal input 15 –10 –20 –30 IDD 10 –40 Pout 5 –50 Padj1 0 –60 Padj2 –5 –10 –25 –70 –20 –15 –10 –5 Input Power Pin (dBm) 0 5 –80 Adjacent Channel Power Leakage Padj1, Padj2 (dBc) Output Power Pout (dBm), Circuit Current IDD (mA) TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) Remark The graph indicate nominal characteristics. Data Sheet PG10169EJ01V0DS 5 µPG2115TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 6 Data Sheet PG10169EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2115TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10169EJ01V0DS 7 µPG2115TB • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 8 Data Sheet PG10169EJ01V0DS µPG2115TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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